Correlation of resistance and interfacial reaction of contacts to n-type InP

2002 ◽  
Vol 17 (11) ◽  
pp. 2929-2934 ◽  
Author(s):  
J. S. Huang ◽  
C. B. Vartuli ◽  
T. Nguyen ◽  
N. Bar-Chaim ◽  
J. Shearer ◽  
...  
Keyword(s):  
Interfacial Reaction ◽  
Electron Spectroscopy ◽  
Scanning Transmission Electron Microscopy ◽  
Auger Electron ◽  
Compound Semiconductors ◽  
Metal Contact ◽  
Chemical Information ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Metallic Compounds

Metal contact of compound semiconductors has been extensively studied using various characterization tools. However, there was little work of scanning transmission electron microscopy (STEM) done previously for the study of the InP contact systems. Using STEM and Auger electron spectroscopy analyses, we correlated the resistance with interfacial reactions in the AuGe/Ni/Au/Cr/Au contacts to n-InP. Detailed nanoscale structural and chemical information was uniquely revealed by the STEM compared to other techniques. For the high-resistance samples, little interfacial reaction between n-InP and Au occurred. For the low-resistance samples, significant out-diffusion of P in the Au and Ni layers occurred, forming Au–P and Ni–P metallic compounds. Accumulation of Ge in the Ni layer was also detected. We suggest that Ni–P may be very critical in obtaining low contact resistance for n-InP.

Buttons and Threads—Tailoring Defect Analysis

2006 ◽  
Author(s):  
Carolyn F. H. Gondran ◽  
Dennis F. Paul ◽  
Sanjit K. Das ◽  
Brendan J. Foran ◽  
Mark H. Clark
Keyword(s):  
Electron Spectroscopy ◽  
Scanning Transmission Electron Microscopy ◽  
Auger Electron ◽  
Defect Analysis ◽  
Transmission Electron ◽  
Analysis Technique ◽  
Small Defect ◽  
Scanning Transmission ◽  
Auger Microscopy ◽  
Electron Energy Loss

Abstract A framework is presented for considering the relative strengths of Auger electron spectroscopy (AES)/scanning Auger microscopy (SAM) and scanning transmission electron microscopy–electron energy loss spectroscopy (STEM-EELS) when selecting a defect analysis technique. The geometry of the analysis volumes for each technique is visualized. The analysis volume for AES/SAM is shaped like a button while the STEM-EELS analysis volume is more like a thread extending throughout the thickness of the prepared sample. The usefulness of this framework is illustrated with the example of small defect particles. In this example the size and shape of the AES/SAM analysis volume is a better fit to the defect, thus it provides better chemical analysis while STEM provides better images of the defects.

Grain Boundary Segregation of Bismuth in Copper

1981 ◽  
Vol 39 ◽  
pp. 286-287
Author(s):  
J. R. Michael ◽  
D. B. Williams
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Grain Boundary ◽  
Electron Spectroscopy ◽  
Scanning Transmission Electron Microscopy ◽  
Auger Electron ◽  
Boundary Segregation ◽  
Grain Boundary Segregation ◽  
Transmission Electron ◽  
Scanning Transmission

Bismuth is known to segregate to grain boundaries in copper resulting in embrittlement and intergranular failure at low stress levels. This segregation has been studied primarily by Auger Electron Spectroscopy (AES). The applicability of scanning transmission electron microscopy (STEM)and Energy Dispersive Spectroscopy (EDS) to the study of equilibrium grain boundary segregation has already been demonstrated and the aim of this study is to determine the degree of segregation as a function of time and temperature. The major advantage of STEM over AES is that STEM does not require fracturing of the specimen, so the boundaries to be studied are left undisturbed. Thus, this technique is also applicable to systems which do not exhibit intergranular fracture.Cu-Bi specimens were prepared by evaporating Bi onto both sides of 3mm Cu discs, which were then heated for 1 week at 400°C to allow the Bi to diffuse into the Cu. The samples were then aged at 450, 550, 600, 650, and 700°C for 3 days and 12 days, ion-thinned and then examined in a Philips EM 400T TEM/STEM with an EDAX detector and EDAX 9100 analyzer. If necessary, the specimens were tilted such that the boundaries were parallel to the electron beam.

Sem and Aes Analysis of Ion Implanted Graphite

1981 ◽  
Vol 7 ◽  
Author(s):  
M. Shayegan ◽  
B.S. Elman ◽  
H. Mazurek ◽  
M.S. Dresselhaus ◽  
G. Dresselhaus
Keyword(s):  
Electron Microscopy ◽  
Electron Spectroscopy ◽  
Scanning Transmission Electron Microscopy ◽  
Auger Electron ◽  
Surface Damage ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Lattice Damage ◽  
Implantation Profile ◽  
Ion Implanted

ABSTRACTIon-implantation of graphite is characterized with respect to lattice damage and the distribution of implanted ions. Both the depth profile of the implanted ions and of the lattice damage are shown to follow the models previously developed for ion-implanted semiconductors. Auger electron spectroscopy (AES) is used to monitor the implantation profile. The surface damage is examined by scanning electron microscopy (SEM) while microcrystalline regions in an amorphous background are observed by scanning transmission electron microscopy (STEM).

