Silicon Surface Morphologies after Femtosecond Laser Irradiation

MRS Bulletin ◽  
2006 ◽  
Vol 31 (8) ◽  
pp. 626-633 ◽  
Author(s):  
Brian R. Tull ◽  
James E. Carey ◽  
Eric Mazur ◽  
Joel P. McDonald ◽  
Steven M. Yalisove
Keyword(s):  
Femtosecond Laser ◽  
Silicon Surface ◽  
Sulfur Hexafluoride ◽  
Silicon Oxide ◽  
Single Crystal Silicon ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Femtosecond Laser Irradiation ◽  
Crystal Silicon ◽  
Surface Morphologies

AbstractIn this article, we present summaries of the evolution of surface morphology resulting from the irradiation of single-crystal silicon with femtosecond laser pulses. In the first section, we discuss the development of micrometer-sized cones on a silicon surface irradiated with hundreds of femtosecond laser pulses in the presence of sulfur hexafluoride and other gases. We propose a general formation mechanism for the surface spikes. In the second section, we discuss the formation of blisters or bubbles at the interface between a thermal silicon oxide and a silicon surface after irradiation with one or more femtosecond laser pulses. We discuss the physical mechanism for blister formation and its potential use as channels in microfluidic devices.

Diffraction on a Microbubble and the Morphology of the Silicon Surface Irradiated through Glycerol by a Pair of Femtosecond Laser Pulses

JETP Letters ◽  
2021 ◽  
Vol 113 (2) ◽  
pp. 75-81
Author(s):  
N. A. Inogamov ◽  
S. A. Romashevskiy ◽  
A. I. Ignatov ◽  
V. V. Zhakhovsky ◽  
V. A. Khokhlov ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Silicon Surface ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses

scholarly journals Maskless lithography using silicon oxide etch-stop layer induced by megahertz repetition femtosecond laser pulses

2011 ◽  
Vol 19 (11) ◽  
pp. 10834 ◽  
Author(s):  
Amirkianoosh Kiani ◽  
Krishnan Venkatakrishnan ◽  
Bo Tan ◽  
Venkat Venkataramanan
Keyword(s):  
Femtosecond Laser ◽  
Silicon Oxide ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Maskless Lithography ◽  
Etch Stop ◽  
Etch Stop Layer

Colorizing silicon surface with regular nanohole arrays induced by femtosecond laser pulses

2012 ◽  
Vol 37 (6) ◽  
pp. 1106 ◽  
Author(s):  
Cheng-Yun Zhang ◽  
Jian-Wu Yao ◽  
Hai-Ying Liu ◽  
Qiao-Feng Dai ◽  
Li-Jun Wu ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Silicon Surface ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Nanohole Arrays

scholarly journals Laser Shock Peening of Ti6Al4V Alloy with Combined Nanosecond and Femtosecond Laser Pulses

Metals ◽  
2021 ◽  
Vol 12 (1) ◽  
pp. 26
Author(s):  
Rujian Sun ◽  
Guangzhi He ◽  
Hailin Bai ◽  
Jianfeng Yan ◽  
Wei Guo
Keyword(s):  
Femtosecond Laser ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Laser Shock Peening ◽  
Metallic Materials ◽  
Laser Shock ◽  
Laser Absorption ◽  
Shock Peening ◽  
Surface Morphologies ◽  
Equiaxed Grains

Laser shock peening (LSP) with nanosecond or femtosecond laser pulses is applied to improve the mechanical properties of metallic materials. Thus, it is necessary to compare the effects of different processing methods on microstructure changes and property improvement. In this study, nanosecond LSP (NLSP), femtosecond LSP (FLSP), and LSP with combined nanosecond and femtosecond laser pulses (F-NLSP) are conducted on Ti6Al4V alloys to compare the surface morphologies, in-depth microstructures, and nanohardness changes. In FLSP, the peened surface is smooth, and the affected depth is limited near the peened surface. NLSPed and F-NLSPed samples present rough surfaces due to the severe ablation process. Small equiaxed grains with no preferred grain orientation are denser in F-NLSPed samples than that in NLSPed samples. Compared with NLSPed samples, the affected depth and amplitude of in-depth nanohardness are larger in F-NLSPed samples. This is attributed to the increased laser absorption of incident laser on the treated surface by femtosecond laser pulses. The results in this study show the effects of different LSP methods and provide chances in engineering potentials for material property improvements.

