{311} defect evolution in ion-implanted, relaxed Si[sub 1−x]Ge[sub x]

2004 ◽  
Vol 22 (1) ◽  
pp. 468 ◽  
Author(s):  
Robert Crosby ◽  
K. S. Jones ◽  
M. E. Law ◽  
A. Nylandsted Larsen ◽  
J. Lundsgaard Hansen
Keyword(s):  
Defect Evolution ◽  
Ion Implanted

Anomalous Transient Diffusion of Ion Implanted Boron during Rapid Thermal Annealing

1989 ◽  
Vol 146 ◽  
Author(s):  
Y. M. Kim ◽  
G. Q. Lo ◽  
D. L. Kwong ◽  
H. H. Tseng ◽  
R. Hance
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Anomalous Diffusion ◽  
Low Dose ◽  
Silicon Wafers ◽  
Silicon Ions ◽  
Defect Evolution ◽  
Boron Implantation ◽  
Silicon Implantation ◽  
Ion Implanted

ABSTRACTEffects of defect evolution during rapid thermal annealing (RTA) on the anomalous diffusion of ion implanted boron have been studied by implanting silicon ions prior to boron implantation with doses ranging from 1 × 1014cm−2 to 1 × 1016cm−2 at energies ranging from 20 to 150 KeV into silicon wafers. Diffusion of boron atoms implanted into a Si preamorphized layer during RTA is found to be anomalous in nature, and the magnitude of boron displacement depends on the RTA temperature. While RTA of preamorphized samples at 1150°C shows an enhanced boron displacement compared to that in crystalline samples, a reduced displacement is observed in preamorphized samples annealed by RTA at 1000°C. In addition, low dose pre-silicon implantation enhances the anomalous displacement significantly, especially at high RTA temperatures (1 150°C). Finally, the anomalous diffusion is found to depend strongly on the defect evolution during RTA.

Modeling of extrinsic extended defect evolution in ion-implanted silicon upon thermal annealing

2004 ◽  
Vol 114-115 ◽  
pp. 184-192 ◽  
Author(s):  
C.J. Ortiz ◽  
F. Cristiano ◽  
B. Colombeau ◽  
A. Claverie ◽  
N.E.B. Cowern
Keyword(s):  
Thermal Annealing ◽  
Extended Defect ◽  
Defect Evolution ◽  
Ion Implanted

The effect of impurity content on point defect evolution in ion implanted and electron irradiated Si

1997 ◽  
Vol 70 (22) ◽  
pp. 3002-3004 ◽  
Author(s):  
S. Libertino ◽  
J. L. Benton ◽  
D. C. Jacobson ◽  
D. J. Eaglesham ◽  
J. M. Poate ◽  
...  
Keyword(s):  
Point Defect ◽  
Impurity Content ◽  
Defect Evolution ◽  
Ion Implanted

Secondary defect evolution in ion‐implanted silicon

1990 ◽  
Vol 68 (10) ◽  
pp. 5081-5089 ◽  
Author(s):  
P. I. Gaiduk ◽  
A. Nylandsted Larsen
Keyword(s):  
Defect Evolution ◽  
Secondary Defect ◽  
Ion Implanted

Defect evolution in MeV ion-implanted silicon

1996 ◽  
Vol 120 (1-4) ◽  
pp. 27-32 ◽  
Author(s):  
J. Lalita ◽  
N. Keskitalo ◽  
A. Hallén ◽  
C. Jagadish ◽  
B.G. Svensson
Keyword(s):  
Defect Evolution ◽  
Ion Implanted

scholarly journals Direct correlation of R-line luminescence with rod-like defect evolution in ion-implanted and annealed silicon

2012 ◽  
Vol 2 (3) ◽  
pp. 101-105 ◽  
Author(s):  
S. Charnvanichborikarn ◽  
J. Wong-Leung ◽  
C. Jagadish ◽  
J.S. Williams
Keyword(s):  
Defect Evolution ◽  
Image Position ◽  
Ion Implanted