Novel resistance reduction and phase changes of contacts to n-type InP by rapid thermal annealing

2002 ◽  
Vol 744 ◽  
Author(s):  
J.S. Huang ◽  
T. Nguyen ◽  
N. Bar-Chaim ◽  
C.B. Vartuli ◽  
S. Anderson ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Thermal Annealing ◽  
Interfacial Reaction ◽  
Rapid Thermal Annealing ◽  
Phase Changes ◽  
Long Wavelength ◽  
Transmission Electron ◽  
Resistance Reduction ◽  
Scanning Transmission ◽  
Metallic Compounds

ABSTRACTWe studied the influence of n-metal alloy on the long wavelength InP device performance. Various alloy schemes of rapid thermal annealing (RTA) were experimented to obtain the optimized contact resistance for the n-InP/AuGe/Ni/Au/Cr/Au metallization systems. Significant resistance reduction was achieved at 390°C for 45sec with wafer flattening step at 310°C. Using scanning transmission electron microscopy (STEM) and Auger electron spectroscopy (AES) analyses, we showed that resistance was correlated with interfacial reaction at the n-InP/metal. For the high resistance devices, little interfacial reaction between n-InP and Au occurred. For the low resistance devices, significant out-diffusion of P in the bottom Au and Ni layers occurred, forming Au-P and Ni-P metallic compounds. In addition, accumulation of Ge in the Ni layer was also detected. We suggest that Ni-P is very critical in obtaining low contact resistance for n-InP.

Imaging small metal particles with Auger electrons

1992 ◽  
Vol 50 (1) ◽  
pp. 308-309
Author(s):  
J. Liu ◽  
G. G. Hembree ◽  
G. E. Spinnler ◽  
J. A. Venables
Keyword(s):  
High Resolution ◽  
Scanning Transmission Electron Microscopy ◽  
Supported Catalysts ◽  
Metal Particles ◽  
Chemical Information ◽  
Auger Electrons ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Auger Microscopy ◽  
Small Metal Particles

High spatial resolution Auger electron spectroscopy (AES) and scanning Auger microscopy (SAM) have been developed in a UHV scanning transmission electron microscopy (STEM) instrument. A resolution < 3 nm has been achieved in SAM images. The application of high resolution AES and SAM to the study of supported catalysts has proved very powerful for extracting chemical information of the surface species. In this paper we report further study of supported metal particles by using high resolution AES and SAM. These experiments were conducted in a VG HB-501S UHV STEM codenamed “MIDAS”. Auger electrons were collected from the entrance surface of the sample using a 100 keV probe.

High-Voltage Scanning Electron Microscopy

1970 ◽  
Vol 28 ◽  
pp. 6-7
Author(s):  
J. M. Cowley
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Scanning Transmission Electron Microscopy ◽  
Wave Optics ◽  
Contrast Effects ◽  
Transmission Electron ◽  
Mode Of Operation ◽  
Scanning Transmission ◽  
Types Of Information ◽  
Voltage Scanning

The comparison of scanning transmission electron microscopy (STEM) with conventional transmission electron microscopy (CTEM) can best be made by means of the Reciprocity Theorem of wave optics. In Fig. 1 the intensity measured at a point A’ in the CTEM image due to emission from a point B’ in the electron source is equated to the intensity at a point of the detector, B, due to emission from a point A In the source In the STEM. On this basis it can be demonstrated that contrast effects In the two types of instrument will be similar. The reciprocity relationship can be carried further to include the Instrument design and experimental procedures required to obtain particular types of information. For any. mode of operation providing particular information with one type of microscope, the analagous type of operation giving the same information can be postulated for the other type of microscope. Then the choice between the two types of instrument depends on the practical convenience for obtaining the required Information.

Imaging and diffraction modes in Scanning Transmission Electron Microscopy

1986 ◽  
Vol 44 ◽  
pp. 684-687
Author(s):  
J. M. Cowley ◽  
R. Glaisher ◽  
J. A. Lin ◽  
H.-J. Ou
Keyword(s):  
Scanning Transmission Electron Microscopy ◽  
High Efficiency ◽  
Fiber Optic ◽  
Image Intensifier ◽  
Detector System ◽  
Detector Plane ◽  
Secondary Electrons ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Special Detector

Some of the most important applications of STEM depend on the variety of imaging and diffraction made possible by the versatility of the detector system and the serial nature, of the image acquisition. A special detector system, previously described, has been added to our STEM instrument to allow us to take full advantage of this versatility. In this, the diffraction pattern in the detector plane may be formed on either of two phosphor screens, one with P47 (very fast) phosphor and the other with P20 (high efficiency) phosphor. The light from the phosphor is conveyed through a fiber-optic rod to an image intensifier and TV system and may be photographed, recorded on videotape, or stored digitally on a frame store. The P47 screen has a hole through it to allow electrons to enter a Gatan EELS spectrometer. Recently a modified SEM detector has been added so that high resolution (10Å) imaging with secondary electrons may be used in conjunction with other modes.

Scanning Transmission Electron Microscopy of Polyethylene Crystals

1980 ◽  
Vol 38 ◽  
pp. 242-245
Author(s):  
F. Khoury ◽  
L. H. Bolz
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Crystallization Temperature ◽  
Scanning Transmission Electron Microscopy ◽  
Growth Habit ◽  
Lateral Growth ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Growth Habits

The lateral growth habits and non-planar conformations of polyethylene crystals grown from dilute solutions (<0.1% wt./vol.) are known to vary depending on the crystallization temperature.1-3 With the notable exception of a study by Keith2, most previous studies have been limited to crystals grown at <95°C. The trend in the change of the lateral growth habit of the crystals with increasing crystallization temperature (other factors remaining equal, i.e. polymer mol. wt. and concentration, solvent) is illustrated in Fig.l. The lateral growth faces in the lozenge shaped type of crystal (Fig.la) which is formed at lower temperatures are {110}. Crystals formed at higher temperatures exhibit 'truncated' profiles (Figs. lb,c) and are bound laterally by (110) and (200} growth faces. In addition, the shape of the latter crystals is all the more truncated (Fig.lc), and hence all the more elongated parallel to the b-axis, the higher the crystallization temperature.

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