The Chemical Vapor Deposition of Dispersed Phase Composites in the B-Si-C-H-Cl-Ar System

1994 ◽  
Vol 363 ◽  
Author(s):  
T. S. Moss ◽  
W. J. Lackey ◽  
G. B. Freeman
Keyword(s):  
Experimental Design ◽  
Vapor Deposition ◽  
Multivariate Regression ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Response Surfaces ◽  
Dispersed Phase ◽  
Designed Experiment ◽  
Cell Volumes ◽  
Central Composite

AbstractThe CVD of the coatings in the B-Si-C-H-C1-Ar system was accomplished using a statistically designed experiment. The experimental design used five factor half-fraction factorial with a central composite design that was both rotatable and orthogonal. Deposits were thick and dense and were composed of B13C2 and β-SiC with compositions ranging from 0 to 100%. Response surfaces were generated using multivariate regression for unit cell volumes of B13C2 and β-SiC, %B13C2/%SiC in the coating, and the Si to B ratio in the deposit. These equations could then be used to examine the significant variables in the reaction, as well as for tailoring and optimizing the deposition process.

Effects of process variables on properties and composition of a-Si:C:H films

2003 ◽  
Vol 18 (1) ◽  
pp. 129-138
Author(s):  
I. L. Moskowitz ◽  
W. A. Lanford ◽  
S. V. Babu
Keyword(s):  
Experimental Design ◽  
Physical Properties ◽  
Vapor Deposition ◽  
Optical Constants ◽  
Plasma Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Process Variables ◽  
Factorial Experimental Design ◽  
Deposition Parameters

Physical properties of a-Si:C:H films, including composition, optical constants, microhardness, and surface energy, were investigated. A factorial experimental design was employed to establish the effects of plasma-assisted chemical vapor deposition parameters on the physical properties of the films. The dynamics of the plasma deposition process are discussed in relation to the interactions observed among the process variables and the effects of the variables on the physical properties of the films.

Reaction couples of ceramic thin films prepared by CVD

1988 ◽  
Vol 46 ◽  
pp. 798-799
Author(s):  
D.W. Susnitzky ◽  
S.R. Summerfelt ◽  
C.B. Carter
Keyword(s):  
Thin Film ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Solid State Reactions ◽  
Spatial Distributions ◽  
Diffusion Couples ◽  
Kinetics Studies ◽  
Ceramic Thin Films ◽  
Initial Stage

Solid-state reactions have traditionally been studied in the form of diffusion couples. This ‘bulk’ approach has been modified, for the specific case of the reaction between NiO and Al2O3, by growing NiAl2O4 (spinel) from electron-transparent Al2O3 TEM foils which had been exposed to NiO vapor at 1415°C. This latter ‘thin-film’ approach has been used to characterize the initial stage of spinel formation and to produce clean phase boundaries since further TEM preparation is not required after the reaction is completed. The present study demonstrates that chemical-vapor deposition (CVD) can be used to deposit NiO particles, with controlled size and spatial distributions, onto Al2O3 TEM specimens. Chemical reactions do not occur during the deposition process, since CVD is a relatively low-temperature technique, and thus the NiO-Al2O3 interface can be characterized. Moreover, a series of annealing treatments can be performed on the same sample which allows both Ni0-NiAl2O4 and NiAl2O4-Al2O3 interfaces to be characterized and which therefore makes this technique amenable to kinetics studies of thin-film reactions.

Chemical Vapor Deposition of Sr1−xBaxNb2O6 Thin Films Using Metal Alkoxide Precursors

2000 ◽  
Vol 15 (8) ◽  
pp. 1702-1708
Author(s):  
Ruichao Zhang ◽  
Ren Xu
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Single Phase ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Thin Layers ◽  
Metal Alkoxide ◽  
Stoichiometry Control ◽  
Alkoxide Precursors

A novel two-step metalorganic chemical vapor deposition process was used in this study to prepare Sr1−xBaxNb2O6 (SBN) thin films. Two thin layers of single-phase SrNb2O6 and BaNb2O6 were deposited alternately on a silicon substrate, and the solid solution of SBN was obtained by high-temperature annealing. The stoichiometry control of the SrNb2O6 and the BaNb2O6 thin films was achieved through deposition process control, according to the evaporation characteristics of double metal alkoxide. The evaporation behavior of double metal alkoxide precursors SrNb2(1-OC4H9)12 and BaNb2(1-OC4H9)12 was studied, and the results were compared with the evaporation of single alkoxide Nb(1-OC4H9)5.

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