Optical and chemical properties of polyterpenol thin films deposited via plasma-enhanced chemical vapor deposition

2011 ◽  
Vol 26 (8) ◽  
pp. 1018-1025 ◽  
Author(s):  
Kateryna Bazaka ◽  
Mohan V. Jacob ◽  
Bruce F. Bowden
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Properties ◽  
Chemical Vapor ◽  
Image Position ◽  
And Chemical Properties

Abstract

scholarly journals Transport characteristics of type II Weyl semimetal MoTe2 thin films grown by chemical vapor deposition

2019 ◽  
Vol 35 (5) ◽  
pp. 454-461
Author(s):  
Niraj Bhattarai ◽  
Andrew W. Forbes ◽  
Rajendra P. Dulal ◽  
Ian L. Pegg ◽  
John Philip
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Type Ii ◽  
Weyl Semimetal ◽  
Image Position

Abstract

Chemical Vapor Deposition of Boron Phosphide Thin Films

2012 ◽  
Vol 1432 ◽  
Author(s):  
Julia K.C. Abbott ◽  
J. Daniel Brasfield ◽  
Philip D. Rack ◽  
Gerd J. Duscher ◽  
Charles S. Feigerle
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Hydrogen Gas ◽  
Electron Hole ◽  
Boron Phosphide ◽  
Image Position

ABSTRACTBoron Phosphide (BP) is a promising material for use as a room temperature semiconductor detector of thermal neutrons. The absorption of a thermal neutron by a 10B nucleus in BP can yield 2.3MeV of energy which in solid state BP can yield ∼0.5 million electron-hole pairs that would be detectable with minimal amplification in a device. BP thin films are grown according to the net reaction below in a cold wall chemical vapor deposition (CVD) reactor: Thin film depositions are performed using diborane and phosphine with a balance of hydrogen gas at near atmospheric pressure with RF induction heating. The resultant BP films are characterized by Raman, XRD, SEM, TEM and TEM-EELS for chemical composition, surface and bulk morphology. BP growths on Si and SiC substrates are compared. SiC provides reduced lattice mismatch for growth of BP and growth of heteroepitaxial BP on SiC will be discussed.

Fabrication of nickel and nickel carbide thin films by pulsed chemical vapor deposition

2018 ◽  
Vol 8 (01) ◽  
pp. 88-94 ◽  
Author(s):  
Qun Guo ◽  
Zheng Guo ◽  
Jianmin Shi ◽  
Lijun Sang ◽  
Bo Gao ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nickel Carbide ◽  
Image Position

Abstract

scholarly journals Growth of single-crystalline cubic structured tin(ii) sulfide (SnS) nanowires by chemical vapor deposition

RSC Advances ◽  
2017 ◽  
Vol 7 (66) ◽  
pp. 41452-41459 ◽  
Author(s):  
Devika Mudusu ◽  
Koteeswara Reddy Nandanapalli ◽  
Sreekantha Reddy Dugasani ◽  
Jang Won Kang ◽  
Sung Ha Park ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Chemical Properties ◽  
Chemical Vapor ◽  
Physical And Chemical Properties ◽  
Effect Transistor ◽  
Physical And Chemical ◽  
And Chemical Properties

SnS nanowires with high aspect-ratio were developed by chemical vapor deposition and their physical and chemical properties were explored, along with their field effect transistor characteristics.

High Band Gap Nanocrystalline Tungsten Carbide (nc-WC) Thin Films Grown by Hot Wire Chemical Vapor Deposition (HW-CVD) Method

2018 ◽  
Vol 10 (3) ◽  
pp. 03001-1-03001-6 ◽  
Author(s):  
Bharat Gabhale ◽  
◽  
Ashok Jadhawar ◽  
Ajinkya Bhorde ◽  
Shruthi Nair ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Tungsten Carbide ◽  
Band Gap ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Cvd Method ◽  
High Band

NITROGEN INCORPORATED HYDROGENATED AMORPHOUS CARBON THIN FILMS DEPOSITED BY MICROWAVE SURFACE-WAVE PLASMA CHEMICAL VAPOR DEPOSITION

2009 ◽  
Vol 23 (09) ◽  
pp. 2159-2165 ◽  
Author(s):  
SUDIP ADHIKARI ◽  
MASAYOSHI UMENO
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Surface Wave ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Hydrogenated Amorphous Carbon ◽  
Plasma Chemical Vapor Deposition ◽  
Hydrogenated Amorphous

Nitrogen incorporated hydrogenated amorphous carbon (a-C:N:H) thin films have been deposited by microwave surface-wave plasma chemical vapor deposition on silicon and quartz substrates, using helium, methane and nitrogen ( N 2) as plasma source. The deposited a-C:N:H films were characterized by their optical, structural and electrical properties through UV/VIS/NIR spectroscopy, Raman spectroscopy, atomic force microscope and current-voltage characteristics. The optical band gap decreased gently from 3.0 eV to 2.5 eV with increasing N 2 concentration in the films. The a-C:N:H film shows significantly higher electrical conductivity compared to that of N 2-free a-C:H film.

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