Fast Development of Self‐Assembled, Highly Oriented Polymer Thin Film and Observation of Dual Sensing Behavior of Thin Film Transistor for Ammonia Vapor

2019 ◽  
Vol 220 (11) ◽  
pp. 1900010
Author(s):  
Praveen Kumar Sahu ◽  
Lalit Chandra ◽  
Rajiv K. Pandey ◽  
Niraj Singh Mehta ◽  
R. Dwivedi ◽  
...  
Polymer Korea ◽  
2019 ◽  
Vol 43 (4) ◽  
pp. 553-558
Author(s):  
Jun Hwa Park ◽  
Yu Ra Choi ◽  
Bo Yeon Min ◽  
Jun Young Moon ◽  
Jae Won Lee ◽  
...  

IEEE Access ◽  
2020 ◽  
Vol 8 ◽  
pp. 101834-101839
Author(s):  
Wei Zhong ◽  
Ruohe Yao ◽  
Zhijian Chen ◽  
Linfeng Lan ◽  
Rongsheng Chen

2020 ◽  
Vol 14 (3) ◽  
pp. 314-322
Author(s):  
Baolin Zhao ◽  
Mikhail Feofanov ◽  
Dominik Lungerich ◽  
Hyoungwon Park ◽  
Tobias Rejek ◽  
...  

2004 ◽  
Vol 85 (15) ◽  
pp. 3304-3306 ◽  
Author(s):  
A. C. Arias ◽  
S. E. Ready ◽  
R. Lujan ◽  
W. S. Wong ◽  
K. E. Paul ◽  
...  

1997 ◽  
Vol 488 ◽  
Author(s):  
J. Collet ◽  
O. Tharaud ◽  
C. Legrand ◽  
A. Chapoton ◽  
D. Vuillaume

AbstractHigh performance thin-film transistors (TFT) made of conducting oligomers are obtained when the organic films are well ordered at a molecular level. Highly ordered films are obtained provided that oligomers have a sufficient mobility on the substrate surface during film formation. One possible way to fulfill such a condition is to evaporate oligomers on heated substrates [1,2]. In this work, we suggest that a high surface mobility is obtained by a chemical functionalization of the silicon dioxide surface, and the corresponding improvements of the TFT performances are evidenced. A self-assembled monolayer of octadecyltrichlorosilane (OTS) was deposited on the SiO2 by chemisorption from solution before the evaporation of sexithiophene film. Room temperature current-voltage measurements indicate that the presence of the OTS monolayer improves TFT performances : threshold voltage is decreased, subthreshold slope is decreased, a high current ratio Ion/Ioff is obtained for a reduced gate voltage excursion, the fieldeffect mobility is slightly increased. We have also fabricated and characterized a nanometer scale organic FET (gate length = 50 nm) made of 6T films and only with a self-assembled monolayer as the insulating film between the degenerated silicon substrate (gate) and the conducting channel (no thick SiO2, we call it « oxide-free » organic FET). Performances of this nanometer size organic FETs are the following : subthreshold slope of 0.35V/dec, threshold voltage of −1.3V, effective mobility of 2×10−4 cm2/V.s.


2012 ◽  
Author(s):  
S. Sinha ◽  
C. -H. Wang ◽  
A. K. M. Maidul Islam ◽  
Y. -W. Yang ◽  
M. Mukherjee

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