The Surface Damage in SiO2 Caused by Chemical Mechanical Polishing on Ic-60 Pads

1994 ◽  
Vol 337 ◽  
Author(s):  
Shyam Murarka ◽  
Sen-Hou Ko ◽  
Minoru Tomozawa ◽  
Pei-Jun Ding ◽  
William A. Lanford
Keyword(s):  
Electrical Properties ◽  
Nuclear Reaction ◽  
Chemical Mechanical Polishing ◽  
Colloidal Silica ◽  
Surface Damage ◽  
Mechanical Polishing ◽  
Interlayer Dielectric ◽  
Silicon Devices ◽  
Thermal Oxide ◽  
Silica Slurry

ABSTRACTChemical Mechanical polishing (CMP) is a useful technique for achieving global planarization in the ICs. The CMP of oxide has been used and studied for decades. Only recently the technique has been employed for planarizing the interlayer dielectric (ILD) on the silicon devices circuits. The effect of such polishing on the performance of the ILD has been the concern. This paper examines the attempts on defining the damage caused by CMP and its effect on the electrical properties after polished SiO2 wafers. In this investigation the PECVD and thermal oxide films were polished in the colloidal silica slurry on IC 60 pad. The polished oxide were then studied using I-V and nuclear reaction technique. The results show a surface damage which extends to about 800 Å in the polished oxide. The changes occurring in the concentration of hydrogenous species at the surface of SiO2 as determined by nuclear reaction technique will also be presented. It is shown that due to CMP as-deposited CVD SiO2 films loose water from surface regions whereas well annealed or dry oxides gain water at the surface. The results will be discussed and mechanisms will be presented to explain electrical results.

Effect of Process Parameters on Material Removal Rate in Chemical Mechanical Polishing of 6H-SiC(0001)

2008 ◽  
Vol 600-603 ◽  
pp. 831-834 ◽  
Author(s):  
Joon Ho An ◽  
Gi Sub Lee ◽  
Won Jae Lee ◽  
Byoung Chul Shin ◽  
Jung Doo Seo ◽  
...  
Keyword(s):  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Colloidal Silica ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Diamond Particles ◽  
Average Grain Size ◽  
Silica Slurry ◽  
Sic Wafer

2inch 6H-SiC (0001) wafers were sliced from the ingot grown by a conventional physical vapor transport (PVT) method using an abrasive multi-wire saw. While sliced SiC wafers lapped by a slurry with 1~9㎛ diamond particles had a mean height (Ra) value of 40nm, wafers after the final mechanical polishing using the slurry of 0.1㎛ diamond particles exhibited Ra of 4Å. In this study, we focused on investigation into the effect of the slurry type of chemical mechanical polishing (CMP) on the material removal rate of SiC materials and the change in surface roughness by adding abrasives and oxidizer to conventional KOH-based colloidal silica slurry. The nano-sized diamond slurry (average grain size of 25nm) added in KOH-based colloidal silica slurry resulted in a material removal rate (MRR) of 0.07mg/hr and the Ra of 1.811Å. The addition of oxidizer (NaOCl) in the nano-size diamond and KOH based colloidal silica slurry was proven to improve the CMP characteristics for SiC wafer, having a MRR of 0.3mg/hr and Ra of 1.087Å.

Colloidal Silica based High Selectivity Shallow Trench Isolation (STI) Chemical Mechanical Polishing (CMP) Slurry

2005 ◽  
Vol 867 ◽  
Author(s):  
Kyoung-Ho Bu ◽  
Brij M. Moudgil
Keyword(s):  
Silicon Nitride ◽  
Chemical Mechanical Polishing ◽  
Colloidal Silica ◽  
Sodium Dodecyl ◽  
Mechanical Polishing ◽  
Wafer Surface ◽  
Shallow Trench Isolation ◽  
Pattern Size ◽  
Trench Isolation ◽  
Silica Slurry

AbstractAmong various properties of chemical mechanical polishing (CMP) slurry, selectivity plays a key role in global planarization of high density and small pattern size shallow trench isolation (STI) process. Lack of adequate selectivity can lead to defects such as dishing and erosion. To improve the selectivity of STI CMP process, CMP characteristics of silica and silicon nitride wafer were investigated using colloidal silica slurry as a function of slurry pH. Sodium dodecyl sulfate (SDS), an anionic surfactant, was added to increase the selectivity of the slurry. As a result, selectivity increased from 3 to 25. It was concluded that selective passivation layer formed on silicon nitride wafer surface at acidic slurry pH range was responsible for the observed selectivity increase. Adsorption characteristics of SDS on silica and silicon nitride were measured as a function of slurry pH and concentration of SDS. As indicated by zeta potential behavior under acidic pH conditions, SDS adsorption on silicon nitride was significantly higher han silica due to the electrostatic forces. Significantly higher SDS coating on silicone nitride seems to have resulted in lubrication layer leading to increased polishing selectivity.

