scholarly journals Development of diagnostic method of rapidly melting processes at crystalline silicon surface heated with femtosecond laser pulses

2008 ◽  
Vol 20 (1/2) ◽  
pp. 7-10
Author(s):  
Kenta TAKAKUSAKI ◽  
Ryo INOUE ◽  
Tomoya NAKATANI ◽  
Takashi YAGI
Keyword(s):  
Femtosecond Laser ◽  
Silicon Surface ◽  
Diagnostic Method ◽  
Crystalline Silicon ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses

SURFACE DAMAGE OF CRYSTALLINE SILICON BY LOW FLUENCE FEMTOSECOND LASER PULSES

2004 ◽  
Vol 11 (02) ◽  
pp. 217-221 ◽  
Author(s):  
Y. C. LAM ◽  
D. V. TRAN ◽  
H. Y. ZHENG ◽  
V. M. MURUKESHAN ◽  
J. C. CHAI ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Atmospheric Pressure ◽  
Silicon Surface ◽  
Crystalline Silicon ◽  
Surface Damage ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Lower Number ◽  
Circularly Polarized ◽  
Multiple Pulses

Crystalline silicon kept at atmospheric pressure was irradiated with 775 nm multiple laser pulses of 150 fs duration at repetition rate 250 Hz. The laser pulses were circularly polarized, with a peak laser fluence of 0.03 J/cm2. We observed surface damage at a much lower fluence and lower number of pulses compared to that reported in the literature. Surface damage, cracks and pits formation were observed. The evolution of the surface damage as a function of the number of laser pulses was recorded. The observations were in contrast to the findings in the literature that the silicon surface became structured when irradiated by multiple pulses.

Diffraction on a Microbubble and the Morphology of the Silicon Surface Irradiated through Glycerol by a Pair of Femtosecond Laser Pulses

JETP Letters ◽  
2021 ◽  
Vol 113 (2) ◽  
pp. 75-81
Author(s):  
N. A. Inogamov ◽  
S. A. Romashevskiy ◽  
A. I. Ignatov ◽  
V. V. Zhakhovsky ◽  
V. A. Khokhlov ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Silicon Surface ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses

Colorizing silicon surface with regular nanohole arrays induced by femtosecond laser pulses

2012 ◽  
Vol 37 (6) ◽  
pp. 1106 ◽  
Author(s):  
Cheng-Yun Zhang ◽  
Jian-Wu Yao ◽  
Hai-Ying Liu ◽  
Qiao-Feng Dai ◽  
Li-Jun Wu ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Silicon Surface ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Nanohole Arrays

scholarly journals Micro/Nano Amorphization/Oxidation Of Silicon Induced By High Repetition Femtosecond Laser Pulses

2021 ◽  
Author(s):  
Amirkianoosh Kiani
Keyword(s):  
Solar Cell ◽  
Femtosecond Laser ◽  
Surface Temperature ◽  
Pulse Duration ◽  
Analytical Model ◽  
Repetition Rate ◽  
Crystalline Silicon ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Laser Parameters

The main aim of this thesis is to develop a new method for direct micro/nano amorphization/oxidation of silicon using femtosecond laser irradiation and its applications in maskless lithography and solar cell fabrication. Amorphization and oxidation occur when crystalline silicon is exposed to the irradiation of femtosecond laser pulses below the ablation threshold. Mechanisms of morphization and oxidation were discussed and the surface temperature model was developed to study the relation between laser parameters and observed amorphization and oxidation. A systematic theoretical and experimental study of the influence of the laser parameters on the quality of amorphorized area and the size of the feature fabricated through amorphization has been studied. It was found that during the process of silicon amorphization and oxidation, the higher repetition rate of laser pulses yields smooth morphology with better repeatability. Increasing pulse duration and number of pulses were seen to increase the line width. However, increasing the number of pulses does not result in ablation of the target area. An analytical model was developed for the calculation of the average surface temperature after n-pulses. The effect of the laser pulse width was investigated by developing an analytical model for the calculation of the non-dimensional surface temperature with various pulse widths. It was found from experimental and analytical results that for a constant power and repetition rate, an increase in the pulse duration corresponds to a significant increase in the surface temperature. It results in an increase in the amount of modified material as well as improvement of light absorption in the case of amorphization. The main aim of this thesis is to develop a new method for direct micro/nano amorphization/oxidation of silicon using femtosecond laser irradiation and its applications in maskless lithography and solar cell fabrication.Amorphization and oxidation occur when crystalline silicon is exposed to the irradiation of femtosecond laser pulses below the ablation threshold. Mechanisms of morphization and oxidation were discussed and the surface temperature model was developed to study the relation between laser parameters and observed amorphization and oxidation. A systematic theoretical and experimental study of the influence of the laser parameters on the quality of amorphorized area and the size of the feature fabricated through amorphization has been studied. It was found that during the process of silicon amorphization and oxidation, the higher repetition rate of laser pulses yields smooth morphology with better repeatability. Increasing pulse duration and number of pulses were seen to increase the line width. However, increasing the number of pulses does not result in ablation of the target area. An analytical model was developed for the calculation of the average surface temperature after n-pulses.The effect of the laser pulse width was investigated by developing an analytical model for the calculation of the non-dimensional surface temperature with various pulse widths. It was found from experimental and analytical results that for a constant power and repetition rate, an increase in the pulse duration corresponds to a significant increase in the surface temperature. It results in an increase in the amount of modified material as well as improvement of light absorption in the case of amorphization.The amorphous silicon and silicon oxide can act as an etch stop. Therefore, maskless lithography iis possible with the direct patterning (amorphization and oxidation) of crystalline silicon. Experimental results have proved the feasibility of the proposed concepts. The thin-film of amorphous silicon generated on the silicon substrate has a potential for use in photovoltaic devices and solar cell fabrication. In comparison with previous methods, the direct oxidation/amorphization of silicon induced by the femtosecond laser is a maskless single-step technique which offers a higher flexibility and reduced processing time.

