scholarly journals Interface effect on dielectric constant of HfO2∕Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition

2007 ◽  
Vol 90 (23) ◽  
pp. 232906 ◽  
Author(s):  
Pan Kwi Park ◽  
Eun-Soo Cha ◽  
Sang-Won Kang
Keyword(s):  
Dielectric Constant ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Interface Effect ◽  
Layer Deposition

Electrical Characteristics of Stacked Titanium Oxide/Aluminum Oxide by Atomic Layer Deposition on (NH4)2 S-Treated Gaas

2012 ◽  
Vol 516-517 ◽  
pp. 1945-1948
Author(s):  
Ming Kwei Lee ◽  
Chih Feng Yen ◽  
Sheng Hsiung Yang ◽  
Jung Chan Lee ◽  
Chi Hsuan Cheng ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Electrical Characteristics ◽  
Leakage Currents ◽  
Mos Capacitor ◽  
Native Oxides ◽  
Layer Deposition ◽  
High Dielectric ◽  
P Type

The (NH4)2 S treatment was used for the reduction of native oxides and passivation on GaAs. Atomic layer deposited Al2O3 can further remove the residue native oxides and lower the leakage current on (NH4)2S treated GaAs from self-cleaning and high bandgap. For further stacked with high dielectric constant TiO2 also prepared by atomic layer deposition on Al2O3/(NH4)2S treated p-type GaAs MOS capacitor, the leakage currents can reach 1.9 × 10-8 and 3.1 × 10-6 A/cm2 at ± 2 MV/cm. The dielectric constant is 25.

Atomic Layer Deposition of Hafnium Oxide Thin Films from Tetrakis(dimethylamino)Hafnium (TDMAH) and Ozone

2003 ◽  
Vol 765 ◽  
Author(s):  
Xinye Liu ◽  
Sasangan Ramanathan ◽  
Thomas E. Seidel
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Aspect Ratio ◽  
Atomic Layer Deposition ◽  
Temperature Dependence ◽  
Deposition Rate ◽  
Hafnium Oxide ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Probe Measurements

AbstractHafnium oxide (HfO2) thin films were synthesized from tetrakis(dimethylamino) hafnium (TDMAH) and ozone (O3) by atomic layer deposition (ALD) on 200 mm silicon wafers. Gradual saturation was observed for TDMAH exposure pulse. However O3 showed better saturation behavior for O3exposure. Yet, 100% step coverage was achieved for ~100nm trenches with aspect ratio of 35. Temperature dependence of the deposition rate was studied at susceptor temperature from 160°C to 420°C. The lowest deposition rate was observed at 320°C. Mercury probe measurements indicated the dielectric constant increased from 16 to 20 as susceptor temperature increased from 200°C to 320°C. Selected comparisons with tetrakis (ethylmethylamino) hafnium (TEMAH) were also made.

Significant Enhancement of the Dielectric Constant through the Doping of CeO2 into HfO2 by Atomic Layer Deposition

2014 ◽  
Vol 97 (4) ◽  
pp. 1164-1169 ◽  
Author(s):  
Woo-Hee Kim ◽  
Min-Kyu Kim ◽  
Il-Kwon Oh ◽  
Wan Joo Maeng ◽  
Taehoon Cheon ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Significant Enhancement ◽  
Layer Deposition

Atomic layer deposition of gadolinium scandate films with high dielectric constant and low leakage current

2006 ◽  
Vol 89 (13) ◽  
pp. 133512 ◽  
Author(s):  
Kyoung H. Kim ◽  
Damon B. Farmer ◽  
Jean-Sebastien M. Lehn ◽  
P. Venkateswara Rao ◽  
Roy G. Gordon
Keyword(s):  
Dielectric Constant ◽  
Atomic Layer Deposition ◽  
Leakage Current ◽  
High Dielectric Constant ◽  
Atomic Layer ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Layer Deposition ◽  
High Dielectric

Atomic Layer Deposition of Tantalum Nitride on Organosilicate and Organic Polymerbased Low Dielectric Constant Materials

2004 ◽  
Vol 812 ◽  
Author(s):  
Oscar van der Straten ◽  
Yu Zhu ◽  
Jonathan Rullan ◽  
Katarzyna Topol ◽  
Kathleen Dunn ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Tantalum Nitride ◽  
Experimental Methodology ◽  
Low Dielectric Constant ◽  
Adhesion Properties ◽  
Low Dielectric ◽  
Layer Deposition ◽  
Low K

AbstractA previously developed metal-organic atomic layer deposition (ALD) tantalum nitride (TaNx) process was employed to investigate the growth of TaNx liners on low dielectric constant (low-k) materials for liner applications in advanced Cu/low-k interconnect metallization schemes. ALD of TaNx was performed at a substrate temperature of 250°C by alternately exposing low-k materials to tertbutylimido-tris(diethylamido)tantalum (TBTDET) and ammonia (NH3), separated by argon purge steps. The dependence of TaNx film thickness on the number of ALD cycles performed on both organosilicate and organic polymer-based low-k materials was determined and compared to baseline growth characteristics of ALD TaNx on SiO2. In order to assess the effect of the deposition of TaNx on surface roughness, atomic force microscopy (AFM) measurements were carried out prior to and after the deposition of TaNx on the low-k materials. The stability of the interface between TaNx and the low-k materials after thermal annealing at 350°C for 30 minutes was studied by examining interfacial roughness profiles using cross-sectional imaging in a high-resolution transmission electron microscope (HR-TEM). The wetting and adhesion properties of Cu/low-k were quantified using a solid-state wetting experimental methodology after integration of ALD TaNx liners with Cu and low-k dielectrics.

Giant dielectric constant in Al2O3/TiO2 multilayer films synthesized by atomic layer deposition

MRS Advances ◽  
2018 ◽  
Vol 3 (23) ◽  
pp. 1285-1290
Author(s):  
Takuji Tsujita ◽  
Yukihiro Morita ◽  
Mikihiko Nishitani
Keyword(s):  
Dielectric Constant ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Multilayer Films ◽  
Low Dielectric ◽  
Oxygen Defects ◽  
Giant Dielectric ◽  
Layer Deposition ◽  
Giant Dielectric Constant ◽  
The Relationship

ABSTRACTMultilayer films formed from Al2O3 and TiO2 by atomic layer deposition were systematically studied. The relationship between the electrical characteristics of the films and the type of oxidizer used for the Al2O3 layers was investigated. The results indicated that oxygen defects in TiO2 layer and a highly insulating Al2O3 layer are necessary for realizing a giant dielectric constant and a low dielectric loss. A high electrical resistance of 1.7×108 Ω / diameter of 1 mm and a dielectric constant of 1140 were achieved at 100 Hz by suitable choice of oxidizer for the Al2O3 layer.

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