Investigations of crystallinity and residual stress of cubic boron nitride films by Raman spectroscopy

2001 ◽  
Vol 63 (7) ◽  
Author(s):  
W. J. Zhang ◽  
S. Matsumoto
Keyword(s):  
Residual Stress ◽  
Raman Spectroscopy ◽  
Boron Nitride ◽  
Cubic Boron Nitride ◽  
Boron Nitride Films

Structural analysis of cubic boron nitride films by ultraviolet Raman spectroscopy

2006 ◽  
Vol 88 (24) ◽  
pp. 241922 ◽  
Author(s):  
K. M. Leung ◽  
H. Q. Li ◽  
Y. S. Zou ◽  
K. L. Ma ◽  
Y. M. Chong ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Structural Analysis ◽  
Boron Nitride ◽  
Cubic Boron Nitride ◽  
Boron Nitride Films

Raman scattering of cubic boron nitride films deposited from the low-pressure gas phase

2001 ◽  
Vol 16 (12) ◽  
pp. 3430-3442 ◽  
Author(s):  
W. J. Zhang ◽  
S. Matsumoto
Keyword(s):  
Residual Stress ◽  
Raman Spectroscopy ◽  
Boron Nitride ◽  
Line Width ◽  
Cubic Boron Nitride ◽  
Chemical Vapor ◽  
Peak Shift ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Optimized Conditions

By introduction of the chemical effects of fluorine, thick cubic boron nitride (cBN) films with high phase purity and low residual stress were synthesized on silicon substrates by dc-bias-assisted dc jet chemical vapor deposition in an Ar–N2–BF3–H2 system. In this paper, the characterization of the films by scanning electron microscopy, glancing-angle x-ray diffraction, infrared spectroscopy, and Raman spectroscopy was done. Among these techniques, Raman spectroscopy was intensively studied, and a method was established to evaluate the crystallinity and residual stress of the cBN films from the line width and peak shift of Raman charactersitic peaks. The influences of the experimental parameters, i.e., bias voltage, substrate temperature, and deposition time, on the film quality were systematically studied. An experimental window for the deposition of cBN films was described. The cBN films deposited under optimized conditions showed the similar line width of both Raman TO and LO modes and thus a crystallinity comparable to that of 4–8-μm cBN single crystals synthesized by high-ressure and high-temperature methods.

Improvement of Adhesion of Cubic Boron Nitride Films: Effect of Interlayer and Deposition Parameters

2005 ◽  
Vol 475-479 ◽  
pp. 3635-3640
Author(s):  
Qi He ◽  
Cheng Ming Li ◽  
Fan Xiu Lu ◽  
Lawrence Pilione ◽  
Russell F. Messier
Keyword(s):  
Thin Film ◽  
Residual Stress ◽  
Boron Nitride ◽  
Cubic Boron Nitride ◽  
Annealing Treatment ◽  
Post Deposition Annealing ◽  
Step Process ◽  
Deposition Parameters ◽  
Boron Nitride Films ◽  
Post Deposition

Diamond and B4C coatings were used as an interlayer for the growth of cubic boron nitride thin films on c-silicon. By employing a B-C-N gradient layer on top of the B4C interlayer, improved adhesion occured between BN and B4C. A multi-step process after the nucleation of c-BN was found very helpful for improving the adhesion of c-BN on silicon with interlayers. Residual stress of c-BN thin film was significantly decreased by using a new post-deposition annealing treatment.

scholarly journals Nucleation and Growth of Cubic Boron Nitride Films Produced by Ion-Assisted Pulsed Laser Deposition

1993 ◽  
Vol 316 ◽  
Author(s):  
T. A. Friedmann ◽  
D. L. Medlin ◽  
P. B. Mirkarimi ◽  
K. F. McCarty ◽  
E. J. Klaus ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Growth Parameters ◽  
Cubic Boron Nitride ◽  
Ion Source ◽  
Growth Time ◽  
Grain Sizes ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron ◽  
Parametric Studies ◽  
Boron Nitride Films

ABSTRACTWe are studying the boron nitride system by using a pulsed excimer laser to ablate from hexagonal BN (hBN) targets to form cubic BN (cBN) films. We are depositing BN films on heated (25 - 800°C) Si (100) surfaces and are using a broad-beam ion source operated with Ar and N2 source gasses to produce BN films with a high percentage of sp3-bonded cBN. In order to understand and optimize the growth and nucleation of cBN films, parametric studies of the growth parameters have been performed. The best films to date show >85% sp3-bonded BN as determined from Fourier-transform infrared (FTIR) reflection spectroscopy. High resolution transmission electron microscopy (TEM) and selected area electron diffraction confirm the presence of cBN in these samples. The films are polycrystalline and show grain sizes up to 30- 40 nm. We find from both the FTIR and TEM analyses that the cBN content in these films evolves with growth time. Initially, the films are deposited as hBN and the cBN nucleates on this hBN underlayer. Importantly, the position of the cBN IR phonon also changes with growth time. Initially this mode appears near 1130 cm-1 and the position decreases with growth time to a constant value of 1085 cm-1. Since in bulk cBN this IR mode appears at 1065 cm-1, a large compressive stress induced by the ion bombardment is suggested. In addition, we report on the variation in cBN percentage with temperature.

scholarly journals Preparation of cubic boron nitride films by radio frequency sputtering

2006 ◽  
Vol 55 (10) ◽  
pp. 5441
Author(s):  
Tian Ling ◽  
Ding Yi ◽  
Chen Hao ◽  
Liu Jun-Kai ◽  
Deng Jin-Xiang ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Radio Frequency ◽  
Cubic Boron Nitride ◽  
Radio Frequency Sputtering ◽  
Boron Nitride Films

Growth process of cubic boron nitride films in bias sputter deposition

1997 ◽  
Vol 295 (1-2) ◽  
pp. 137-141 ◽  
Author(s):  
Yukiko Yamada ◽  
Yoshinao Tatebayashi ◽  
Osamu Tsuda ◽  
Toyonobu Yoshida
Keyword(s):  
Boron Nitride ◽  
Growth Process ◽  
Cubic Boron Nitride ◽  
Sputter Deposition ◽  
Boron Nitride Films

Deposition of high quality cubic boron nitride films on nickel substrates

1994 ◽  
Vol 65 (8) ◽  
pp. 971-973 ◽  
Author(s):  
Fangqing Zhang ◽  
Yongping Guo ◽  
Zhizhong Song ◽  
Guanghua Chen
Keyword(s):  
Boron Nitride ◽  
Cubic Boron Nitride ◽  
High Quality ◽  
Nickel Substrates ◽  
Boron Nitride Films
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