Nanoscale Indentation Hardness and Wear Characterization of Hydrogenated Carbon Thin Films

1996 ◽  
Vol 118 (2) ◽  
pp. 431-438 ◽  
Author(s):  
B. Wei ◽  
K. Komvopoulos
Keyword(s):  
Thin Films ◽  
Wear Rate ◽  
Film Thickness ◽  
Critical Load ◽  
Carbon Films ◽  
Indentation Hardness ◽  
Severe Wear ◽  
Atomic Force ◽  
Carbon Thin Films ◽  
20 Nm

An experimental investigation of the surface topography, nanoindentation hardness, and nanowear characteristics of carbon thin films was conducted using atomic force and point contact microscopy. Hydrogenated carbon films of thickness 5, 10, and 25 nm were synthesized using a sputtering technique. Atomic force microscopy images obtained with silicon nitride tips of nominal radius less than 20 nm demonstrated that the carbon films possessed very similar surface topographies and root-mean-square roughness values in the range of 0.7–1.1 nm. Nanoindentation and nanowear experiments performed with diamond tips of radius equal to about 20 nm revealed a significant enhancement of the hardness and wear resistance with increasing film thickness. High-resolution surface imaging indicated that plastic flow was the dominant deformation process in the nanoindentation experiments. The carbon wear behavior was strongly influenced by variations in the film thickness, normal load, and number of scanning cycles. For a given film thickness, increasing the load caused the transition from an atomic-scale wear process, characterized by asperity deformation and fracture, to severe wear consisting of plowing and cutting of the carbon films. Both the critical load and scanning time for severe wear increased with film thickness. Below the critical load, the wear rate decreased with further scanning and the amount of material worn off was negligibly small, while above the critical load the wear rate increased significantly resulting in the rapid removal of carbon. The observed behavior and trends are in good qualitative agreement with the results of other experimental and contact mechanics studies.

Nanoscale Indentation Hardness and Wear Characterization of Hydrogenated Carbon Thin Films

1995 ◽  
Vol 117 (4) ◽  
pp. 594-601 ◽  
Author(s):  
B. Wei ◽  
K. Komvopoulos
Keyword(s):  
Thin Films ◽  
Wear Rate ◽  
Film Thickness ◽  
Critical Load ◽  
Carbon Films ◽  
Indentation Hardness ◽  
Severe Wear ◽  
Atomic Force ◽  
Carbon Thin Films ◽  
20 Nm

An experimental investigation of the surface topography, nanoindentation hardness, and nanowear characteristics of carbon thin films was conducted using atomic force and point contact microscopy. Hydrogenated carbon films of thickness 5, 10, and 25 nm were synthesized using a sputtering technique. Atomic force microscopy images obtained with silicon nitride tips of nominal radius less than 20 nm demonstrated that the carbon films possessed very similar surface topographies and root-mean-square roughness values in the range of 0.7–1.1 nm. Nanoindentation and nanowear experiments performed with diamond tips of radius equal to about 20 nm revealed a significant enhancement of the hardness and wear resistance with increasing film thickness. High-resolution surface imaging indicated that plastic flow was the dominant deformation process in the nanoindentation experiments. The carbon wear behavior was strongly influenced by variations in the film thickness, normal load, and number of scanning cycles. For a given film thickness, increasing the load caused the transition from an atomic-scale wear process, characterized by asperity deformation and fracture, to severe wear consisting of plowing and cutting of the carbon films. Both the critical load and scanning time for severe wear increased with film thickness. Below the critical load, the wear rate decreased with further scanning and the amount of material worn off was negligibly small, while above the critical load the wear rate increased significantly resulting in the rapid removal of carbon. The observed behavior and trends are in good qualitative agreement with the results of other experimental and contact mechanics studies.

