Effects of Curing Time on Properties of Spin-On Glass as Low-Temperature Insulator

2012 ◽  
Vol 1436 ◽  
Author(s):  
Miguel A. Dominguez ◽  
Pedro Rosales ◽  
Alfonso Torres ◽  
Mario Moreno
Keyword(s):  
Surface Roughness ◽  
Refractive Index ◽  
Low Temperature ◽  
Electrical Characterization ◽  
Breakdown Field ◽  
Curing Time

ABSTRACTIn this work, we report the effects of curing time on properties of SiO2 films produced from Spin-On Glass (SOG) diluted with H2O and cured at 200°C. The electrical characterization showed that the insulator breakdown field for the films produced from SOG diluted with H2O with 1 Hr of curing time was approximately 5 MV/cm while for 6.5 Hrs of curing time the breakdown field was 21 MV/cm. Also, the refractive index and surface roughness were improved with longer curing time.

Spin-On Glass as low temperature gate insulator

2011 ◽  
Vol 1287 ◽  
Author(s):  
Miguel A. Domínguez ◽  
Pedro Rosales ◽  
Alfonso Torres ◽  
Joel Molina ◽  
Mario Moreno ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Dielectric Constant ◽  
Refractive Index ◽  
Low Temperature ◽  
Electrical Characterization ◽  
Gate Insulator ◽  
Flexible Substrates ◽  
Electrical Characteristics ◽  
Thermally Grown

ABSTRACTIn this work, we report the characterization of Spin-On Glass (SOG) as low temperature gate insulator. Our SOG film was deposited at temperature of 200°C, which is compatible to use on flexible substrates. The optical and electrical characterization showed that the refractive index and dielectric constant are very close to those of thermally grown SiO2. Also, analysis of surface roughness by AFM is presented. We demonstrated the use of SOG as gate insulator, fabricating and characterizing inverted staggered a-SiGe:H TFTs. The observed results are promising and suggest that SOG films deposited at 200°C in the Laboratory of Microelectronics of INAOE could be an alternative to improve electrical characteristics of TFTs on low temperature flexible substrates.

ELectrical Characterization of Beryllium Doped Low Temperature MBE Grown GaAs

1999 ◽  
Vol 570 ◽  
Author(s):  
M. J. Cich ◽  
R. Zhao ◽  
Y. Park ◽  
P. Specht ◽  
E. R. Weber
Keyword(s):  
Electrical Properties ◽  
Low Temperature ◽  
Barrier Height ◽  
Growth Temperature ◽  
Electrical Characterization ◽  
Breakdown Field ◽  
Current Rise ◽  
Beryllium Doping ◽  
Lt Gaas

ABSTRACTThe electrical properties of low temperature MBE grown GaAs (LT-GaAs) in the n-i-n configuration have been studied. The mechanism of current rise in beryllium doped LT-GaAs is found to fit Frenkel-Poole type emission with a barrier height of 0.26 eV. However, this model does not fit undoped LT-GaAs. The breakdown field is considerably higher (up to 5.2* 105 V/cm) for beryllium doped films than undoped films, and depends on both growth temperature and beryllium concentration. Beryllium doping is also found to increase the resistivity of the preannealed films to values > 109 ω-cm.

scholarly journals Effect of Curing Agents on Electrical Properties of Low-Temperature Curing Conductive Coatings and Thermodynamic Analysis

Coatings ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 656
Author(s):  
Junjie Shu ◽  
Yang Wang ◽  
Bei Guo ◽  
Weihua Qin ◽  
Lanxuan Liu ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Low Temperature ◽  
Surface Resistance ◽  
Advanced Manufacturing ◽  
Curing Time ◽  
Conductive Coatings ◽  
Exponential Factor ◽  
Design Expert ◽  
Surface Method ◽  
Curing Agents

Silver-based high-conductivity coatings are used in many advanced manufacturing equipment and components, and existing coatings require high-temperature curing. This paper studies the effects of different curing agents on the electrical properties of low-temperature curing (<100 °C) conductive coatings, and analyzes the effects of different curing temperatures and curing time on the surface resistance, square resistance and resistivity of conductive coatings. The response surface method in Design Expert was used to construct the model, and the curing thermodynamics of different curing agents were analyzed by DSC. It was found that curing agents with lower Tm and activation energy, higher pre-exponential factor and more flexible segments are beneficial to the preparation of highly conductive coatings.

Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material

1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Physical Characteristics ◽  
Hall Measurements ◽  
Undoped Material ◽  
Low Temperature Gaas

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

Characterization of Thermal Oxides of Laser Annealed Polysilicon

1981 ◽  
Vol 4 ◽  
Author(s):  
Rajiv R. Shah ◽  
Robert Mays ◽  
D. Lloyd Crosthwait
Keyword(s):  
Laser Processing ◽  
Single Crystal Silicon ◽  
Electrical Characterization ◽  
Device Fabrication ◽  
Breakdown Field ◽  
Guard Ring ◽  
Crystal Silicon ◽  
Process Sequence ◽  
Thermal Oxide

ABSTRACTWe report an investigation of the effects of laser processing on the thermal oxides of polysilicon. LPCVD polysilicon, 500 nm thick, deposited on 500 nm thermal oxide of single crystal silicon was laser processed at various stages in the process sequence for device fabrication. Effects of CW Ar+ and pulsed 1.06 and 0.53 μm laser processing were investigated. Laser annealed polysilicon was oxidized in a steam ambient. Using a second level of polysilicon, guard ring diode and capacitors were fabricated. Electrical characterization revealed an improvement in breakdown field strengths of these oxides without deleterious effects on any of the associated interfaces.

Ultra-precision grinding of 4H-SiC wafer by PAV/PF composite sol-gel diamond wheel

2021 ◽  
Vol 13 (9) ◽  
pp. 168781402110449
Author(s):  
Kaiping Feng ◽  
Tianchen Zhao ◽  
Binghai Lyu ◽  
Zhaozhong Zhou
Keyword(s):  
Surface Roughness ◽  
Low Temperature ◽  
Polyvinyl Alcohol ◽  
Feed Rate ◽  
Hot Pressing ◽  
Phenolic Resin ◽  
Sol Gel ◽  
Diamond Wheel ◽  
Sic Wafer ◽  
Better Than

To eliminate the deep scratches on the 4H-SiC wafer surface in the grinding process, a PVA/PF composite sol-gel diamond wheel was proposed. Diamond and fillers are sheared and dispersed in the polyvinyl alcohol-phenolic resin composite sol glue, repeatedly frozen at a low temperature of −20°C to gel, then 180°C sintering to obtain the diamond wheel. Study shows that the molecular chain of polyvinyl alcohol-phenolic resin is physically cross-linked to form gel under low-temperature conditions. Tested by mechanical property testing machines, microhardness tester, and SEM. The results show that micromorphology is more uniform, the strength of the sol-gel diamond wheel is higher, the hardness uniformity is better than that of the hot pressing diamond wheel. Grinding experiments of 4H-SiC wafer were carried out with the prepared sol-gel diamond wheel. The influence of grinding speed, feed rate, and grinding depth on the surface roughness was investigated. The results showed that by using the sol-gel diamond wheel, the surface quality of 4H-SiC wafer with an average surface roughness Ra 6.42 nm was obtained under grinding wheel speed 7000 r/min, grinding feed rate 6 µm/min, and grinding depth 15 µm, the surface quality was better than that of using hot pressing diamond wheel.

scholarly journals Analysis of Effects of Surface Roughness on Sensing Performance of Surface Plasmon Resonance Detection for Refractive Index Sensing Application

Sensors ◽  
2021 ◽  
Vol 21 (18) ◽  
pp. 6164
Author(s):  
Treesukon Treebupachatsakul ◽  
Siratchakrit Shinnakerdchoke ◽  
Suejit Pechprasarn
Keyword(s):  
Surface Roughness ◽  
Refractive Index ◽  
Surface Plasmon Resonance ◽  
Surface Plasmon ◽  
Plasmon Resonance ◽  
Figure Of Merit ◽  
Root Mean Square Roughness ◽  
Performance Parameters ◽  
Refractive Index Sensing ◽  
Sensing Performance

This paper provides a theoretical framework to analyze and quantify roughness effects on sensing performance parameters of surface plasmon resonance measurements. Rigorous coupled-wave analysis and the Monte Carlo method were applied to compute plasmonic reflectance spectra for different surface roughness profiles. The rough surfaces were generated using the low pass frequency filtering method. Different coating and surface treatments and their reported root-mean-square roughness in the literature were extracted and investigated in this study to calculate the refractive index sensing performance parameters, including sensitivity, full width at half maximum, plasmonic dip intensity, plasmonic dip position, and figure of merit. Here, we propose a figure-of-merit equation considering optical intensity contrast and signal-to-noise ratio. The proposed figure-of-merit equation could predict a similar refractive index sensing performance compared to experimental results reported in the literature. The surface roughness height strongly affected all the performance parameters, resulting in a degraded figure of merit for surface plasmon resonance measurement.

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