Influence of experiment parameters on the growth of cBN films by bias-assisted direct current jet plasma chemical vapor deposition

2000 ◽  
Vol 15 (12) ◽  
pp. 2677-2683 ◽  
Author(s):  
W. J. Zhang ◽  
S. Matsumoto
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Direct Current ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nitride Film ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Plasma Chemical Vapor Deposition ◽  
Jet Plasma

Boron nitride films were synthesized on silicon substrates by radio frequency-bias- assisted direct current jet chemical vapor deposition in Ar–N2–BF3–H2 system. The formation and content of cBN phase were investigated by means of Fourier transform infrared spectroscopy, glancing-angle x-ray diffraction, and scanning electron microscopy. The influences of the experimental parameters, i.e., bias voltage, substrate temperature, and gas composition, on the cBN content in the deposited films were systematically studied, and an experimentally optimum window for the deposition of cBN films was observed. Under optimized conditions, a boron nitride film with cBN content higher than 85% was deposited and a growth rate of about 70 nm/min was achieved.

Routes to Diamond Heteroepiitaxy

1991 ◽  
Vol 250 ◽  
Author(s):  
Andrzej Badzian ◽  
Teresa Badzian
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Cubic Boron Nitride ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Plasma Chemical Vapor Deposition ◽  
Nickel Hydride ◽  
The Status

AbstractThis paper reviews the status of diamond heteroepitaxy approached by chemical vapor deposition and by physical methods. Reported are experiments with cubic boron nitride and nickel conducted with the help of microwave plasma chemical vapor deposition. X-ray diffraction data confirm diamond heteroepitaxy on the (111) faces of cubic boron nitride crystals. Heteroepitaxy on nickel was not demonstrated yet nevertheless suppression of graphite nucleation was achieved by formation of nickel hydride.

Growth of cubic boron nitride films on tungsten carbide substrates by direct current jet plasma chemical vapor deposition

2004 ◽  
Vol 19 (5) ◽  
pp. 1408-1412 ◽  
Author(s):  
J. Yu ◽  
S. Matsumoto
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Cubic Boron Nitride ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Gas System ◽  
Jet Plasma

Cubic boron nitride (cBN) film was deposited on Co-containing WC substrates by dc jet plasma chemical vapor deposition from an Ar–N2–BF3–H2 gas system. The formation of cobalt nitrides was observed at interface, and the hindrance of Co on cBN growth was demonstrated. Growth temperature and etching treatment of the substrate before deposition influenced the cBN growth greatly. At 1050 °C, cBN films were obtained on etched substrates but not on unetched substrates. At 1090 °C, cBN films were not obtained even on etched substrates. At 960 °C, cBN films deposited even on unetched substrate but the films always peeled off after exposing to air. The film quality of cBN deposited at 960 °C is better than that deposited at 1050 °C.

Intermittent growth of a diamond film by direct current hot cathode plasma chemical vapor deposition

Carbon ◽  
2013 ◽  
Vol 51 ◽  
pp. 437 ◽  
Author(s):  
Hong-wei Jiang ◽  
Hai-liang Huang ◽  
Xiang-hua Jia ◽  
Long-cheng Yin ◽  
Yu-qiang Chen ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Direct Current ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Cathode Plasma ◽  
Plasma Chemical Vapor Deposition

Growth of Cubic Silicon Carbide on Silicon Using Hot Filament CVD

2017 ◽  
Vol 897 ◽  
pp. 91-94
Author(s):  
Philip Hens ◽  
Ryan Brow ◽  
Hannah Robinson ◽  
Michael Cromar ◽  
Bart van Zeghbroeck
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Degrees Of Freedom ◽  
Thick Layer ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Hot Filament ◽  
Cubic Silicon Carbide ◽  
First Time

In this paper, we report, for the first time, growth of high-quality single-crystalline 3C-SiC on silicon substrates using Hot Filament Chemical Vapor Deposition (HF-CVD). Rocking curve X-Ray diffraction (XRD) measurements revealed a full-width at half maximum (FWHM) as low as 333 arcsec for a 15 μm thick layer. Low tensile strain, below 0.1%, was measured using Raman spectroscopy. This quality was achieved with a carefully optimized process making use of the additional degrees of freedom the hot filaments create. For example, the hot filaments allow for precursor pre-cracking. Additionally, they allow a tuning of the vertical thermal gradient which creates an improved thermal field compared to classic Chemical Vapor Deposition techniques used for the deposition of this material today.

Characteristics of Gallium Oxide Nanowires Synthesized by the Metalorganic Chemical Vapor Deposition

2007 ◽  
Vol 539-543 ◽  
pp. 1230-1235 ◽  
Author(s):  
Hyoun Woo Kim ◽  
S.H. Shim
Keyword(s):  
Chemical Vapor Deposition ◽  
Cross Sections ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Metalorganic Chemical

We have synthesized the high-density Ga2O3 nanowires on gold (Au)-coated silicon substrates using metalorganic chemical vapor deposition. The nanowires exhibited one-dimensional structures having circular cross sections with diameters in the range of 30-200 nm. The energy dispersive x-ray spectroscopy revealed that the nanowires contained elements of Ga and O, without Au-related impurities. X-ray diffraction analysis and high-resolution transmission electron microscopy showed that the Ga2O3 nanowires were crystalline.

DEPOSITION AND CHARACTERIZATION OF NANOCRYSTALLINE DIAMOND FILMS ON MIRROR-POLISHED Si SUBSTRATE BY BIASED ENHANCED MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION

2002 ◽  
Vol 16 (06n07) ◽  
pp. 845-852
Author(s):  
T. Soga ◽  
T. Sharda ◽  
T. Jimbo ◽  
M. Umeno
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Methane Concentration ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Nanocrystalline Diamond ◽  
Silicon Substrates ◽  
Si Substrate ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition

Hard and smooth nanocrystalline diamond (NCD) thin films were deposited on polished silicon substrates by biased enhanced growth in microwave plasma chemical vapor deposition. The films deposited with varying the methane concentration and biasing voltage were characterized by Raman spectroscopy, nano-indenter, x-ray diffraction and atomic force microscopy. Stress in the films increases with decreasing methane concentration in the gas-phase and with increasing biasing. The adhesion between NCD film and Si substrate is very strong sustaining the compressive stress as high as high as 85 GPa. It was hypothesized that hydrogen content of the films and graphitic content of the films are responsible in generating stress. The hardness is well correlated with the Raman peak intensity ratio of NCD peak to G peak.

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