Effects of process variables on properties and composition of a-Si:C:H films

2003 ◽  
Vol 18 (1) ◽  
pp. 129-138
Author(s):  
I. L. Moskowitz ◽  
W. A. Lanford ◽  
S. V. Babu
Keyword(s):  
Experimental Design ◽  
Physical Properties ◽  
Vapor Deposition ◽  
Optical Constants ◽  
Plasma Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Process Variables ◽  
Factorial Experimental Design ◽  
Deposition Parameters

Physical properties of a-Si:C:H films, including composition, optical constants, microhardness, and surface energy, were investigated. A factorial experimental design was employed to establish the effects of plasma-assisted chemical vapor deposition parameters on the physical properties of the films. The dynamics of the plasma deposition process are discussed in relation to the interactions observed among the process variables and the effects of the variables on the physical properties of the films.

The Chemical Vapor Deposition of Dispersed Phase Composites in the B-Si-C-H-Cl-Ar System

1994 ◽  
Vol 363 ◽  
Author(s):  
T. S. Moss ◽  
W. J. Lackey ◽  
G. B. Freeman
Keyword(s):  
Experimental Design ◽  
Vapor Deposition ◽  
Multivariate Regression ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Response Surfaces ◽  
Dispersed Phase ◽  
Designed Experiment ◽  
Cell Volumes ◽  
Central Composite

AbstractThe CVD of the coatings in the B-Si-C-H-C1-Ar system was accomplished using a statistically designed experiment. The experimental design used five factor half-fraction factorial with a central composite design that was both rotatable and orthogonal. Deposits were thick and dense and were composed of B13C2 and β-SiC with compositions ranging from 0 to 100%. Response surfaces were generated using multivariate regression for unit cell volumes of B13C2 and β-SiC, %B13C2/%SiC in the coating, and the Si to B ratio in the deposit. These equations could then be used to examine the significant variables in the reaction, as well as for tailoring and optimizing the deposition process.

Crystallographic Texture and Phase Formation in Blanket TifriN/AICu Films

1998 ◽  
Vol 514 ◽  
Author(s):  
P. W. DeHaven ◽  
L. A. Clevenger ◽  
R. F. Schnabe ◽  
S. J. Weber ◽  
R. C. Iggulden ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Alloy Film ◽  
Al Alloy ◽  
Area Detector ◽  
Deposition Parameters ◽  
Temperature Deposition ◽  
20 Nm

ABSTRACTInterconnection metallization uses film stacks, often composed of thin (<10 nm) Ti, TiN, or Ti/TiN underlayer(s) with a thick (200–1000 nm) Al-alloy film deposited on top. The texture or preferred orientation in such film stacks has important implications for both processing and reliability. Earlier studies' have demonstrated the importance of the underlayers on Al texture; however, to date no systematic work has been done on the effect of processing conditions on underlayer texture. This study examines the effect of deposition parameters on the underlayer texture development as well as the effect of this underlayer texture on subsequently deposited Al-alloy films. Fiber plots were obtained for Ti <002> and <101> and Al <111> reflections for a series of 20 nm Ti/ 10 nm TiN/400 nm AlCu films using both a conventional Siemens D500 diffractometer with a pole figure attachment and a Siemens HI-STAR Area Detector system using Cu radiation from a rotating anode source. Because of overlap between the Al <111> and Ti <101> reflections, the Al was removed with a subtractive etch. In this way both the Al and underlayer film textures could be quantified. It was found that the Ti and Al-alloy film textures vary depending on the deposition temperature, deposition method and final film thickness. For example, an increase in the substrate temperature from 300° to 500°C caused the Ti film texture to change from <002> to <101>. Additionally, switching the TiN deposition process from physical vapor deposition (PVD) sputtering to chemical vapor deposition (CVD) in a Ti/TiN/AlCu film stack caused a degradation in the AlCu <111 > texture.

Reaction couples of ceramic thin films prepared by CVD

1988 ◽  
Vol 46 ◽  
pp. 798-799
Author(s):  
D.W. Susnitzky ◽  
S.R. Summerfelt ◽  
C.B. Carter
Keyword(s):  
Thin Film ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Solid State Reactions ◽  
Spatial Distributions ◽  
Diffusion Couples ◽  
Kinetics Studies ◽  
Ceramic Thin Films ◽  
Initial Stage

Solid-state reactions have traditionally been studied in the form of diffusion couples. This ‘bulk’ approach has been modified, for the specific case of the reaction between NiO and Al2O3, by growing NiAl2O4 (spinel) from electron-transparent Al2O3 TEM foils which had been exposed to NiO vapor at 1415°C. This latter ‘thin-film’ approach has been used to characterize the initial stage of spinel formation and to produce clean phase boundaries since further TEM preparation is not required after the reaction is completed. The present study demonstrates that chemical-vapor deposition (CVD) can be used to deposit NiO particles, with controlled size and spatial distributions, onto Al2O3 TEM specimens. Chemical reactions do not occur during the deposition process, since CVD is a relatively low-temperature technique, and thus the NiO-Al2O3 interface can be characterized. Moreover, a series of annealing treatments can be performed on the same sample which allows both Ni0-NiAl2O4 and NiAl2O4-Al2O3 interfaces to be characterized and which therefore makes this technique amenable to kinetics studies of thin-film reactions.

scholarly journals Study of deposition parameters and growth kinetics of ZnO deposited by aerosol assisted chemical vapor deposition

RSC Advances ◽  
2021 ◽  
Vol 11 (30) ◽  
pp. 18493-18499
Author(s):  
Sergio Sánchez-Martín ◽  
S. M. Olaizola ◽  
E. Castaño ◽  
E. Urionabarrenetxea ◽  
G. G. Mandayo ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Kinetics ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Kinetics Analysis ◽  
Deposition Parameters ◽  
Kinetics Of

Impact of deposition parameters, microstructure and growth kinetics analysis of ZnO grown by Aerosol-assisted Chemical Vapor Deposition (AACVD).

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