Ion energy dependence of film properties for diamond-like carbon prepared with plasma-assisted deposition

2001 ◽  
Vol 16 (11) ◽  
pp. 3034-3037 ◽  
Author(s):  
Cao Zexian
Keyword(s):  
Carbon Films ◽  
Root Mean Square Roughness ◽  
Film Properties ◽  
Ion Energy ◽  
Atomic Force ◽  
Wave Resonance ◽  
Electron Cyclotron Wave ◽  
20 Nm ◽  
Maximum Content ◽  
Resonance Plasma

Hydrogen-free diamondlike carbon films were prepared on Si(100) with electron cyclotron wave-resonance plasma, which serves to sputter the graphite target and to simultaneously bombard the growing surface. Direct penetration of postionized carbon atoms (up to 140 eV) in addition to the momentum transfer from Ar plasma facilities the formation of the Ta–C structure. Surface morphology, mechanical, and optical properties of the deposits were examined with respect to the ion energy. Atomic force microscope images revealed island morphology in deposits with a typical root-mean-square roughness of 20 nm. A maximum content of about 70% for the fourfold-bonded structure was estimated from the Raman profiles, giving rise to a micro hardness of 60 ± 5 GPa.

Growth Front Roughening of Room Temperature Deposited Oligomer Thin Films

2000 ◽  
Vol 648 ◽  
Author(s):  
D. Tsamouras ◽  
G. Palasantzas ◽  
J. Th. M. De Hosson ◽  
G. Hadziioannou
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Room Temperature ◽  
Growth Front ◽  
Silicon Substrates ◽  
Height Distribution ◽  
Force Microscopy ◽  
Atomic Force ◽  
Roughness Amplitude ◽  
Non Gaussian

AbstractGrowth front scaling aspects are investigated for PPV-type oligomer thin films vapor- deposited onto silicon substrates at room temperature. For film thickness d~15-300 nm, commonly used in optoelectronic devices, correlation function measurement by atomic force microscopy yields roughness exponents in the range H=0.45±0.04, and an rms roughness amplitude which evolves with film thickness as a power law σ∝ dβ with β=0.28±0.05. The non-Gaussian height distribution and the measured scaling exponents (H and β) suggest a roughening mechanism close to that described by the Kardar-Parisi-Zhang scenario.

Production and Characterization of Carbon Thin Films by the Magnetron Sputtering Technique

2016 ◽  
Vol 881 ◽  
pp. 471-474 ◽  
Author(s):  
D.L.C. Silva ◽  
L.R.P Kassab ◽  
J.R. Martinelli ◽  
A.D. Santos ◽  
M.F. Pillis
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Magnetron Sputtering ◽  
Carbon Film ◽  
Carbon Films ◽  
Buffer Layers ◽  
Degree Of Crystallinity ◽  
X Ray Diffraction ◽  
Carbon Thin Films

Carbon thin films were produced by the magnetron sputtering technique. The deposition of the carbon films was performed on Co buffer-layers previously deposited on c-plane (0001) sapphire substrates. The samples were thermally treated under vacuum conditions and characterized by Raman spectroscopy, scanning electron microscopy (SEM) and X-ray diffraction (XRD). The XRD peak related to the carbon film was observed and the Raman spectroscopy indicated a good degree of crystallinity of the carbon film.

Growth of heteroepitaxial GaSb thin films on Si(100) substrates

2004 ◽  
Vol 19 (8) ◽  
pp. 2315-2321 ◽  
Author(s):  
Thang Nguyen ◽  
Walter Varhue ◽  
Edward Adams ◽  
Mark Lavoie ◽  
Stephen Mongeon
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Lattice Mismatch ◽  
Stacking Faults ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Radio Frequency Sputtering ◽  
Atomic Force ◽  
Transmission Electron

The heteroepitaxial growth of GaSb thin films on Si(100) and GaAs(100) substrates is presented. The growth technique involves the use of atomic Ga and Sb species, which are provided by thermal effusion and radio frequency sputtering, respectively. The crystalline quality of the heteroepitaxial GaSb film on the Si substrate is high despite the larger lattice mismatch. Epitaxial quality is determined by high-resolution x-ray diffraction and Rutherford backscatter spectrometry channeling. Atomic-force microscopy is used to monitor the evolution of surface morphology with increasing film thickness. Transmission electron microscopy shows the formation of stacking faults at the Si/GaSb interface and their eventual annihilation with increasing GaSb film thickness. Annihilation of stacking faults occurs when two next-neighbor mounds meet during the overgrowth of a common adjacent mound.

