Raman scattering of cubic boron nitride films deposited from the low-pressure gas phase

2001 ◽  
Vol 16 (12) ◽  
pp. 3430-3442 ◽  
Author(s):  
W. J. Zhang ◽  
S. Matsumoto
Keyword(s):  
Residual Stress ◽  
Raman Spectroscopy ◽  
Boron Nitride ◽  
Line Width ◽  
Cubic Boron Nitride ◽  
Chemical Vapor ◽  
Peak Shift ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Optimized Conditions

By introduction of the chemical effects of fluorine, thick cubic boron nitride (cBN) films with high phase purity and low residual stress were synthesized on silicon substrates by dc-bias-assisted dc jet chemical vapor deposition in an Ar–N2–BF3–H2 system. In this paper, the characterization of the films by scanning electron microscopy, glancing-angle x-ray diffraction, infrared spectroscopy, and Raman spectroscopy was done. Among these techniques, Raman spectroscopy was intensively studied, and a method was established to evaluate the crystallinity and residual stress of the cBN films from the line width and peak shift of Raman charactersitic peaks. The influences of the experimental parameters, i.e., bias voltage, substrate temperature, and deposition time, on the film quality were systematically studied. An experimental window for the deposition of cBN films was described. The cBN films deposited under optimized conditions showed the similar line width of both Raman TO and LO modes and thus a crystallinity comparable to that of 4–8-μm cBN single crystals synthesized by high-ressure and high-temperature methods.

Routes to Diamond Heteroepiitaxy

1991 ◽  
Vol 250 ◽  
Author(s):  
Andrzej Badzian ◽  
Teresa Badzian
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Cubic Boron Nitride ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Plasma Chemical Vapor Deposition ◽  
Nickel Hydride ◽  
The Status

AbstractThis paper reviews the status of diamond heteroepitaxy approached by chemical vapor deposition and by physical methods. Reported are experiments with cubic boron nitride and nickel conducted with the help of microwave plasma chemical vapor deposition. X-ray diffraction data confirm diamond heteroepitaxy on the (111) faces of cubic boron nitride crystals. Heteroepitaxy on nickel was not demonstrated yet nevertheless suppression of graphite nucleation was achieved by formation of nickel hydride.

Epitaxially Grown Hexagonal Boron Nitride Films on Sapphire and Silicon Substrates

2020 ◽  
Vol 843 ◽  
pp. 90-96
Author(s):  
Xi Chen ◽  
Chun Bo Tan ◽  
Kai Ran Luan ◽  
Shuai Wang ◽  
Fang Ye Li ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Pressure Chemical ◽  
Boron Source ◽  
Α Al2o3 ◽  
Boron Nitride Films

Hexagonal boron nitride (hBN) films were epitaxially grown on (100)-Oriented silicon and c-plane sapphire (α-Al2O3) substrates via a low-pressure chemical vapor deposition (LPCVD) method with boron trichloride (BCl3) and ammonia (NH3) as the boron source and nitrogen source. Crystalline quality differences between hBN films grown on different substrates are studied and discussed by XPS, Raman spectroscopy, XRD and SEM characterizations. All the characterization results indicate that the sapphire substrate is more suitable for epitaxial growth of hBN films than silicon substrates.

Microstructural studies of boron nitride films deposited by microwave plasma-assisted chemical vapor deposition by using trimethyl borazine precursor

1999 ◽  
Vol 14 (3) ◽  
pp. 829-833 ◽  
Author(s):  
A. Ratna Phani
Keyword(s):  
Boron Nitride ◽  
Microwave Plasma ◽  
Cubic Boron Nitride ◽  
Chemical Vapor ◽  
Interplanar Distance ◽  
Stoichiometric Ratio ◽  
X Ray Diffraction ◽  
X Ray ◽  
Different Temperatures ◽  
Deposited Films

Thin films of cubic boron nitride (c-BN) were synthesized using an organometallic precursor trimethylborazine (TMB) which contains both boron and nitrogen in 1 : 1 stoichiometric ratio. The films were deposited at different temperatures ranging from 300 to 500 °C at a pressure of 2 Torr and at 360 W microwave power, using N2 as carrier gas. The deposited films were characterized by Fourier transform infrared spectroscopy (FTIR), x-ray diffraction (XRD), and scanning electron microscopy (SEM), which reveal the presence of amorphous BN and crystalline c-BN in varying proportions. The x-ray diffraction pattern of the deposited films showed a strongest peak at 2θ = 57.1° where the interplanar distance value, d = 2.06 Å, agreed well with the (111) crystallographic orientation of c-BN phase.

