Probing local electrochemical activity within yttria-stabilized-zirconia via in situ high-temperature atomic force microscopy

2014 ◽  
Vol 30 (3) ◽  
pp. 357-363 ◽  
Author(s):  
Jiaxin Zhu ◽  
Carlos R. Pérez ◽  
Tae-Sik Oh ◽  
Rainer Küngas ◽  
John M. Vohs ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
High Temperature ◽  
Electrochemical Activity ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Force Microscopy ◽  
Atomic Force ◽  
Image Position

Abstract

scholarly journals Noise and Electrical Oscillations Generation during the Investigation of the Resistive Switching in the Yttria Stabilized Zirconia Films by Conductive Atomic Force Microscopy

2015 ◽  
Vol 2015 ◽  
pp. 1-6 ◽  
Author(s):  
Oleg Gorshkov ◽  
Dmitry Filatov ◽  
Dmitry Antonov ◽  
Ivan Antonov
Keyword(s):  
Atomic Force Microscopy ◽  
Resistive Switching ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Oscillation Loop ◽  
In Series

The effect of resistive switching in the yttria stabilized zirconia (YSZ) thin films on Si substrates has been studied by Conductive Atomic Force Microscopy (CAFM). The resistive switching of the YSZ films from the low conductive state to the highly conductive one has been found to be associated with the increasing of the noise with broad frequency spectrum related to the redistribution of the oxygen vacancies in YSZ. The electrical oscillations in oscillation loop connected in series to the CAFM probe, the sample, and the bias source related to the excitation of the oscillation loop by the noise in the probe-to-sample contact film have been observed. The effect discovered is promising for application in the memristor devices of new generation.

scholarly journals Conductive Atomic Force Microscopy Study of the Resistive Switching in Yttria-Stabilized Zirconia Films with Au Nanoparticles

Scanning ◽  
2018 ◽  
Vol 2018 ◽  
pp. 1-9 ◽  
Author(s):  
Dmitry Filatov ◽  
Inga Kazantseva ◽  
Dmitry Antonov ◽  
Ivan Antonov ◽  
Maria Shenina ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Resistive Switching ◽  
Au Nanoparticles ◽  
Film Surface ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Conductive Atomic Force Microscopy ◽  
Au Nps ◽  
Force Microscopy ◽  
Atomic Force

We report on the investigation of the resistive switching (RS) in the ultrathin (≈5 nm in thickness) yttria-stabilized zirconia (YSZ) films with single layers of Au nanoparticles (NPs) by conductive atomic force microscopy (CAFM). Besides the butterfly-type hysteresis loops in the current-voltage (I-V) curves of the contact of the CAFM probe to the investigated film surface corresponding to the bipolar RS, the negative differential resistance (NDR) has been observed in the I-V curves of the AFM probe contact to the YSZ films with Au NPs in the conductive (“ON”) state. The NDR has been related to the resonant tunneling of electrons through the size-quantized energy states in the ultrafine (1 to 2 nm in diameter) Au NPs built in the conductive filaments in the YSZ films.

scholarly journals Development of in-situ high-voltage and high-temperature stressing capability on atomic force microscopy platform

Solar Energy ◽  
2017 ◽  
Vol 158 ◽  
pp. 746-752 ◽  
Author(s):  
Chuanxiao Xiao ◽  
Chun-Sheng Jiang ◽  
Steve Johnston ◽  
Xiaowu Yang ◽  
Jichun Ye ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
High Temperature ◽  
High Voltage ◽  
Force Microscopy ◽  
Atomic Force

Atomic force microscopy of in situ deformed nickel thin films

1999 ◽  
Vol 353 (1-2) ◽  
pp. 194-200 ◽  
Author(s):  
C. Coupeau ◽  
J.F. Naud ◽  
F. Cleymand ◽  
P. Goudeau ◽  
J. Grilhé
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Force Microscopy ◽  
Nickel Thin Films ◽  
Atomic Force
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