scholarly journals The influence of boron doping in the growth of ultra/nanocrystalline diamond films

2012 ◽  
Vol 1395 ◽  
Author(s):  
Fernando A. Souza ◽  
Adriana F. Azevedo ◽  
Maurício R. Baldan ◽  
Neidenêi G. Ferreira
Keyword(s):  
Grain Size ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Columnar Structure ◽  
Nanocrystalline Diamond ◽  
Nanocrystalline Diamond Films ◽  
Average Grain Size ◽  
Diffraction Patterns ◽  
Boron Source ◽  
Boron Dopant

ABSTRACTBoron-doped nanocrystalline diamond (BDND) films were grown on silicon substrates by hot filament chemical vapor deposition in Ar/H2/CH4 gas mixtures. The boron source was obtained from an additional H2 line passing through a bubbler containing B2O3 dissolved in methanol with different B/C ratios. The transition from ultrananocrystalline to nanocrystalline diamond films is clearly shown by the addition of boron dopant to the growth gas mixture. The morphology and structure of these films have markedly different properties. The top view and the cross section of the films were characterized by scanning electron microscopy showing the transition from ultrananocrystalline growth (renucleation process) to a columnar structure of NCD films. Finally, the grain size was obtained from X-ray diffraction patterns of the films. The diamond average grain size increased from 10 to 35 nm for films with 2000 and 30,000 ppm B/C, respectively.

On the Nature of Grain Boundaries in Nanocrystalline Diamond

MRS Bulletin ◽  
1998 ◽  
Vol 23 (9) ◽  
pp. 36-41 ◽  
Author(s):  
P. Keblinski ◽  
D. Wolf ◽  
F. Cleri ◽  
S.R. Phillpot ◽  
H. Gleiter
Keyword(s):  
Grain Size ◽  
Grain Boundaries ◽  
Active Sites ◽  
Critical Role ◽  
Diamond Films ◽  
Structural Disorder ◽  
Nanocrystalline Diamond ◽  
High Wear Resistance ◽  
Atomic Structures ◽  
Nanocrystalline Diamond Films

The low-pressure synthesis of rather pure nanocrystalline diamond films from fullerene precursors suggests that for a small enough grain size the diamond structure may be energetically preferred over graphite. Because of the small grain size of typically about 15 nm in these films, a significant fraction of the carbon atoms is situated in the grain boundaries (GBs). The surprisingly high wear resistance of these films even after the substrate is removed and their high corrosion resistance suggest that the grains are strongly bonded. Grain-boundary carbon is also believed to be responsible for the absorption and scattering of light in these films, for their electrical conductivity, and for their electron-emission properties. In spite of all these indications of a critical role played by GB carbon in achieving the remarkable properties of nanocrystalline diamond films, to date the atomic structures of the GBs are essentially not known.It is well-known that the electronic and optical properties of polycrystalline silicon films are significantly affected by the presence of GBs. For example GBs can provide active sites for the recombination of electron-hole pairs in photovoltaic applications. Also, in electronic devices such as thin-film transistors, GBs are known to play an important role. Because of silicon's strong energetic preference for sp3 hybridization over other electronic configurations, the structural disorder in silicon GBs is accommodated by a distortion of the tetrahedral nearestneighbor bonds and in the extreme by the creation of dangling bonds—that is, of three-coordinated Si atoms each having one unsaturated, bound electron in an otherwise more or less tetrahedrally coordinated environment.