Chemical mechanical polishing of thermal oxide films using silica particles coated with ceria

2002 ◽  
Vol 17 (10) ◽  
pp. 2744-2749 ◽  
Author(s):  
Seung-Ho Lee ◽  
Zhenyu Lu ◽  
S. V. Babu ◽  
Egon Matijević
Keyword(s):  
Chemical Mechanical Polishing ◽  
Colloidal Silica ◽  
Oxide Films ◽  
Silica Particles ◽  
Silicon Wafers ◽  
Mechanical Polishing ◽  
Thermal Oxide ◽  
Pure Ceria ◽  
Polish Rate

Thermal oxide covered silicon wafers were polished with slurries containing either nano-sized ceria (CeO2) or newly prepared uniform colloidal silica particles coated with ceria. The polish rate of the latter was significantly higher than that of pure ceria. The experiments were carried out using different concentrations of the abrasives at pH 4 and 10. Little effect on the polishing rates was noted when the conditions of the slurries were varied, which was explained by the compensation of two opposite polishing mechanisms.

Effect of Alkaline Agent in Colloidal Silica Slurry for Polycrystalline Silicon Chemical Mechanical Polishing

2007 ◽  
Vol 46 (8A) ◽  
pp. 5089-5094 ◽  
Author(s):  
Myung-Yoon Lee ◽  
Hyun-Goo Kang ◽  
Manabu Kanemoto ◽  
Ungyu Paik ◽  
Jea-Gun Park
Keyword(s):  
Chemical Mechanical Polishing ◽  
Polycrystalline Silicon ◽  
Colloidal Silica ◽  
Mechanical Polishing ◽  
Alkaline Agent ◽  
Silica Slurry

Ammonium-Salt-Added Silica Slurry for the Chemical Mechanical Polishing of the Interlayer Dielectric Film Planarization in ULSI's

1995 ◽  
Vol 34 (Part 1, No. 2B) ◽  
pp. 1037-1042 ◽  
Author(s):  
Yoshihiro Hayashi ◽  
Michio Sakurai ◽  
Tsutomu Nakajima ◽  
Kanji Hayashi ◽  
Syuzo Sasaki ◽  
...  
Keyword(s):  
Ammonium Salt ◽  
Chemical Mechanical Polishing ◽  
Dielectric Film ◽  
Mechanical Polishing ◽  
Interlayer Dielectric ◽  
Silica Slurry

Chemical Mechanical Polishing of Gallium Nitride with Colloidal Silica

2011 ◽  
Vol 158 (12) ◽  
pp. H1206 ◽  
Author(s):  
Hideo Aida ◽  
Hidetoshi Takeda ◽  
Koji Koyama ◽  
Haruji Katakura ◽  
Kazuhiko Sunakawa ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Chemical Mechanical Polishing ◽  
Colloidal Silica ◽  
Mechanical Polishing

Study on Chemical Mechanical Polishing Technology of Copper

2008 ◽  
Vol 373-374 ◽  
pp. 820-823
Author(s):  
Sheng Li Wang ◽  
Y.J. Yuan ◽  
Yu Ling Liu ◽  
X.H. Niu
Keyword(s):  
Chemical Mechanical Polishing ◽  
Colloidal Silica ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Alkali Concentration ◽  
Copper Films ◽  
Optimum Conditions ◽  
Slurry Flow Rate ◽  
Polishing Pressure ◽  
Oxidizer Concentration

Chemical mechanical polishing (CMP) of copper films in alkaline slurries was investigated. In the copper CMP, the slurry was made by adding colloidal silica abrasive to de-ionized water.The organic alkali was added to adjust the pH, H2O2 was used as an oxidizer.The effects of varying polishing temperature, polishing pressure, slurry flow rate, organic alkali concentration and oxidizer concentration on removal rate were investigated in order to determine the optimum conditions for those parameters. It is shown the chemical composition of the slurry was 2%~3% oxidizer concentration, 3% organic alkali concentration and proper amount surfactant is reasonable. The solid concentration of the polishing slurry was fixed at 20% by weight. The removal rate of copper could reach 700nm/min and the surface roughness after CMP was 0.49nm.

High Throughput SiC Wafer Polishing with Good Surface Morphology

2007 ◽  
Vol 556-557 ◽  
pp. 753-756 ◽  
Author(s):  
Tomohisa Kato ◽  
Keisuke Wada ◽  
Eiji Hozomi ◽  
Hiroyoshi Taniguchi ◽  
Tomonori Miura ◽  
...  
Keyword(s):  
Free Surface ◽  
High Throughput ◽  
Chemical Mechanical Polishing ◽  
Colloidal Silica ◽  
Flat Surface ◽  
Good Surface ◽  
Wafer Polishing ◽  
Silica Slurry ◽  
Sic Wafer ◽  
Afm Observation

We report SiC wafer polishing study to achieve high throughput with extremely flat, smooth and damageless surface. The polishing consists of three process, wafer grinding, lapping and chemical mechanical polishing (CMP), which are completed in shortest about 200 minutes in total for 2 inch wafer. Specimens of 4H- and 6H-SiC were provided from slicing single crystal as wafers oriented (0001) with 0 or 8 degrees offset angle toward to <112 _ 0>. By the first grinding using a diamond whetstone wheel, we realized flat surface on the wafers with small TTV error of 1 μm in 15 minutes. After second process of lapping, the wafers were finished by CMP using colloidal silica slurry. AFM observation showed not only scratch-free surface but also atomic steps on the wafers after CMP. Rms marks extremely flat value of 0.08 nm in 10 μm square area.

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