SHI induced evolution of surface and wettability of BaF2 thin films

MRS Advances ◽  
2019 ◽  
Vol 4 (28-29) ◽  
pp. 1667-1672 ◽  
Author(s):  
Ratnesh K Pandey ◽  
Tanuj Kumar ◽  
Udai B Singh ◽  
Shikha Awasthi ◽  
Avinash C Pandey
Keyword(s):  
Thin Films ◽  
Contact Angle ◽  
Water Droplet ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Normal Incidence ◽  
Heavy Ion ◽  
Ion Beam Irradiation ◽  
Major Factors ◽  
Shi Irradiation

AbstractWe report evolution of the surface and wetting behavior of Barium fluoride (BaF2) thin films under the effect of swift heavy ion (SHI) irradiation at different fluences. The analogy of this study may be used may be used for the development of dust resistant fabric technology for rural area. The ion irradiation has been performed at normal incidence on the films with Au ions having 100 MeV energy. Further, the wettability of irradiated surfaces is studied through contact angle of water droplet. The value of contact angle of droplet changes with irradiation, it increases from 111° to 123° with the increase in fluence from 5×1011 to 1×1013 ions/cm2. The mechanism of wettability of BaF2 is explained on the basis of increase in contact area of water droplet with surface. SHI irradiation deposits a huge amount of energy in materials due to extreme electronic excitation and it causes a large increase in the temperature of material around the ion track. Ion beam irradiation leads to the large ejection of atoms from the surface which is one of the major factors in increasing the roughness of the surface and thus for the change in contact angle.

scholarly journals The impact of fluence dependent 120 MeV Ag swift heavy ion irradiation on the changes in structural, electronic, and optical properties of AgInSe2 nano-crystalline thin films for optoelectronic applications

RSC Advances ◽  
2021 ◽  
Vol 11 (42) ◽  
pp. 26218-26227
Author(s):  
R. Panda ◽  
S. A. Khan ◽  
U. P. Singh ◽  
R. Naik ◽  
N. C. Mishra
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Ion Irradiation ◽  
Heavy Ion ◽  
Swift Heavy Ion Irradiation ◽  
Heavy Ion Irradiation ◽  
Swift Heavy Ion ◽  
Nano Crystalline ◽  
Shi Irradiation ◽  
The Impact

Swift heavy ion (SHI) irradiation in thin films significantly modifies the structure and related properties in a controlled manner.

Preparation and Modification of Magnetite Thin Films by Swift Kr-Ion Irradiation

2010 ◽  
Vol 160-162 ◽  
pp. 1012-1015
Author(s):  
Jian Rong Sun ◽  
Zhi Guang Wang ◽  
Yu Yu Wang ◽  
Kong Fang Wei ◽  
Tie Long Shen ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Irradiation ◽  
Magnetic Moments ◽  
Heavy Ion ◽  
Crystallographic Structure ◽  
Swift Heavy Ion ◽  
Columnar Defects ◽  
Magnetite Fe3o4 ◽  
Shi Irradiation ◽  
Fe3o4 Thin Film

Polycrystalline magnetite (Fe3O4) thin films is synthesized at low temperature (90 oC) by electroless plating in aqueous solution, and the behavior of the magnetic property of the Fe3O4 thin film irradiated by Kr26+ ions at energy of 2.03 GeV is investigated by magnetization measurements. The initial crystallographic structure of the Fe3O4 remains unaffected after swift heavy ion (SHI) irradiation, but both coercive force and saturation magnetization are sensitive to Kr26+ ion irradiation and exhibit different behaviors depending on the ion fluence range. And SHI irradiation could make the magnetic moments of the Fe3O4 films ordered around the columnar defects and the magnetic moments tend to arrange along the films plane. All modifications of the magnetic properties could be interpreted very well by the effects related to the stress and defects induced by SHI irradiation.

scholarly journals Tailoring the properties of spray deposited V2O5 thin films using swift heavy ion beam irradiation

2020 ◽  
Vol 52 (11) ◽  
pp. 2585-2593 ◽  
Author(s):  
R. Rathika ◽  
M. Kovendhan ◽  
D. Paul Joseph ◽  
Rekha Pachaiappan ◽  
A. Sendil Kumar ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Heavy Ion ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Swift Heavy Ion ◽  
Heavy Ion Beam ◽  
V2o5 Thin Films

scholarly journals Significance of Heavy-Ion Beam Irradiation-Induced Avermectin B1a Production by EngineeredStreptomyces avermitilis

