Secondary defect evolution in ion‐implanted silicon

1990 ◽  
Vol 68 (10) ◽  
pp. 5081-5089 ◽  
Author(s):  
P. I. Gaiduk ◽  
A. Nylandsted Larsen
Keyword(s):  
Defect Evolution ◽  
Secondary Defect ◽  
Ion Implanted

Anomalous Transient Diffusion of Ion Implanted Boron during Rapid Thermal Annealing

1989 ◽  
Vol 146 ◽  
Author(s):  
Y. M. Kim ◽  
G. Q. Lo ◽  
D. L. Kwong ◽  
H. H. Tseng ◽  
R. Hance
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Anomalous Diffusion ◽  
Low Dose ◽  
Silicon Wafers ◽  
Silicon Ions ◽  
Defect Evolution ◽  
Boron Implantation ◽  
Silicon Implantation ◽  
Ion Implanted

ABSTRACTEffects of defect evolution during rapid thermal annealing (RTA) on the anomalous diffusion of ion implanted boron have been studied by implanting silicon ions prior to boron implantation with doses ranging from 1 × 1014cm−2 to 1 × 1016cm−2 at energies ranging from 20 to 150 KeV into silicon wafers. Diffusion of boron atoms implanted into a Si preamorphized layer during RTA is found to be anomalous in nature, and the magnitude of boron displacement depends on the RTA temperature. While RTA of preamorphized samples at 1150°C shows an enhanced boron displacement compared to that in crystalline samples, a reduced displacement is observed in preamorphized samples annealed by RTA at 1000°C. In addition, low dose pre-silicon implantation enhances the anomalous displacement significantly, especially at high RTA temperatures (1 150°C). Finally, the anomalous diffusion is found to depend strongly on the defect evolution during RTA.

Modeling of extrinsic extended defect evolution in ion-implanted silicon upon thermal annealing

2004 ◽  
Vol 114-115 ◽  
pp. 184-192 ◽  
Author(s):  
C.J. Ortiz ◽  
F. Cristiano ◽  
B. Colombeau ◽  
A. Claverie ◽  
N.E.B. Cowern
Keyword(s):  
Thermal Annealing ◽  
Extended Defect ◽  
Defect Evolution ◽  
Ion Implanted

The effect of impurity content on point defect evolution in ion implanted and electron irradiated Si

1997 ◽  
Vol 70 (22) ◽  
pp. 3002-3004 ◽  
Author(s):  
S. Libertino ◽  
J. L. Benton ◽  
D. C. Jacobson ◽  
D. J. Eaglesham ◽  
J. M. Poate ◽  
...  
Keyword(s):  
Point Defect ◽  
Impurity Content ◽  
Defect Evolution ◽  
Ion Implanted

The Kinetics of Damage Removal Metastable Carrier Concentration Relaxation and Secondary Defect Evolution During RTA

1988 ◽  
Vol 100 ◽  
Author(s):  
Xu Ii ◽  
Tsien Peihsin ◽  
Li Zhljan
Keyword(s):  
Critical Temperature ◽  
Carrier Concentration ◽  
Annealing Temperature ◽  
Activation Energies ◽  
Time Duration ◽  
Defect Evolution ◽  
Secondary Defect ◽  
Kinetics Of

ABSTRACTThe kinetics of damage removal, metastable carrier concentration relaxation and secondary defect evolution in As+-implanted and rapidly annealed silicon was studied m detail. It was found that these processes are characterized by different activation energies. There is a critical temperature Tc for RTA. Only when the annealing temperature is higher than Tc, with suitable time duration can the RTA advantages be fully exloited.

Defect evolution in MeV ion-implanted silicon

1996 ◽  
Vol 120 (1-4) ◽  
pp. 27-32 ◽  
Author(s):  
J. Lalita ◽  
N. Keskitalo ◽  
A. Hallén ◽  
C. Jagadish ◽  
B.G. Svensson
Keyword(s):  
Defect Evolution ◽  
Ion Implanted

scholarly journals Direct correlation of R-line luminescence with rod-like defect evolution in ion-implanted and annealed silicon

2012 ◽  
Vol 2 (3) ◽  
pp. 101-105 ◽  
Author(s):  
S. Charnvanichborikarn ◽  
J. Wong-Leung ◽  
C. Jagadish ◽  
J.S. Williams
Keyword(s):  
Defect Evolution ◽  
Image Position ◽  
Ion Implanted

Abstract

Reduction of secondary defect formation in MeV As ion implanted Si(100)

1991 ◽  
Vol 59-60 ◽  
pp. 614-618 ◽  
Author(s):  
R.J. Schreutelkamp ◽  
W.X. Lu ◽  
J.R. Liefting ◽  
V. Raineri ◽  
J.S. Custer ◽  
...  
Keyword(s):  
Defect Formation ◽  
Secondary Defect ◽  
Ion Implanted
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