scholarly journals Transport characteristics of type II Weyl semimetal MoTe2 thin films grown by chemical vapor deposition

2019 ◽  
Vol 35 (5) ◽  
pp. 454-461
Author(s):  
Niraj Bhattarai ◽  
Andrew W. Forbes ◽  
Rajendra P. Dulal ◽  
Ian L. Pegg ◽  
John Philip

Abstract

2012 ◽  
Vol 1432 ◽  
Author(s):  
Julia K.C. Abbott ◽  
J. Daniel Brasfield ◽  
Philip D. Rack ◽  
Gerd J. Duscher ◽  
Charles S. Feigerle

ABSTRACTBoron Phosphide (BP) is a promising material for use as a room temperature semiconductor detector of thermal neutrons. The absorption of a thermal neutron by a 10B nucleus in BP can yield 2.3MeV of energy which in solid state BP can yield ∼0.5 million electron-hole pairs that would be detectable with minimal amplification in a device. BP thin films are grown according to the net reaction below in a cold wall chemical vapor deposition (CVD) reactor: Thin film depositions are performed using diborane and phosphine with a balance of hydrogen gas at near atmospheric pressure with RF induction heating. The resultant BP films are characterized by Raman, XRD, SEM, TEM and TEM-EELS for chemical composition, surface and bulk morphology. BP growths on Si and SiC substrates are compared. SiC provides reduced lattice mismatch for growth of BP and growth of heteroepitaxial BP on SiC will be discussed.


2018 ◽  
Vol 8 (01) ◽  
pp. 88-94 ◽  
Author(s):  
Qun Guo ◽  
Zheng Guo ◽  
Jianmin Shi ◽  
Lijun Sang ◽  
Bo Gao ◽  
...  

Abstract


2018 ◽  
Vol 10 (3) ◽  
pp. 03001-1-03001-6 ◽  
Author(s):  
Bharat Gabhale ◽  
◽  
Ashok Jadhawar ◽  
Ajinkya Bhorde ◽  
Shruthi Nair ◽  
...  

2009 ◽  
Vol 23 (09) ◽  
pp. 2159-2165 ◽  
Author(s):  
SUDIP ADHIKARI ◽  
MASAYOSHI UMENO

Nitrogen incorporated hydrogenated amorphous carbon (a-C:N:H) thin films have been deposited by microwave surface-wave plasma chemical vapor deposition on silicon and quartz substrates, using helium, methane and nitrogen ( N 2) as plasma source. The deposited a-C:N:H films were characterized by their optical, structural and electrical properties through UV/VIS/NIR spectroscopy, Raman spectroscopy, atomic force microscope and current-voltage characteristics. The optical band gap decreased gently from 3.0 eV to 2.5 eV with increasing N 2 concentration in the films. The a-C:N:H film shows significantly higher electrical conductivity compared to that of N 2-free a-C:H film.


2017 ◽  
Vol 19 (8) ◽  
pp. 1700193 ◽  
Author(s):  
Mattias Vervaele ◽  
Bert De Roo ◽  
Jolien Debehets ◽  
Marilyne Sousa ◽  
Luman Zhang ◽  
...  

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