Influence of Si Surface Roughness on Electrical Characteristics of MOSFET with HfON Gate Insulator Formed by ECR Plasma Sputtering

2014 ◽  
Vol E97.C (5) ◽  
pp. 413-418 ◽  
Author(s):  
Dae-Hee HAN ◽  
Shun-ichiro OHMI ◽  
Tomoyuki SUWA ◽  
Philippe GAUBERT ◽  
Tadahiro OHMI
Keyword(s):  
Surface Roughness ◽  
Gate Insulator ◽  
Electrical Characteristics ◽  
Ecr Plasma ◽  
Plasma Sputtering

Si Surface Orientation Dependence on the Electrical Characteristics of HfN Gate Insulator with sub-0.5 nm EOT Formed by ECR Plasma Sputtering

2014 ◽  
Vol 1588 ◽  
Author(s):  
Nithi Atthi ◽  
Dae-Hee Han ◽  
Shun-ichiro Ohmi
Keyword(s):  
Cyclotron Resonance ◽  
Interfacial Layer ◽  
Electron Cyclotron Resonance ◽  
Interface Layer ◽  
Orientation Dependence ◽  
Gate Insulator ◽  
Electrical Characteristics ◽  
Ecr Plasma ◽  
Plasma Sputtering ◽  
Density Of Interface States

ABSTRACTThis paper investigated the silicon substrate orientation dependence on the electrical properties of high-κ HfN gate insulator formed by electron-cyclotron-resonance (ECR) plasma sputtering. The effect of N2/4.9%H2 forming-gas annealing (FGA) was studied. By using N2/4.9%H2 FGA at 500°C for 20 min, the interfacial layer (IL) formation was not formed and led to the zero-interface layer (ZIL). The EOTs of 0.47 and 0.51 nm with leakage current of 1.1 and 1.4 A/cm2 (@VFB -1 V) were obtained on p-Si(100) and p-Si(110), respectively. The density of interface states (Dit) with the order of 1011 cm-2eV-1 was obtained on both p-Si(100) and p-Si(110). This suggests that the direct deposition of HfN film with ZIL prevented the degradation of electrical characteristics on the p-Si(100) and p-Si(110) substrate in comparison to the case of oxide-based hafnium gate insulator.

scholarly journals Investigation of bilayer HfNx gate insulator utilizing ECR plasma sputtering

2016 ◽  
Vol 13 (10) ◽  
pp. 20160054-20160054 ◽  
Author(s):  
Nithi Atthi ◽  
Shun-ichiro Ohmi
Keyword(s):  
Gate Insulator ◽  
Ecr Plasma ◽  
Plasma Sputtering

Spin-On Glass as low temperature gate insulator

2011 ◽  
Vol 1287 ◽  
Author(s):  
Miguel A. Domínguez ◽  
Pedro Rosales ◽  
Alfonso Torres ◽  
Joel Molina ◽  
Mario Moreno ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Dielectric Constant ◽  
Refractive Index ◽  
Low Temperature ◽  
Electrical Characterization ◽  
Gate Insulator ◽  
Flexible Substrates ◽  
Electrical Characteristics ◽  
Thermally Grown

ABSTRACTIn this work, we report the characterization of Spin-On Glass (SOG) as low temperature gate insulator. Our SOG film was deposited at temperature of 200°C, which is compatible to use on flexible substrates. The optical and electrical characterization showed that the refractive index and dielectric constant are very close to those of thermally grown SiO2. Also, analysis of surface roughness by AFM is presented. We demonstrated the use of SOG as gate insulator, fabricating and characterizing inverted staggered a-SiGe:H TFTs. The observed results are promising and suggest that SOG films deposited at 200°C in the Laboratory of Microelectronics of INAOE could be an alternative to improve electrical characteristics of TFTs on low temperature flexible substrates.

tudies on Titanium Nitride Coatings - Effect of Ion Bombardment

2000 ◽  
Vol 647 ◽  
Author(s):  
K. Deenamma Vargheese ◽  
G. Mohan Rao
Keyword(s):  
Titanium Nitride ◽  
Electron Cyclotron Resonance ◽  
Film Growth ◽  
Morphological Changes ◽  
Ion Bombardment ◽  
Ion Flux ◽  
Film Properties ◽  
Ion Energy ◽  
Ecr Plasma ◽  
Plasma Sputtering

