Low Temperature Zinc Indium Oxide Backplane Development for Flexible OLED Displays in a Manufacturing Pilot Line Environment

2011 ◽  
Vol 1287 ◽  
Author(s):  
Michael A. Marrs ◽  
Sameer M. Venugopal ◽  
Curtis D. Moyer ◽  
Edward J. Bawolek ◽  
Dirk Bottesch ◽  
...  
Keyword(s):  
Low Temperature ◽  
Indium Oxide ◽  
Light Emitting Diode ◽  
Thin Film Transistor ◽  
Flexible Display ◽  
Threshold Voltage Shift ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Organic Light ◽  
Zinc Indium Oxide

ABSTRACTA low temperature amorphous zinc indium oxide (ZIO) thin film transistor (TFT) backplane technology for high information content flexible organic light emitting diode (OLED) displays has been developed. We have fabricated 4.1-in. diagonal OLED backplanes on the Flexible Display Center’s six-inch wafer-scale pilot line using ZIO as the active layer. The ZIO based TFTs exhibited an effective saturation mobility of 18.6 cm2/V-s and a threshold voltage shift of 2.2 Volts or less under positive and negative gate bias DC stress for 10000 seconds. We report on the critical steps in the evolution of the backplane process: the qualification of the low temperature (200°C) ZIO process, the stability of the devices under forward and reverse bias stress, the transfer of the process to flexible plastic substrates, and the fabrication of white organic light emitting diode (OLED) displays.

Tri-Metal Layered Semitransparent Electrode for Red Phosphorescent Organic Light-Emitting Diodes

2015 ◽  
Vol 15 (10) ◽  
pp. 8144-8148 ◽  
Author(s):  
Jae Woo Lee ◽  
Ho Won Lee ◽  
Song Eun Lee ◽  
Hyung Jin Yang ◽  
Sung Kyu Lee ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Glass Substrate ◽  
Light Emitting Diode ◽  
Metal Layer ◽  
Flexible Substrate ◽  
Flexible Display ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Organic Light Emitting Diode ◽  
Organic Light

In this paper, we fabricated tri-metal layered thin film semitransparent electrodes consisting of a thin conductive metal layer, sandwiched between two nickel layers. An equal red phosphorescent organic light-emitting diode (PHOLED) structure was deposited on the anodes of indium tin oxide (ITO) and three types of tri-metal layers (Ni/Al/Ni, Ni/Cu/Ni, and Ni/Ag/Ni, thickness of 3/7/3 nm in common) on a glass substrate. The optical and electrical performances of the device using Ni/Ag/Ni were improved more than the performances of the other devices due to the micro-cavity effect in accordance with the various electrode characteristics. Moreover, we fabricated the same red PHOLED structures on a flexible substrate, as a consequence, showed competitive emission characteristics compared to the devices fabricated on a glass substrate. Therefore, this study could succeed to additional research on flexible display panel and light-emitting devices with ITO-free electrodes.

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