2017 ◽  
Vol 2017 ◽  
pp. 1-13
Author(s):  
Shu-Yang Wang ◽  
Yong-Heng Bo ◽  
Xiang Zhou ◽  
Ji-Hong Chen ◽  
Wen-Jian Li ◽  
...  
Keyword(s):  
Ion Irradiation ◽  
Ion Beam ◽  
Heavy Ion ◽  
Streptomyces Avermitilis ◽  
Specific Productivity ◽  
Original Strain ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Heavy Ion Irradiation ◽  
Heavy Ion Beam

Heavy-ion irradiation technology has advantages over traditional methods of mutagenesis. Heavy-ion irradiation improves the mutation rate, broadens the mutation spectrum, and shortens the breeding cycle. However, few data are currently available regarding its effect onStreptomyces avermitilismorphology and productivity. In this study, the influence of heavy-ion irradiation onS. avermitiliswhen cultivated in approximately 10 L stirred-tank bioreactors was investigated. The specific productivity of the avermectin (AVM) B1a-producing mutantS. avermitilis147-G58 increased notably, from 3885 to 5446 μg/mL, approximately 1.6-fold, compared to the original strain. The mycelial morphology of the mutant fermentation processes was microscopically examined. Additionally, protein and metabolite identification was performed by using SDS-PAGE, 2- and 3-dimensional electrophoresis (2DE and 3DE). The results showed that negative regulation gene deletion of mutants led to metabolic process upregulating expression of protein and improving the productivity of an avermectin B1a. The results showed that the heavy-ion beam irradiation dose that corresponded to optimal production was well over the standard dose, at approximately 80 Gy at 220 AMeV (depending on the strain). This study provides reliable data and a feasible method for increasing AVM productivity in industrial processes.

Characterisation of silicon oxynitride thin films and their response to swift heavy-ion irradiation

2021 ◽  
Author(s):  
Pablo Mota-Santiago ◽  
Allina Nadzri ◽  
Felipe Kremer ◽  
Thomas Bierschenk ◽  
Carlos Eduardo Canto ◽  
...  
Keyword(s):  
Thin Films ◽  
Fine Structure ◽  
Ion Irradiation ◽  
Chemical Vapor ◽  
Heavy Ion ◽  
Density Variation ◽  
Silicon Oxynitride ◽  
Smooth Transition ◽  
Ion Tracks ◽  
Shi Irradiation

Abstract Silicon oxynitrides (a-SiOxNy) are materials whose composition ranges between two binary materials: a-SiO2 and a-Si3N4. In this work, we present a systematic study of the fine structure of the damaged regions produced by swift heavy-ions (SHIs), or ‘ion-tracks’ and quantify the density variation profiles with respect to composition. Thin films were deposited by plasma-enhanced chemical vapor deposition (CVD), where thickness, density, stoichiometry and bond configuration were initially determined. The fine structure and radial size of the ion tracks was determined using small angle X-ray scattering. The tracks exhibit a core-shell cylindrical geometry, with an under-dense core surrounded by an over-dense shell with a smooth transition between the two regions. We observed two trends with composition: a constant increasing ion track radius is observed when the O/Si ratio is below one (0≤x≤1). And saturation of the radial dimensions above this value, being similar to a-SiO2. The IR spectra allowed to quantify the bond configuration and its evolution with fluence. After irradiation, the energy deposited by the SHI irradiation leads to a preferential damage of Si-N bonds. IR spectroscopy also showed the formation of new Si-H bonds with increasing fluences and resulting in a rather complex ion-induced structural modification of the a-SiOxNy network.

Preparation and Modification MnZn Ferrite Thin Films under Swift Heavy Ion (SHI) Irradiation

2011 ◽  
Vol 213 ◽  
pp. 325-329 ◽  
Author(s):  
Jian Rong Sun ◽  
Zhi Guang Wang ◽  
Yu Yu Wang ◽  
Cun Feng Yao ◽  
Kong Fang Wei ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
High Frequency ◽  
Ion Irradiation ◽  
Heavy Ion ◽  
Mnzn Ferrite ◽  
Swift Heavy Ion ◽  
Zn Content ◽  
Ferrite Thin Films ◽  
Shi Irradiation

MnZn ferrite thin films are deposited by alternative sputtering technique from two targets with the composition of MnFe2O4 and ZnFe2O4, and the behavior of the magnetic properties of the MnZn ferrite thin films irradiated by Kr26+ ions at energy of 2.03 GeV is investigated by magnetization measurements. The fabricating and modifying conditions on the performance of the films are studied to improve Ms and reduce Hc of the films, making the films suitable to the applications of high-frequency film devices. For Mn1-xZnxFe2O4 thin films, the Ms increases firstly then decreases and Hc decreases monotonously with increasing Zn content. And both Ms and Hc are sensitive to Kr26+ ion irradiation and exhibit different behaviors depending on the ion fluence range. The modifications of the magnetic properties could be interpreted very well by the effects related to the stress and defects induced by SHI irradiation.

