Structure in multilayer films of zinc sulfide and copper sulfide via atomic layer deposition

2014 ◽  
Vol 32 (1) ◽  
pp. 01A125 ◽  
Author(s):  
Andrew Short ◽  
Leila Jewell ◽  
Anthony Bielecki ◽  
Trevor Keiber ◽  
Frank Bridges ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Zinc Sulfide ◽  
Copper Sulfide ◽  
Atomic Layer ◽  
Multilayer Films ◽  
Layer Deposition

scholarly journals Alumina‐Protected, Durable and Photostable Zinc Sulfide Particles from Scalable Atomic Layer Deposition

2021 ◽  
pp. 2009323
Author(s):  
Thomas Lange ◽  
Sven Reichenberger ◽  
Markus Rohe ◽  
Mathias Bartsch ◽  
Laura Kampermann ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Zinc Sulfide ◽  
Atomic Layer ◽  
Layer Deposition

scholarly journals Plasma enhanced atomic layer deposition of zinc sulfide thin films

2017 ◽  
Vol 35 (1) ◽  
pp. 01B111 ◽  
Author(s):  
Jakob Kuhs ◽  
Thomas Dobbelaere ◽  
Zeger Hens ◽  
Christophe Detavernier
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Zinc Sulfide ◽  
Atomic Layer ◽  
Layer Deposition

Atomic layer deposition of copper sulfide thin films

2016 ◽  
Vol 600 ◽  
pp. 103-108 ◽  
Author(s):  
Nathanaelle Schneider ◽  
Daniel Lincot ◽  
Frédérique Donsanti
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Copper Sulfide ◽  
Atomic Layer ◽  
Layer Deposition

Transparent Ohmic Contact for CIGS Solar Cells Based on p-Type Aluminum Copper Sulfide Material Synthesized by Atomic Layer Deposition

2018 ◽  
Vol 1 (12) ◽  
pp. 7220-7229
Author(s):  
N. Schneider ◽  
L. Duclaux ◽  
M. Bouttemy ◽  
C. Bugot ◽  
F. Donsanti ◽  
...  
Keyword(s):  
Solar Cells ◽  
Atomic Layer Deposition ◽  
Ohmic Contact ◽  
Copper Sulfide ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Cigs Solar Cells ◽  
P Type

Giant dielectric constant in Al2O3/TiO2 multilayer films synthesized by atomic layer deposition

MRS Advances ◽  
2018 ◽  
Vol 3 (23) ◽  
pp. 1285-1290
Author(s):  
Takuji Tsujita ◽  
Yukihiro Morita ◽  
Mikihiko Nishitani
Keyword(s):  
Dielectric Constant ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Multilayer Films ◽  
Low Dielectric ◽  
Oxygen Defects ◽  
Giant Dielectric ◽  
Layer Deposition ◽  
Giant Dielectric Constant ◽  
The Relationship

ABSTRACTMultilayer films formed from Al2O3 and TiO2 by atomic layer deposition were systematically studied. The relationship between the electrical characteristics of the films and the type of oxidizer used for the Al2O3 layers was investigated. The results indicated that oxygen defects in TiO2 layer and a highly insulating Al2O3 layer are necessary for realizing a giant dielectric constant and a low dielectric loss. A high electrical resistance of 1.7×108 Ω / diameter of 1 mm and a dielectric constant of 1140 were achieved at 100 Hz by suitable choice of oxidizer for the Al2O3 layer.

Influence of Different Annealing Ambients on the Properties of Zinc Sulfide Prepared by Atomic Layer Deposition

2013 ◽  
Vol 52 (10S) ◽  
pp. 10MB19
Author(s):  
Dongjun Yoo ◽  
Seung Chan Heo ◽  
Moon Suk Choi ◽  
Dohyung Kim ◽  
Chulwon Chung ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Zinc Sulfide ◽  
Atomic Layer ◽  
Layer Deposition

Structural, optical, and electronic stability of copper sulfide thin films grown by atomic layer deposition

2013 ◽  
Vol 6 (6) ◽  
pp. 1868 ◽  
Author(s):  
Alex B. F. Martinson ◽  
Shannon C. Riha ◽  
Elijah Thimsen ◽  
Jeffrey W. Elam ◽  
Michael J. Pellin
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Copper Sulfide ◽  
Atomic Layer ◽  
Layer Deposition
Sign in / Sign up

Export Citation Format

Share Document