Bending manipulation and measurements of fracture strength of silicon and oxidized silicon nanowires by atomic force microscopy

2011 ◽  
Vol 27 (3) ◽  
pp. 562-570 ◽  
Author(s):  
Gheorghe Stan ◽  
Sergiy Krylyuk ◽  
Albert V. Davydov ◽  
Robert F. Cook
Keyword(s):  
Atomic Force Microscopy ◽  
Fracture Strength ◽  
Silicon Nanowires ◽  
Force Microscopy ◽  
Atomic Force ◽  
Image Position

Abstract

Fabrication of SiNWs-FET Nanostructure Via Atomic Force Microscopy Lithography

2020 ◽  
Vol 301 ◽  
pp. 103-110
Author(s):  
Nurain Najihah Alias ◽  
Khatijah Aisha Yaacob ◽  
Kuan Yew Cheong
Keyword(s):  
Atomic Force Microscopy ◽  
Relative Humidity ◽  
Silicon Nanowires ◽  
Silicon Oxide ◽  
Silicon Layer ◽  
Silicon On Insulator ◽  
Force Microscopy ◽  
Atomic Force ◽  
Effect Transistor ◽  
P Type

The unique electrical properties of silicon nanowires (SiNWs) is one of the reasons it become an attractive transducer for biosensor nowadays. Positive (holes) and negative (electron) charge carriers from SiNWs can simply interact with either positive or negative charge of sensing target. In this paper, we have studied the fabrication of silicon nanowires field effect transistor (SiNWs-FET) nanostructure patterned on 15 Ω resistivity of p-type silicon on insulator (SOI) wafer fabricated via atomic force microscopy lithography technique. To fabricate SiNWs-FET nanostructure, a conductive AFM tip, Cr/Pt cantilever tip, was used then various value of applied voltage, writing speed and relative humidity were studied. Subsequent, followed by wet etching processes, admixture of tetramethylammonium hydroxide (TMAH) and isopropyl alcohol (IPA) were used to remove the undesired of silicon layer and diluted hydrofluoric acid (HF) was used to remove the oxide layer. From the results, it shows that, cantilever tip at 9 V with 0.4 μm/s writing speed and relative humidity between 55% - 60% gives the best formation of silicon oxide to fabricate SiNWs-FET nanostructure.

scholarly journals Pendeo-Epitaxy of Gallium Nitride and Aluminum Nitride Films and Heterostructures on Silicon Carbide Substrate

1999 ◽  
Vol 4 (S1) ◽  
pp. 124-129 ◽  
Author(s):  
T. Gehrke ◽  
K. J. Linthicum ◽  
D. B. Thomson ◽  
P. Rajagopal ◽  
A. D. Batchelor ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Atomic Force Microscopy ◽  
Seed Layer ◽  
Side Wall ◽  
Force Microscopy ◽  
Atomic Force ◽  
Silicon Carbide Substrate ◽  
Image Position ◽  
Scanning Electron

Pendeo-epitaxy of individual GaN and AlxGa12−xN films and single- and multi-layer heterostructures of these materials have been achieved on a columnar GaN seed layer using metallorganic vapor phase epitaxy. These structures have been characterized using scanning electron microscopy and atomic force microscopy. The RMS roughness value of the grown side wall plane (110) of these structures was 0.099 nm.

Probing local electrochemical activity within yttria-stabilized-zirconia via in situ high-temperature atomic force microscopy

2014 ◽  
Vol 30 (3) ◽  
pp. 357-363 ◽  
Author(s):  
Jiaxin Zhu ◽  
Carlos R. Pérez ◽  
Tae-Sik Oh ◽  
Rainer Küngas ◽  
John M. Vohs ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
High Temperature ◽  
Electrochemical Activity ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Force Microscopy ◽  
Atomic Force ◽  
Image Position

Abstract

scholarly journals Nanomechanical Properties of Lithiated Silicon Nanowires Probed with Atomic Force Microscopy

2011 ◽  
Vol 20 (6) ◽  
pp. 395-402
Author(s):  
Hyun-Soo Lee ◽  
Weon-Ho Shin ◽  
Sang-Ku Kwon ◽  
Jang-Wook Choi ◽  
Jeong-Young Park
Keyword(s):  
Atomic Force Microscopy ◽  
Silicon Nanowires ◽  
Force Microscopy ◽  
Nanomechanical Properties ◽  
Atomic Force
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