Study of Swift Heavy Ion Irradiation Induced Nanophases of TiO2

2013 ◽  
Vol 24 ◽  
pp. 133-139 ◽  
Author(s):  
Madhavi Thakurdesai ◽  
A. Mahadkar ◽  
Varsha Bhattacharyya
Keyword(s):  
Thin Films ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Heavy Ion ◽  
High Energy ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Non Equilibrium

Ion beam irradiation is a unique non-equilibrium technique for phase formation and material modification. Localized rise in temperature and ultra fast (~1012 s) dissipations of impinging energy make it an attractive tool for nanostructure synthesize. Dense electronic excitation induced spatial and temporal confinement of high energy in a narrow dimension leads the system to a highly non-equilibrium state and the system then relaxes dynamically inducing nucleation of nanocrystals along the latent track. In the present investigation, amorphous thin films of TiO2 are irradiated by 100 MeV Ag ion beam. These irradiated thin films are characterized by Atomic Force Microscopy (AFM), Glancing Angle X-ray Diffraction (GAXRD), Transmission Electron Microscopy (TEM) and UV-VIS absorption spectroscopy. AFM and TEM studies indicate formation of circular nanoparticles of size 10±2 nm in a film irradiated at a fluence of 1×1012 ions.cm-2. Nanophase formation is also inferred from the blueshift observed in UV-VIS absorption band edge.

scholarly journals Enhancement of Ammonia Sensitivity in Swift Heavy Ion Irradiated NanocrystallineSnO2Thin Films

2008 ◽  
Vol 2008 ◽  
pp. 1-4 ◽  
Author(s):  
Sanju Rani ◽  
Somnath C. Roy ◽  
N. K. Puri ◽  
M. C. Bhatnagar ◽  
D. Kanjilal
Keyword(s):  
Thin Films ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Energy Levels ◽  
Sol Gel ◽  
Heavy Ion ◽  
High Energy ◽  
Electronic Energy ◽  
Response Characteristics ◽  
Swift Heavy Ion

Swift heavy ion irradiation is an effective technique to induce changes in the microstructure and electronic energy levels of materials leading to significant modification of properties. Here we report enhancement of ammonia (NH3) sensitivity ofSnO2thin films subjected to high-energyNi+ion irradiation. Sol-gel-derivedSnO2thin films (100 nm thickness) were exposed to 75 MeVNi+ion irradiation, and the gas response characteristics of irradiated films were studied as a function of ion fluence. The irradiated films showedp-type conductivity with a much higher response toNH3compared to other gases such as ethanol. The observed enhancement ofNH3sensitivity is discussed in context of ion beam generated electronic states in theSnO2thin films.

Nitrogen Ion Beam Irradiation on Amorphous Carbon

2007 ◽  
Vol 539-543 ◽  
pp. 3297-3302
Author(s):  
Yoshihisa Watanabe ◽  
Masami Aono ◽  
Nobuaki Kitazawa
Keyword(s):  
Thin Films ◽  
Amorphous Carbon ◽  
Carbon Nitride ◽  
Ion Irradiation ◽  
Ion Beam ◽  
High Energy ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Depth Profiles ◽  
Nitrogen Ion

Both bulk and thin film amorphous carbon were irradiated using a nitrogen ion beam and changes in surface roughness and composition after ion beam irradiation have been studied. Amorphous carbon thin films were prepared from toluene vapor using plasma enhanced chemical vapor deposition. Ion irradiation was performed at room temperature using a nitrogen ion beam and the ion beam energy was varied from 0.2 to 1.5 keV under the constant ion current density. Surface morphology was observed with atomic force microscopy (AFM). Depth profiles of nitrogen in the irradiated specimens were analyzed by X-ray photoelectron spectroscopy (XPS). AFM observations reveal that after the ion beam irradiation the surface of the bulk amorphous carbon becomes rough, while the surface of the amorphous carbon films becomes smooth. However, the notable difference in the surface roughness is hardly observed between low- and high-energy ion irradiation. From XPS studies, it is found that the nitrogen concentration near the surface increases after the ion irradiation for both bulk and thin films and irradiated nitrogen ions are combined with carbon, resulting in formation of carbon nitride layers. Depth profiles of nitrogen show that for the bulk specimen low-energy ion irradiation is more effective for the carbon nitride formation than high-energy ion irradiation, while for the thin films high-energy ions are implanted more deeply than low-energy ions.

Sign in / Sign up

Export Citation Format

Share Document