Inkjet Printing of Polymer Thin-Film Transistor Circuits

MRS Bulletin ◽  
2003 ◽  
Vol 28 (11) ◽  
pp. 829-834 ◽  
Author(s):  
Seamus E. Burns ◽  
Paul Cain ◽  
John Mills ◽  
Jizheng Wang ◽  
Henning Sirringhaus
Keyword(s):  
Thin Film ◽  
Inkjet Printing ◽  
Thin Film Transistor ◽  
Polymer Thin Film ◽  
Active Matrix ◽  
Polymer Dispersed Liquid Crystal ◽  
Polymer Semiconductors ◽  
Polymer Dispersed ◽  
Placement Accuracy ◽  
Inkjet Printing Technology

AbstractWe present a process for manufacturing printable thin-film transistors (TFTs) that is based on solution processing and direct inkjet printing of polymer semiconductors, dielectrics, and conductors, as well as inorganic nanoparticle conductors. We show that the high device yield, uniformity, and resolution required for thin-film electronic applications can be achieved by using a substrate that contains a surface energy pattern to control the flow and spreading of inkjet droplets. This technique overcomes many of the limitations of current inkjet printing technology related to its limited droplet placement accuracy. We demonstrate the potential of this printing-based TFT manufacturing process with the fabrication of 50 dpi active-matrix, polymer dispersed liquid-crystal and Gyricon Smartpaper electronic paper displays.

All jet-printed polymer thin-film transistor active-matrix backplanes

2004 ◽  
Vol 85 (15) ◽  
pp. 3304-3306 ◽  
Author(s):  
A. C. Arias ◽  
S. E. Ready ◽  
R. Lujan ◽  
W. S. Wong ◽  
K. E. Paul ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Polymer Thin Film ◽  
Active Matrix

Low Temperature Silicides for Poly-Silicon Thin Film Transistor Applications

1995 ◽  
Vol 402 ◽  
Author(s):  
G. T. Sarcona ◽  
M. K. Hatalis
Keyword(s):  
Thin Film ◽  
Sheet Resistance ◽  
Thin Film Transistor ◽  
Surface Preparation ◽  
Silicon Thin Film ◽  
Active Matrix ◽  
Cobalt Nickel ◽  
Silicon Materials ◽  
Cobalt Silicides ◽  
Matrix Liquid

AbstractThin films of cobalt, nickel, and tungsten were sputtered on three types of silicon materials to explore their potential for use as silicides in thin film transistor technologies for active matrix liquid crystal displays. The metals were sputtered onto single-crystal, polycrystalline, and amorphous silicon. The metals were annealed in vacuum after deposition over temperatures ranging from 250°C to 750°C. The sheet resistance of the resulting silicide films was measured using a four point probe apparatus. Cobalt silicides with sheet resistance of less than 4 Ω/ were formed at 600°C. Nickel produced films with sheet resistance below 10 Ω/▪ at 350°C, though the surface was required to be vacuum-clean. In this study, tungsten did not produce silicides. Surface preparation has been found to be an important factor in tungsten and nickel silicidation.

Fast Development of Self‐Assembled, Highly Oriented Polymer Thin Film and Observation of Dual Sensing Behavior of Thin Film Transistor for Ammonia Vapor

2019 ◽  
Vol 220 (11) ◽  
pp. 1900010
Author(s):  
Praveen Kumar Sahu ◽  
Lalit Chandra ◽  
Rajiv K. Pandey ◽  
Niraj Singh Mehta ◽  
R. Dwivedi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Ammonia Vapor ◽  
Oriented Polymer ◽  
Polymer Thin Film ◽  
Fast Development ◽  
Self Assembled ◽  
Dual Sensing

scholarly journals Highly Sensitive Active-Matrix Driven Self-Capacitive Fingerprint Sensor based on Oxide Thin Film Transistor

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Guk-Jin Jeon ◽  
Seung-Hwan Lee ◽  
Seung Hee Lee ◽  
Jun-Bo Shim ◽  
Jong-Hyun Ra ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Active Matrix ◽  
Highly Sensitive ◽  
Fingerprint Sensor

scholarly journals Pentacene-Based Thin Film Transistor with Inkjet-Printed Nanocomposite High-K Dielectrics

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
Chao-Te Liu ◽  
Wen-Hsi Lee ◽  
Jui-Feng Su
Keyword(s):  
Thin Film ◽  
Inkjet Printing ◽  
Gate Dielectric ◽  
Dielectric Film ◽  
Thin Film Transistor ◽  
Current Ratio ◽  
Large Current ◽  
High K ◽  
Dose Concentration ◽  
Top Contact

The nanocomposite gate insulating film of a pentacene-based thin film transistor was deposited by inkjet printing. In this study, utilizing the pearl miller to crumble the agglomerations and the dispersant to well stabilize the dispersion of nano-TiO2particles in the polymer matrix of the ink increases the dose concentration for pico-jetting, which could be as the gate dielectric film made by inkjet printing without the photography process. Finally, we realized top contact pentacene-TFTs and successfully accomplished the purpose of directly patternability and increase the performance of the device based on the nanocomposite by inkjet printing. These devices exhibited p-channel TFT characteristics with a high field-effect mobility (a saturation mobility of ̃0.58 cm2 V−1 s−1), a large current ratio (>103) and a low operation voltage (<6 V). Furthermore, we accorded the deposited mechanisms which caused the interface difference between of inkjet printing and spin coating. And we used XRD, SEM, Raman spectroscopy to help us analyze the transfer characteristics of pentacene films and the performance of OTFTs.

Integration and characterization of amorphous silicon thin-film transistor and Mo-tips for active-matrix cathodes

2002 ◽  
Vol 49 (7) ◽  
pp. 1136-1142
Author(s):  
Do-Hyung Kim ◽  
Yoon-Ho Song ◽  
Young-Rae Cho ◽  
Chi-Sun Hwang ◽  
Bong-Chul Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistor ◽  
Silicon Thin Film ◽  
Active Matrix

scholarly journals P3HT Nanofibrils Thin-Film Transistors by Adsorbing Deposition in Suspension

Materials ◽  
2019 ◽  
Vol 12 (21) ◽  
pp. 3643 ◽  
Author(s):  
Shuichi Nagamatsu ◽  
Masataka Ishida ◽  
Shougo Miyajima ◽  
Shyam S. Pandey
Keyword(s):  
Thin Film ◽  
Conjugated Polymer ◽  
Thin Film Transistors ◽  
Preparation Method ◽  
Substrate Surface ◽  
Thin Film Transistor ◽  
Current Ratio ◽  
P3ht Film ◽  
Polymer Thin Film ◽  
Film Preparation

A novel film preparation method utilizing polymer suspension, entitled adsorbing deposition in suspensions (ADS), has been proposed. The poly(3-hexylthiophene) (P3HT) toluene solution forms P3HT nanofibrils dispersed suspension by aging. P3HT nanofibrils are highly crystallized with sharp vibronic absorption spectra. By the ADS method, only P3HT nanofibrils in suspension can be deposited on the substrate surface without any disordered fraction from the dissolved P3HT in suspension. Formed ADS film contains only the nanostructured conjugated polymer. Fabricated polymer thin-film transistor (TFT) utilizing ADS P3HT film shows good TFT performances with low off current, narrow subthreshold swing and large on/off current ratio.

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