Toward the nanoscale study of insect physiology using an atomic force microscopy-based nanostethoscope

MRS Bulletin ◽  
2012 ◽  
Vol 37 (5) ◽  
pp. 522-527 ◽  
Author(s):  
I. Sokolov
Keyword(s):  
Atomic Force Microscopy ◽  
Insect Physiology ◽  
Force Microscopy ◽  
Atomic Force ◽  
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Abstract

scholarly journals Pendeo-Epitaxy of Gallium Nitride and Aluminum Nitride Films and Heterostructures on Silicon Carbide Substrate

1999 ◽  
Vol 4 (S1) ◽  
pp. 124-129 ◽  
Author(s):  
T. Gehrke ◽  
K. J. Linthicum ◽  
D. B. Thomson ◽  
P. Rajagopal ◽  
A. D. Batchelor ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Atomic Force Microscopy ◽  
Seed Layer ◽  
Side Wall ◽  
Force Microscopy ◽  
Atomic Force ◽  
Silicon Carbide Substrate ◽  
Image Position ◽  
Scanning Electron

Pendeo-epitaxy of individual GaN and AlxGa12−xN films and single- and multi-layer heterostructures of these materials have been achieved on a columnar GaN seed layer using metallorganic vapor phase epitaxy. These structures have been characterized using scanning electron microscopy and atomic force microscopy. The RMS roughness value of the grown side wall plane (110) of these structures was 0.099 nm.

Probing local electrochemical activity within yttria-stabilized-zirconia via in situ high-temperature atomic force microscopy

2014 ◽  
Vol 30 (3) ◽  
pp. 357-363 ◽  
Author(s):  
Jiaxin Zhu ◽  
Carlos R. Pérez ◽  
Tae-Sik Oh ◽  
Rainer Küngas ◽  
John M. Vohs ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
High Temperature ◽  
Electrochemical Activity ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Force Microscopy ◽  
Atomic Force ◽  
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Abstract

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