Effects of film thickness and contact load on nanotribological properties of sputtered amorphous carbon thin films

Wear ◽  
2003 ◽  
Vol 254 (10) ◽  
pp. 1010-1018 ◽  
Author(s):  
X.-G Ma ◽  
K Komvopoulos ◽  
D Wan ◽  
D.B Bogy ◽  
Y.-S Kim
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Amorphous Carbon ◽  
Contact Load ◽  
Carbon Thin Films

scholarly journals Fabrication by Spin-Coating and Optical Characterization of Poly(styrene-co-acrylonitrile) Thin Films

Coatings ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 1015
Author(s):  
Elizabeth Hedl ◽  
Ivana Fabijanić ◽  
Iva Šrut Rakić ◽  
Ivan Vadla ◽  
Jordi Sancho-Parramon
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Film Thickness ◽  
Spin Coating ◽  
Visible Range ◽  
Force Microscopy ◽  
Atomic Force ◽  
Linear Behavior ◽  
Concentrated Solution ◽  
Dependent Viscosity

The optical characteristics of poly(styrene-co-acrylonitrile) thin films obtained by spin-coating of polymer blend in tetrahydrofuran were investigated by spectroscopic ellipsometry, spectrophotometry, and atomic force microscopy. Film thickness can be broadly varied by changing the polymer concentration.The film thickness dependence on PSAN concentration shows a non-linear behavior that can be explained by a concentration-dependent viscosity. According to previously proposed models, prepared solutions are close to the concentrated solution regime. Films show a broad transparency range and refractive index independent of film thickness. The refractive index values range from 1.55 to 1.6 in the visible range. Thermal treatment revealed good stability of the films up to 220 °C and a progressive deterioration for larger temperatures, with evident damage at 300 °C. UV-induced photodegradation was observed and results showed a progressive decrease of transmittance in the range between 200 and 300 nm but PSAN thin films show no changes when exposed to light from a solar illuminator. These investigations indicate that PSAN is an excellent candidate for thin film polymer-based optical uses like interference coatings or encapsulation of solar cells.

Electroplated CuO Thin Films from High Alkaline Solutions

2011 ◽  
Vol 15 (1) ◽  
pp. 49-55
Author(s):  
V. Dhanasekaran ◽  
T. Mahalingam ◽  
S. Rajendran ◽  
Jin Koo Rhee ◽  
D. Eapen
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Film Thickness ◽  
Structural Characteristics ◽  
Band Gap Energy ◽  
Alkaline Solutions ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Microstructural Parameters ◽  
Atomic Force

CuO thin films were coated on ITO substrates by an electrodeposition route through potentiostatic mode. The electrodeposited CuO thin films were characterized and the role of copper sulphate concentration on the structural, morphological and optical properties of the CuO films was studied. Film thickness was measured by a stylus profilometer and found to be in the range between 800 and 1400 nm. The structural characteristics studies were carried out using X-ray diffraction and found that the films are polycrystalline in nature with a cubic structure. The preferential orientation of CuO thin films is found to be along (111) plane. The estimated microstructural parameters revealed that the crystallite size increases whereas the number of crystallites per unit area decreases with increasing film thickness. SEM studies show that the grain sizes of CuO thin films vary between 100 and 150 nm and also morphologies revealed that the electrodeposited CuO exhibits uniformity in size and shape. The surface roughness is estimated 15 nm of the CuO film were studied by atomic force microscopy. Optical properties of the films were analyzed from absorption and transmittance studies. The optical band gap energy was determined to be 1.5 eV from absorption coefficient. The variation of refractive index (n), extinction coefficient (k), with wavelength was studied and the results are discussed.

Sign in / Sign up

Export Citation Format

Share Document