scholarly journals Maskless Lithography Using Silicon Oxide Etch-Stop Layer Induced by Megahertz Repetition Femtosecond Laser Pulses

2021 ◽  
Author(s):  
Amirkianoosh Kiani ◽  
Krishnan Venkatakrishnan ◽  
Bo Tan ◽  
Venkat Venkataramanan
Keyword(s):  
Femtosecond Laser ◽  
Thin Layer ◽  
Silicon Oxide ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Maskless Lithography ◽  
Silicon Oxide Layer ◽  
X Ray ◽  
Etch Stop ◽  
Etch Stop Layer

In this study we report a new method for maskless lithography fabrication process by a combination of direct silicon oxide etch-stop layer patterning and wet alkaline etching. A thin layer of etch-stop silicon oxide of predetermined pattern was first generated by irradiation with high repetition (MHz) ultrafast (femtosecond) laser pulses in air and at atmospheric pressure. The induced thin layer of silicon oxide is used as an etch stop during etching process in alkaline etchants such as KOH. Our proposed method has the potential to enable low-cost, flexible, high quality patterning for a wide variety of application in the field of micro- and nanotechnology, this technique can be leading to a promising solution for maskless lithography technique. A Scanning Electron Microscope (SEM), optical microscopy, Micro-Raman, Energy Dispersive X-ray (EDX) and X-ray diffraction spectroscopy were used to analyze the silicon oxide layer induced by laser pulses.

AFM investigation of nanoparticles formed on silicon surface by femtosecond laser pulses

2009 ◽  
Vol 73 (1) ◽  
pp. 39-41 ◽  
Author(s):  
L. A. Golovan ◽  
I. O. Djun ◽  
A. E. Dokukina ◽  
S. V. Zabotnov ◽  
A. A. Ezhov ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Silicon Surface ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses

scholarly journals Processing of Single-Walled Carbon Nanotubes with Femtosecond Laser Pulses

2019 ◽  
Vol 9 (19) ◽  
pp. 4022 ◽  
Author(s):  
Zeyad Almutairi ◽  
Kaleem Ahmad ◽  
Mosaad Alanazi ◽  
Abdulaziz Alhazaa
Keyword(s):  
Carbon Nanotubes ◽  
Femtosecond Laser ◽  
Laser Irradiation ◽  
Cost Effective ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Femtosecond Laser Irradiation ◽  
Single Wall Carbon Nanotubes ◽  
Glass Substrates ◽  
Focus Plane

There are continued efforts to process and join single wall carbon nanotubes (SWCNTs) in order to exploit their exceptional functional properties for real-world applications. In this work, we report experimental observations of femtosecond laser irradiation on SWCNTs, in order to process and join them through an efficient and cost-effective technique. The nanotubes were deagglomerated in ethanol by an ultrasonicator and thin slurries of SWCNTs were spread evenly on glass substrates. A laser micromachining workstation for laboratory FemtoLAB (workshop of photonics) has been employed to irradiate the different SWCNTs film samples. The effect of laser parameters, such as pulse wavelength, laser power, etc., were systematically tuned to see the possibility of joining the SWCNTs ropes. Several experiments have been performed to optimize the parameters on different samples of SWCNTs. In general, the nanotubes were mostly damaged by the infrared (1st harmonics femtosecond laser) irradiation on the focal plane. However, the less damaging effect was observed for second harmonics (green wavelength) irradiation. The results suggest some joining of nanotubes along the sides of the focus plane, as well as on the center at the brink of nanotubes. The joining is considered to be established within the region of the high field intensity of the exposed femtosecond laser beam.

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