scholarly journals Direct correlation of R-line luminescence with rod-like defect evolution in ion-implanted and annealed silicon

2012 ◽  
Vol 2 (3) ◽  
pp. 101-105 ◽  
Author(s):  
S. Charnvanichborikarn ◽  
J. Wong-Leung ◽  
C. Jagadish ◽  
J.S. Williams
Keyword(s):  
Defect Evolution ◽  
Image Position ◽  
Ion Implanted

Abstract

Defects in ion implanted silicon

1978 ◽  
Vol 36 (1) ◽  
pp. 386-387
Author(s):  
J.A. Lambert ◽  
P.S. Dobson
Keyword(s):  
Defect Structure ◽  
Dislocation Loops ◽  
Frank Loop ◽  
Burgers Vector ◽  
Temperature Range ◽  
Perfect Dislocation ◽  
Contrast Analysis ◽  
Image Position ◽  
Ion Implanted

The defect structure of ion-implanted silicon, which has been annealed in the temperature range 800°C-1100°C, consists of extrinsic Frank faulted loops and perfect dislocation loops, together with‘rod like’ defects elongated along <110> directions. Various structures have been suggested for the elongated defects and it was argued that an extrinsically faulted Frank loop could undergo partial shear to yield an intrinsically faulted defect having a Burgers vector of 1/6 <411>.This defect has been observed in boron implanted silicon (1015 B+ cm-2 40KeV) and a detailed contrast analysis has confirmed the proposed structure.

Anomalous Transient Diffusion of Ion Implanted Boron during Rapid Thermal Annealing

1989 ◽  
Vol 146 ◽  
Author(s):  
Y. M. Kim ◽  
G. Q. Lo ◽  
D. L. Kwong ◽  
H. H. Tseng ◽  
R. Hance
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Anomalous Diffusion ◽  
Low Dose ◽  
Silicon Wafers ◽  
Silicon Ions ◽  
Defect Evolution ◽  
Boron Implantation ◽  
Silicon Implantation ◽  
Ion Implanted

ABSTRACTEffects of defect evolution during rapid thermal annealing (RTA) on the anomalous diffusion of ion implanted boron have been studied by implanting silicon ions prior to boron implantation with doses ranging from 1 × 1014cm−2 to 1 × 1016cm−2 at energies ranging from 20 to 150 KeV into silicon wafers. Diffusion of boron atoms implanted into a Si preamorphized layer during RTA is found to be anomalous in nature, and the magnitude of boron displacement depends on the RTA temperature. While RTA of preamorphized samples at 1150°C shows an enhanced boron displacement compared to that in crystalline samples, a reduced displacement is observed in preamorphized samples annealed by RTA at 1000°C. In addition, low dose pre-silicon implantation enhances the anomalous displacement significantly, especially at high RTA temperatures (1 150°C). Finally, the anomalous diffusion is found to depend strongly on the defect evolution during RTA.

Modeling of extrinsic extended defect evolution in ion-implanted silicon upon thermal annealing

2004 ◽  
Vol 114-115 ◽  
pp. 184-192 ◽  
Author(s):  
C.J. Ortiz ◽  
F. Cristiano ◽  
B. Colombeau ◽  
A. Claverie ◽  
N.E.B. Cowern
Keyword(s):  
Thermal Annealing ◽  
Extended Defect ◽  
Defect Evolution ◽  
Ion Implanted

The effect of impurity content on point defect evolution in ion implanted and electron irradiated Si

1997 ◽  
Vol 70 (22) ◽  
pp. 3002-3004 ◽  
Author(s):  
S. Libertino ◽  
J. L. Benton ◽  
D. C. Jacobson ◽  
D. J. Eaglesham ◽  
J. M. Poate ◽  
...  
Keyword(s):  
Point Defect ◽  
Impurity Content ◽  
Defect Evolution ◽  
Ion Implanted

Secondary defect evolution in ion‐implanted silicon

1990 ◽  
Vol 68 (10) ◽  
pp. 5081-5089 ◽  
Author(s):  
P. I. Gaiduk ◽  
A. Nylandsted Larsen
Keyword(s):  
Defect Evolution ◽  
Secondary Defect ◽  
Ion Implanted

scholarly journals Influence of chemical disorder on energy dissipation and defect evolution in advanced alloys

2016 ◽  
Vol 31 (16) ◽  
pp. 2363-2375 ◽  
Author(s):  
Yanwen Zhang ◽  
Ke Jin ◽  
Haizhou Xue ◽  
Chenyang Lu ◽  
Raina J. Olsen ◽  
...  
Keyword(s):  
Energy Dissipation ◽  
Chemical Disorder ◽  
Defect Evolution ◽  
Image Position

Abstract

Defect evolution in MeV ion-implanted silicon

1996 ◽  
Vol 120 (1-4) ◽  
pp. 27-32 ◽  
Author(s):  
J. Lalita ◽  
N. Keskitalo ◽  
A. Hallén ◽  
C. Jagadish ◽  
B.G. Svensson
Keyword(s):  
Defect Evolution ◽  
Ion Implanted

{311} defect evolution in ion-implanted, relaxed Si[sub 1−x]Ge[sub x]

2004 ◽  
Vol 22 (1) ◽  
pp. 468 ◽  
Author(s):  
Robert Crosby ◽  
K. S. Jones ◽  
M. E. Law ◽  
A. Nylandsted Larsen ◽  
J. Lundsgaard Hansen
Keyword(s):  
Defect Evolution ◽  
Ion Implanted
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