AbstractIon bombardment during thin film growth is known to cause structural and morphological changes in the deposited films and thus affecting the film properties. These effects can be due to the variation in the bombarding ion flux or their energy. We have deposited titanium nitride films by two distinctly different methods, viz. Electron Cyclotron Resonance (ECR) plasma sputtering and bias assisted reactive magnetron sputtering. The former represents low energy (typically less than 30 eV) but high density plasma (1011cm−3), whereas, in the latter case the ion energy is controlled by varying the bias to the substrate (typically a few hundred volts) but the ion flux is low (109cm−3). The deposited titanium nitride films are characterized for their structure, grain size, surface roughness and electrical resistivity.

Effect of High-Speed Blade Coating on Electrical Characteristics in Polymer Based Transistors

2020 ◽  
Vol 20 (9) ◽  
pp. 5486-5490
Author(s):  
Jun-Ik Park ◽  
Hyun-Seok Jeong ◽  
Premkumar Vincent ◽  
Jihwan Park ◽  
Do-Kyung Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface Roughness ◽  
Conjugated Polymer ◽  
Thin Film Transistors ◽  
Field Effect ◽  
High Speed ◽  
Electrical Characteristics ◽  
Field Effect Mobility ◽  
Polymer Thin Film ◽  
Blade Coating

We explore the effect of high-speed blade coating on electrical characteristics of conjugated polymer-based thin-film transistors (TFTs). As the blade-coating speed increased, the thickness of the polymer thin-film was naturally increased while the surface roughness was found to be unchanged. Polymer TFTs show two remarkable tendencies on the magnitude of field-effect mobility with increasing blade-coating speed. As the blade-coating speed increased up to 2 mm/s, the fieldeffect mobility increased to 4.72 cm2V−1s−1. However, when the coating speed reached 6 mm/s beyond 2 mm/s, the field-effect mobility rather decreased to 3.18 cm2V−1s−1. The threshold voltage was positively shifted from 2.09 to 8.29 V with respect to increase in blade-coating speed.

Preparation of high quality strontium titanate based thin films by ECR plasma sputtering

2003 ◽  
Vol 169-170 ◽  
pp. 27-31 ◽  
Author(s):  
Shoji Miyake ◽  
So Baba ◽  
Atsutoshi Niino ◽  
Ken Numata
Keyword(s):  
Thin Films ◽  
Strontium Titanate ◽  
High Quality ◽  
Ecr Plasma ◽  
Plasma Sputtering

Effect of Oxygen Pressure on Magnesium Oxide Dielectrics Grown on Gan by Plasma Assisted Gas Source Molecular Beam Epitaxy

2002 ◽  
Vol 743 ◽  
Author(s):  
A. H. Onstine ◽  
B. P. Gila ◽  
J. Kim ◽  
D. Stodilka ◽  
K. Allums ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Oxygen Pressure ◽  
Molecular Beam ◽  
Breakdown Field ◽  
Rf Plasma ◽  
Bulk Single Crystal ◽  
Electrical Characteristics ◽  
Ecr Plasma ◽  
Gas Source ◽  
Effect Of Oxygen

ABSTRACTThe effect of oxygen pressure on MgO grown by RF plasma assisted gas-source molecular beam epitaxy was investigated. Increasing oxygen pressure was found to decrease the growth rate, improve the morphology and reduce the Mg/O ratio to near that obtained from bulk single crystal MgO. By contrast, the electrical characteristics of MgO/GaN diodes showed continual improvement in breakdown field and interface state density as the pressure was decreased. The lowest pressure tested, 1×10−5Torr, produced the lowest Dit, 3×1011 eV−1cm−2, and the highest VBD, 4.4 MV/cm. Cross sectional transmission electron microscopy of the MgO grown at the lowest pressure showed the initial 40 monolayers to be epitaxial, with the remainder of the layer appearing to be fine grained poly-crystal. Comparisons with films grown using an electron cyclotron resonance (ECR) plasma suggest that higher ion energies are desirable for obtaining the best electrical characteristics.

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