Study of Undoped Nanocrystalline Diamond Films Grown by Microwave Plasma-Assisted Chemical Vapor Deposition

2021 ◽  
Vol 55 (1) ◽  
pp. 66-75
Author(s):  
A. L. Vikharev ◽  
S. A. Bogdanov ◽  
N. M. Ovechkin ◽  
O. A. Ivanov ◽  
D. B. Radishev ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Nanocrystalline Diamond ◽  
Nanocrystalline Diamond Films

Investigation on Field Electron Emission from Carbon Nanotubes on Nanocrystalline Diamond Films

2005 ◽  
Vol 23 ◽  
pp. 35-38 ◽  
Author(s):  
K.J. Liao ◽  
W.L. Wang ◽  
C. Cai ◽  
J.W. Lu ◽  
C.G. Hu
Keyword(s):  
Carbon Nanotubes ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Nanocrystalline Diamond ◽  
Electron Field Emission ◽  
Si Substrates ◽  
Turn On ◽  
Nanocrystalline Diamond Films ◽  
Electron Field ◽  
Hot Filament

The electron field emission from carbon nanotubes on nanocrystalline diamond films was investigated. Carbon nanotubes and nano-diamond films were deposited on Si substrates by hot filament chemical vapor deposition. The experimental results showed that the carbon nanotubes on nanostructured films exhibited a lower value of the turn-on electric field than those of carbon nanotubes and nano-diamond. It was found that the turn-on field of nanotubes on nano-diamond was about 0.9V/μm, which was lower than those of carbon nanotubes and nano-diamond.

Effect of grain size and pores on the dielectric constant of nanocrystalline diamond films

2007 ◽  
Vol 90 (13) ◽  
pp. 133118 ◽  
Author(s):  
Z. L. Wang ◽  
J. J. Li ◽  
Z. H. Sun ◽  
Y. L. Li ◽  
Q. Luo ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Grain Size ◽  
Diamond Films ◽  
Nanocrystalline Diamond ◽  
Nanocrystalline Diamond Films

ENHANCED NUCLEATION AND SMOOTHNESS OF NANOCRYSTALLINE DIAMOND FILMS VIA W-C GRADIENT INTERLAYER

2009 ◽  
Vol 23 (06n07) ◽  
pp. 1676-1682 ◽  
Author(s):  
QIUPING WEI ◽  
ZHIMING YU ◽  
LI MA ◽  
DENGFENG YIN
Keyword(s):  
Diamond Films ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Nanocrystalline Diamond ◽  
Cemented Carbide ◽  
Nucleation Density ◽  
Wear Properties ◽  
Nanocrystalline Diamond Films ◽  
And Performance ◽  
Cvd Diamond Coating

CVD diamond coating was deposited on to 13%wt. Co -containing tungsten cemented carbide surfaces using a hot filament chemical vapor deposition (HFCVD) to improve wear properties and performance of WC -13% wt . Co . Prior to the deposition of the diamond films, a W - C gradient intermediate layer had been sputtered on WC -13% wt . Co . The surface and cross-section morphology, phase transformation, and grain size distribution of the samples were investigated by means of field emission scanning electron microscope (SEM), X-ray diffractometer (XRD), and atomic force microscope (AFM), respectively. The results show that W - C gradient intermediate layers can effectively reduce the diffusion of Co in cemented carbide substrates during diamond deposition process, resulting high nucleation density and ultra smooth nanocrystalline diamond films.

Thermal Stability of Nanocrystalline Diamond Films Grown by Microwave Plasma Chemical Vapor Deposition

2002 ◽  
Vol 750 ◽  
Author(s):  
Mevlut Bulut ◽  
Shane A. Catledge ◽  
Yogesh K. Vohra ◽  
Renato P. Camata
Keyword(s):  
Thermal Stability ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Nanocrystalline Diamond ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Nanocrystalline Diamond Films ◽  
Thermal Stability Of

ABSTRACTIn this work, the open-air thermal stability of nanocrystalline diamond films grown on mirror-polished titanium alloy substrates by the Microwave Plasma Chemical Vapor Deposition (MPCVD) technique was studied. The results of this investigation show that nanocrystalline diamond films are highly stable in air up to 600°C with no significant change in mechanical properties. Samples annealed between 600°C and 650°C, however, exhibit values of hardness lower by as much as 40% compared to as-grown samples. Above 650°C serious delamination effects were observed in the coatings.

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