AFM investigation of nanoparticles formed on silicon surface by femtosecond laser pulses

2009 ◽  
Vol 73 (1) ◽  
pp. 39-41 ◽  
Author(s):  
L. A. Golovan ◽  
I. O. Djun ◽  
A. E. Dokukina ◽  
S. V. Zabotnov ◽  
A. A. Ezhov ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Silicon Surface ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses

Inscription of optical waveguides in crystalline silicon by mid-infrared femtosecond laser pulses

2005 ◽  
Vol 30 (9) ◽  
pp. 964 ◽  
Author(s):  
Amir H. Nejadmalayeri ◽  
Peter R. Herman ◽  
Jonas Burghoff ◽  
Matthias Will ◽  
Stefan Nolte ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Optical Waveguides ◽  
Crystalline Silicon ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Mid Infrared

Formation of nanoparticles on the silicon surface under the effect of femtosecond laser pulses

2007 ◽  
Vol 41 (8) ◽  
pp. 998-1001 ◽  
Author(s):  
S. V. Zabotnov ◽  
A. A. Ezhov ◽  
L. A. Golovan’ ◽  
M. A. Lastovkina ◽  
V. I. Panov ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Silicon Surface ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses

scholarly journals Micro/Nano Amorphization/Oxidation Of Silicon Induced By High Repetition Femtosecond Laser Pulses

2021 ◽  
Author(s):  
Amirkianoosh Kiani
Keyword(s):  
Solar Cell ◽  
Femtosecond Laser ◽  
Surface Temperature ◽  
Pulse Duration ◽  
Analytical Model ◽  
Repetition Rate ◽  
Crystalline Silicon ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Laser Parameters

The main aim of this thesis is to develop a new method for direct micro/nano amorphization/oxidation of silicon using femtosecond laser irradiation and its applications in maskless lithography and solar cell fabrication. Amorphization and oxidation occur when crystalline silicon is exposed to the irradiation of femtosecond laser pulses below the ablation threshold. Mechanisms of morphization and oxidation were discussed and the surface temperature model was developed to study the relation between laser parameters and observed amorphization and oxidation. A systematic theoretical and experimental study of the influence of the laser parameters on the quality of amorphorized area and the size of the feature fabricated through amorphization has been studied. It was found that during the process of silicon amorphization and oxidation, the higher repetition rate of laser pulses yields smooth morphology with better repeatability. Increasing pulse duration and number of pulses were seen to increase the line width. However, increasing the number of pulses does not result in ablation of the target area. An analytical model was developed for the calculation of the average surface temperature after n-pulses. The effect of the laser pulse width was investigated by developing an analytical model for the calculation of the non-dimensional surface temperature with various pulse widths. It was found from experimental and analytical results that for a constant power and repetition rate, an increase in the pulse duration corresponds to a significant increase in the surface temperature. It results in an increase in the amount of modified material as well as improvement of light absorption in the case of amorphization. The main aim of this thesis is to develop a new method for direct micro/nano amorphization/oxidation of silicon using femtosecond laser irradiation and its applications in maskless lithography and solar cell fabrication.Amorphization and oxidation occur when crystalline silicon is exposed to the irradiation of femtosecond laser pulses below the ablation threshold. Mechanisms of morphization and oxidation were discussed and the surface temperature model was developed to study the relation between laser parameters and observed amorphization and oxidation. A systematic theoretical and experimental study of the influence of the laser parameters on the quality of amorphorized area and the size of the feature fabricated through amorphization has been studied. It was found that during the process of silicon amorphization and oxidation, the higher repetition rate of laser pulses yields smooth morphology with better repeatability. Increasing pulse duration and number of pulses were seen to increase the line width. However, increasing the number of pulses does not result in ablation of the target area. An analytical model was developed for the calculation of the average surface temperature after n-pulses.The effect of the laser pulse width was investigated by developing an analytical model for the calculation of the non-dimensional surface temperature with various pulse widths. It was found from experimental and analytical results that for a constant power and repetition rate, an increase in the pulse duration corresponds to a significant increase in the surface temperature. It results in an increase in the amount of modified material as well as improvement of light absorption in the case of amorphization.The amorphous silicon and silicon oxide can act as an etch stop. Therefore, maskless lithography iis possible with the direct patterning (amorphization and oxidation) of crystalline silicon. Experimental results have proved the feasibility of the proposed concepts. The thin-film of amorphous silicon generated on the silicon substrate has a potential for use in photovoltaic devices and solar cell fabrication. In comparison with previous methods, the direct oxidation/amorphization of silicon induced by the femtosecond laser is a maskless single-step technique which offers a higher flexibility and reduced processing time.

Sign in / Sign up

Export Citation Format

Share Document