Atomic layer deposition HfO2 capping layer effect on porous low dielectric constant materials

2015 ◽  
Vol 354 ◽  
pp. 115-119 ◽  
Author(s):  
Yi-Lung Cheng ◽  
Kai-Chieh Kao ◽  
Chi-Jia Huang ◽  
Giin-Shan Chen ◽  
Jau-Shiung Fang
Keyword(s):  
Dielectric Constant ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Low Dielectric Constant ◽  
Capping Layer ◽  
Low Dielectric ◽  
Layer Deposition ◽  
Layer Effect ◽  
Low Dielectric Constant Materials

Atomic Layer Deposition of Tantalum Nitride on Organosilicate and Organic Polymerbased Low Dielectric Constant Materials

2004 ◽  
Vol 812 ◽  
Author(s):  
Oscar van der Straten ◽  
Yu Zhu ◽  
Jonathan Rullan ◽  
Katarzyna Topol ◽  
Kathleen Dunn ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Tantalum Nitride ◽  
Experimental Methodology ◽  
Low Dielectric Constant ◽  
Adhesion Properties ◽  
Low Dielectric ◽  
Layer Deposition ◽  
Low K

AbstractA previously developed metal-organic atomic layer deposition (ALD) tantalum nitride (TaNx) process was employed to investigate the growth of TaNx liners on low dielectric constant (low-k) materials for liner applications in advanced Cu/low-k interconnect metallization schemes. ALD of TaNx was performed at a substrate temperature of 250°C by alternately exposing low-k materials to tertbutylimido-tris(diethylamido)tantalum (TBTDET) and ammonia (NH3), separated by argon purge steps. The dependence of TaNx film thickness on the number of ALD cycles performed on both organosilicate and organic polymer-based low-k materials was determined and compared to baseline growth characteristics of ALD TaNx on SiO2. In order to assess the effect of the deposition of TaNx on surface roughness, atomic force microscopy (AFM) measurements were carried out prior to and after the deposition of TaNx on the low-k materials. The stability of the interface between TaNx and the low-k materials after thermal annealing at 350°C for 30 minutes was studied by examining interfacial roughness profiles using cross-sectional imaging in a high-resolution transmission electron microscope (HR-TEM). The wetting and adhesion properties of Cu/low-k were quantified using a solid-state wetting experimental methodology after integration of ALD TaNx liners with Cu and low-k dielectrics.

Giant dielectric constant in Al2O3/TiO2 multilayer films synthesized by atomic layer deposition

MRS Advances ◽  
2018 ◽  
Vol 3 (23) ◽  
pp. 1285-1290
Author(s):  
Takuji Tsujita ◽  
Yukihiro Morita ◽  
Mikihiko Nishitani
Keyword(s):  
Dielectric Constant ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Multilayer Films ◽  
Low Dielectric ◽  
Oxygen Defects ◽  
Giant Dielectric ◽  
Layer Deposition ◽  
Giant Dielectric Constant ◽  
The Relationship

ABSTRACTMultilayer films formed from Al2O3 and TiO2 by atomic layer deposition were systematically studied. The relationship between the electrical characteristics of the films and the type of oxidizer used for the Al2O3 layers was investigated. The results indicated that oxygen defects in TiO2 layer and a highly insulating Al2O3 layer are necessary for realizing a giant dielectric constant and a low dielectric loss. A high electrical resistance of 1.7×108 Ω / diameter of 1 mm and a dielectric constant of 1140 were achieved at 100 Hz by suitable choice of oxidizer for the Al2O3 layer.

Curing Process Window and Thermal Stability of Porous MSQ-Based Low-Dielectric-Constant Materials

2004 ◽  
Vol 151 (6) ◽  
pp. F146 ◽  
Author(s):  
Shou-Yi Chang ◽  
Tzu-Jen Chou ◽  
Yung-Cheng Lu ◽  
Syun-Ming Jang ◽  
Su-Jien Lin ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Low Dielectric Constant ◽  
Process Window ◽  
Curing Process ◽  
Low Dielectric ◽  
Low Dielectric Constant Materials ◽  
Thermal Stability Of

Atomic layer deposition of MnOx for Cu capping layer in Cu/low-k interconnects

2014 ◽  
Author(s):  
Hiroaki Kawasaki ◽  
Kenji Matsumoto ◽  
Hiroyuki Nagai ◽  
Yuuki Kikuchi ◽  
Peng Chang
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Capping Layer ◽  
Layer Deposition ◽  
Low K

Low Dielectric Constant Materials for IC Intermetal Dielectric Applications: A Status Report on the Leading Candidates

1996 ◽  
Vol 443 ◽  
Author(s):  
Neil H. Hendricks
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Process Integration ◽  
Electrical Performance ◽  
Low Dielectric Constant ◽  
Status Report ◽  
Structure Property ◽  
Chemical Structures ◽  
Low Dielectric ◽  
Low Dielectric Constant Materials

AbstractFor over two years, intensive efforts at SEMATECH and elsewhere have focused on identifying low dielectric constant (low ε) materials which possess all of the required properties and processing characteristics needed for integration into standard IC fabrication lines. To date, no material candidate has been shown to satisfy this impressive list of requirements. For some candidates, drawbacks related to material properties such as poor thermal stability or electrical performance have been identified; in other cases, problems in process integration, for example difficulties in patterning have stalled progress.In this paper, most of the current leading candidates for the low ε IC IMC application are identified and discussed. An attempt is made to correlate structure/property relationships in these materials with their relative attributes and deficiencies as they relate to the IMD application. Key differences in chemistry and property/processing characteristics are contrasted for low c silicon-oxygen polymers and for purely organic polymers. Novel dielectrics such as porous organic and inorganic thin films are also discussed in terms of their properties and associated process integration challenges. Since the needs for global planarization and low c IMD are occurring within roughly the same generation of minimum feature size (˜ 0.25 μm), the chemical mechanical polishing (CMP) of low dielectric constant thin films and/or of SiO2 layers deposited above them is briefly discussed. Both subtractive metalization and damascene processes are included, and the required low dielectric constant film properties and processing characteristics are contrasted for each process. Finally, the author's views on future trends in low dielectric constant materials development are presented, with an emphasis on identifying the types of chemical structures which may prove viable for this most demanding of all polymer film applications.

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