Influence of experiment parameters on the growth of cBN films by bias-assisted direct current jet plasma chemical vapor deposition

2000 ◽  
Vol 15 (12) ◽  
pp. 2677-2683 ◽  
Author(s):  
W. J. Zhang ◽  
S. Matsumoto
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Direct Current ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nitride Film ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Plasma Chemical Vapor Deposition ◽  
Jet Plasma

Boron nitride films were synthesized on silicon substrates by radio frequency-bias- assisted direct current jet chemical vapor deposition in Ar–N2–BF3–H2 system. The formation and content of cBN phase were investigated by means of Fourier transform infrared spectroscopy, glancing-angle x-ray diffraction, and scanning electron microscopy. The influences of the experimental parameters, i.e., bias voltage, substrate temperature, and gas composition, on the cBN content in the deposited films were systematically studied, and an experimentally optimum window for the deposition of cBN films was observed. Under optimized conditions, a boron nitride film with cBN content higher than 85% was deposited and a growth rate of about 70 nm/min was achieved.

Low Pressure MOCVD Growth and Characterization of GaAs and InP on Silicon Substrates

1988 ◽  
Vol 126 ◽  
Author(s):  
M. Razeghi ◽  
M. Defour ◽  
F. Omnes ◽  
J. Nagle ◽  
P. Maurel ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Low Pressure ◽  
Buffer Layers ◽  
Silicon Substrates ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
High Quality ◽  
Mocvd Growth ◽  
Vapor Deposition Technique ◽  
Low Pressure Mocvd

ABSTRACTHigh quality GaAs and InP have been grown on silicon substrates, using low pressure metalorganic chemical vapor deposition technique. The growth temperature is 550°C and the growth rate 100 A/min.Photoluminescence, X-ray diffraction and electrochemical profiling verified the high quality of these layers. The use of superlattices as buffer layers, (GaAs/GaInP) in the case of GaAs/Si and (GaInAsP/InP) in the case of InP/Si, decreased the amount of misfit dislocations in the epitaxial layer. Carrier concentrations as low as 5.1015 cm−3 have been measured by electrochemical profiling.

Twin structures of rhombohedral and cubic boron nitride prepared by chemical vapor deposition method

2003 ◽  
Vol 12 (3-7) ◽  
pp. 1138-1145 ◽  
Author(s):  
Takeo Oku ◽  
Kenji Hiraga ◽  
Toshitsugu Matsuda ◽  
Toshio Hirai ◽  
Makoto Hirabayashi
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Cubic Boron Nitride ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Deposition Method

Epitaxial Ferroelectric BaTiO3 Thin Films for Microphotonic Applications

2000 ◽  
Vol 637 ◽  
Author(s):  
F. Niu ◽  
A.R. Teren ◽  
B.H. Hoerman ◽  
B.W. Wessels
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Insulating Layer ◽  
Ferroelectric State ◽  
Transmission Electron ◽  
Electro Optic ◽  
Metal Organic ◽  
Mgo Layers

AbstractEpitaxial ferroelectric BaTiO3 thin films have been developed as a material for microphotonics. Efforts have been directed toward developing these materials for thin film electro-optic modulators. Films were deposited by metalorganic chemical vapor deposition (MOCVD) on both MgO and silicon substrates. The electro-optic properties of the thin films were measured. For BaTiO3 thin films grown on (100) MgO substrates, the effective electro-optic coefficient, reff depended on the magnitude and direction of the electric field. Coefficients as high as 260 pm/V have been measured. Investigation of BaTiO3 films on silicon has been undertaken. Epitaxial BaTiO3 thin films were deposited by MOCVD on (100) MgO layers grown on silicon (100) substrates by metal-organic molecular beam epitaxy (MOMBE). The MgO serves as the low index optical cladding layer as well as an insulating layer. X-ray diffraction and transmission electron microscopy (TEM) indicated that BaTiO3 was epitaxial with an orientational relation given by BaTiO3 (100)//Si (100) and BaTiO3[011]//Si [011]. Polarization measurements indicated that the BaTiO3 epitaxial films on Si were in the ferroelectric state.

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