Giant dielectric constant in Al2O3/TiO2 multilayer films synthesized by atomic layer deposition

MRS Advances ◽  
2018 ◽  
Vol 3 (23) ◽  
pp. 1285-1290
Author(s):  
Takuji Tsujita ◽  
Yukihiro Morita ◽  
Mikihiko Nishitani
Keyword(s):  
Dielectric Constant ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Multilayer Films ◽  
Low Dielectric ◽  
Oxygen Defects ◽  
Giant Dielectric ◽  
Layer Deposition ◽  
Giant Dielectric Constant ◽  
The Relationship

ABSTRACTMultilayer films formed from Al2O3 and TiO2 by atomic layer deposition were systematically studied. The relationship between the electrical characteristics of the films and the type of oxidizer used for the Al2O3 layers was investigated. The results indicated that oxygen defects in TiO2 layer and a highly insulating Al2O3 layer are necessary for realizing a giant dielectric constant and a low dielectric loss. A high electrical resistance of 1.7×108 Ω / diameter of 1 mm and a dielectric constant of 1140 were achieved at 100 Hz by suitable choice of oxidizer for the Al2O3 layer.

Atomic Layer Deposition of Tantalum Nitride on Organosilicate and Organic Polymerbased Low Dielectric Constant Materials

2004 ◽  
Vol 812 ◽  
Author(s):  
Oscar van der Straten ◽  
Yu Zhu ◽  
Jonathan Rullan ◽  
Katarzyna Topol ◽  
Kathleen Dunn ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Tantalum Nitride ◽  
Experimental Methodology ◽  
Low Dielectric Constant ◽  
Adhesion Properties ◽  
Low Dielectric ◽  
Layer Deposition ◽  
Low K

AbstractA previously developed metal-organic atomic layer deposition (ALD) tantalum nitride (TaNx) process was employed to investigate the growth of TaNx liners on low dielectric constant (low-k) materials for liner applications in advanced Cu/low-k interconnect metallization schemes. ALD of TaNx was performed at a substrate temperature of 250°C by alternately exposing low-k materials to tertbutylimido-tris(diethylamido)tantalum (TBTDET) and ammonia (NH3), separated by argon purge steps. The dependence of TaNx film thickness on the number of ALD cycles performed on both organosilicate and organic polymer-based low-k materials was determined and compared to baseline growth characteristics of ALD TaNx on SiO2. In order to assess the effect of the deposition of TaNx on surface roughness, atomic force microscopy (AFM) measurements were carried out prior to and after the deposition of TaNx on the low-k materials. The stability of the interface between TaNx and the low-k materials after thermal annealing at 350°C for 30 minutes was studied by examining interfacial roughness profiles using cross-sectional imaging in a high-resolution transmission electron microscope (HR-TEM). The wetting and adhesion properties of Cu/low-k were quantified using a solid-state wetting experimental methodology after integration of ALD TaNx liners with Cu and low-k dielectrics.

scholarly journals Colossal dielectric constant of NaNbO3 doped BaTiO3 ceramics

2016 ◽  
Vol 34 (2) ◽  
pp. 322-329 ◽  
Author(s):  
Wan Q. Cao ◽  
Ling F. Xu ◽  
Mukhlis M. Ismail ◽  
Li L. Huang
Keyword(s):  
Dielectric Constant ◽  
Dielectric Loss ◽  
Traditional Approach ◽  
Temperature Stability ◽  
Bound State ◽  
High Energy ◽  
Low Dielectric ◽  
Giant Dielectric ◽  
Giant Dielectric Constant ◽  
High Dielectric

AbstractBaTiO3 ceramics doped with 0.40 mol% NaNbO3 were prepared using a traditional approach by sintering at temperature of 1250 °C to 1290 °C. The prepared ceramics was characterized by very good dielectric properties, such as high dielectric constant (1.5 × 105), low dielectric loss (0.1), and good dielectric temperature stability in the −40 °C to 100 °C range for the sample sintered below 1270 °C. The dielectric characteristics obtained with XPS confirmed that Ti4+ ions remain in the state without any change. The huge increase in dielectric constant in NaNbO3 doped BaTiO3 samples occurs when large amount of Ba2+ ions are excited to a high energy bound state of Ba2+ − e or Ba+ to create electron hopping conduction. For samples with the content of NaNbO3 higher than 0.40 mol%, or sintering temperature higher than 1280 °C, compensation effect is dominated by cation vacancies with sharply decreasing dielectric constant and increased dielectric loss. The polaron effect is used to explain the relevant mechanism of giant dielectric constant appearing in the ferroelectric phase.

Electrical Characteristics of Stacked Titanium Oxide/Aluminum Oxide by Atomic Layer Deposition on (NH4)2 S-Treated Gaas

2012 ◽  
Vol 516-517 ◽  
pp. 1945-1948
Author(s):  
Ming Kwei Lee ◽  
Chih Feng Yen ◽  
Sheng Hsiung Yang ◽  
Jung Chan Lee ◽  
Chi Hsuan Cheng ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Electrical Characteristics ◽  
Leakage Currents ◽  
Mos Capacitor ◽  
Native Oxides ◽  
Layer Deposition ◽  
High Dielectric ◽  
P Type

The (NH4)2 S treatment was used for the reduction of native oxides and passivation on GaAs. Atomic layer deposited Al2O3 can further remove the residue native oxides and lower the leakage current on (NH4)2S treated GaAs from self-cleaning and high bandgap. For further stacked with high dielectric constant TiO2 also prepared by atomic layer deposition on Al2O3/(NH4)2S treated p-type GaAs MOS capacitor, the leakage currents can reach 1.9 × 10-8 and 3.1 × 10-6 A/cm2 at ± 2 MV/cm. The dielectric constant is 25.

Structure in multilayer films of zinc sulfide and copper sulfide via atomic layer deposition

2014 ◽  
Vol 32 (1) ◽  
pp. 01A125 ◽  
Author(s):  
Andrew Short ◽  
Leila Jewell ◽  
Anthony Bielecki ◽  
Trevor Keiber ◽  
Frank Bridges ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Zinc Sulfide ◽  
Copper Sulfide ◽  
Atomic Layer ◽  
Multilayer Films ◽  
Layer Deposition
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