Abstract

Defect Evolution in Ion Implanted Si: from Point to Extended Defects

1997 ◽  
Vol 504 ◽  
Author(s):  
Sebania Libertino ◽  
Janet L. Benton ◽  
Salvatore Coffa ◽  
Dave J. Eaglesham
Keyword(s):  
Point Defect ◽  
Room Temperature ◽  
Deep Level ◽  
Extended Defects ◽  
Defect Structures ◽  
Annealing Behavior ◽  
Defect Complexes ◽  
Annealing Temperatures ◽  
Defect Evolution ◽  
Ion Implanted

ABSTRACTSeveral recent experiments assessing the role of impurities (C, O), dopants (P, B) and clustering on defect evolution in ion implanted Si are reviewed. Deep level transient spectroscopy measurements were used to analyze the defect structure in a wide range of ion implantation fluences (1×108–5×1013 cm−2) and annealing temperatures (100–800 °C). By using substrates with a different impurity content and comparing ion implanted and electron irradiated Si samples, many interesting features of defect evolution in Si have been elucidated. It is found that only a small percentage, 4–16 % depending on ion mass, of the Frenkel pairs generated by the beam escape direct recombination and is stored into an equal number of room temperature stable vacancy- (V-) and interstitial-type (I-) defect complexes. Identical defect structures and annealing behavior have been measured in ion implanted (1.2 MeV Si, 1×108–1×1010/cm2) and electron irradiated (9.2 MeV to fluences between 1 and 3×1015/cm2) samples in spite of the fact that denser collision cascades are produced by the ions. The O and C content of the substrate plays a major role in determining the point defect migration, the room temperature stable defect structures and their annealing behavior. Annealing at temperatures up to 300 °C produces a concomitant reduction of the I- and V-type defect complexes concentration, demonstrating that defect annihilation occurs preferentially in the bulk. At temperatures above 300 °C, when all V-type complexes have been annealed out, ion implanted samples present a residual I-type damage, storing 2–3 I per implanted ion. This unbalance is not observed in electron irradiated samples and it is a direct consequence of the extra implanted ion. The simple point defect structures produced at low ion fluence (1×108–1×1011 /cm2) anneal at ∼ 550 °C. At higher fluences (∼ 1012–1013/cm2) and for annealing temperatures above 500 °C the deep level spectrum is dominated by two signatures at Ev+0.33 eV and at Ev+0.52 eV that we have associated to Si interstitial clusters. Impurities (C, O and B) play a role in determining nucleation kinetics of these defects, but they are not their main constituents. The dissolution temperature of these clusters indicates that they might store the interstitials that drive transient enhanced diffusion phenomena occurring in the absence of extended defects. Finally, at higher implantation fluence, a signature of extended defects is observed and associated to the presence of {311} defects detected by transmission electron microscopy analyses.

Electron Diffraction Analysis of Microtwin Structures in Regrown (III) Silicon

1982 ◽  
Vol 40 ◽  
pp. 460-461
Author(s):  
P. Ling ◽  
R. Gronsky ◽  
J. Washburn
Keyword(s):  
Electron Diffraction ◽  
Ion Implantation ◽  
Diffraction Analysis ◽  
Diffraction Pattern ◽  
Direct Consequence ◽  
The Other ◽  
Electron Diffraction Analysis ◽  
Defect Microstructures ◽  
Ion Implanted

The defect microstructures of Si arising from ion implantation and subsequent regrowth for a (111) substrate have been found to be dominated by microtwins. Figure 1(a) is a typical diffraction pattern of annealed ion-implanted (111) Si showing two groups of extra diffraction spots; one at positions (m, n integers), the other at adjacent positions between <000> and <220>. The object of the present paper is to show that these extra reflections are a direct consequence of the microtwins in the material.

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