Integration and characterization of amorphous silicon thin-film transistor and Mo-tips for active-matrix cathodes

2002 ◽  
Vol 49 (7) ◽  
pp. 1136-1142
Author(s):  
Do-Hyung Kim ◽  
Yoon-Ho Song ◽  
Young-Rae Cho ◽  
Chi-Sun Hwang ◽  
Bong-Chul Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistor ◽  
Silicon Thin Film ◽  
Active Matrix

A High-Voltage Hydrogenated Amorphous Silicon Thin-Film Transistor for Reflective Active-Matrix Cholesteric LCD

1999 ◽  
Vol 558 ◽  
Author(s):  
J.Y. Nahm ◽  
J.H. Lan ◽  
J. Kanicki
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Double Layer ◽  
High Voltage ◽  
Thin Film Transistor ◽  
Hydrogenated Amorphous Silicon ◽  
Gate Insulator ◽  
Silicon Thin Film ◽  
Active Matrix ◽  
Hydrogenated Amorphous

ABSTRACTA high-voltage hydrogenated amorphous silicon thin film transistor (H-V a-Si:H TFT) with thick double layer gate insulator (∼0.95 μm) has been developed for reflective active-matrix cholesteric liquid crystal displays. The double layer gate insulator consists of 0.85 and 0.10 μm thick benzocyclobutene and hydrogenated amorphous silicon nitride, respectively. This HV a-Si:H TFT operates at the gate-tosource and drain-to-source biases up to 100V without any serious leakage current degradation and device breakdown.

Active‐matrix cathodes though integration of amorphous silicon thin‐film transistor with triode ‐and diode‐type field emitters

2001 ◽  
Vol 2 (3) ◽  
pp. 72-77
Author(s):  
Yoon‐Ho Song ◽  
Young‐Rae Cho ◽  
Chi‐Sun Hwang ◽  
Bong‐Chul Kim ◽  
Seong‐Deok Ahn ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistor ◽  
Silicon Thin Film ◽  
Active Matrix ◽  
Field Emitters

Large Scale and Large Area Amorphous Silicon Thin Film Transistor Arrays for Active Matrix Liquid Crystal Displays

1987 ◽  
Vol 95 ◽  
Author(s):  
H. Miki ◽  
S. Kawamoto ◽  
T. Horikawa ◽  
T. Maejima ◽  
H. Sakamoto ◽  
...  
Keyword(s):  
Thin Film ◽  
Liquid Crystal ◽  
Amorphous Silicon ◽  
Etching Rate ◽  
Thin Film Transistor ◽  
Liquid Crystal Displays ◽  
Silicon Nitride Film ◽  
Silicon Thin Film ◽  
Active Matrix ◽  
Matrix Liquid

AbstractThe preparation and properties of hydrogenated amorphous silicon thin film transistor arrays for active matrix liquid crystal displays are reported. The effect of amorphous silicon film preparation conditions on the field effect mobility of thin film transistors was investigated. The dry etching rate of silicon nitride film was studied.The thin film transistor arrays have 408 ˜ 640 transistors on the first version and 450 ˜ 640 ˜ 3 transistors on the second version. The liquid crystal panel fabricated using the first version arrays showed good characteristics.

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