Study of the effect of the deposition RF power on the characteristics of microcrystalline Silicon-Germanium thin films produced by PECVD

MRS Advances ◽  
2018 ◽  
Vol 3 (64) ◽  
pp. 3939-3947
Author(s):  
Arturo Torres ◽  
Mario Moreno ◽  
Pedro Rosales ◽  
Miguel Domínguez ◽  
Alfonso Torres ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Germanium ◽  
Optical Band Gap ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
Rf Power ◽  
Microcrystalline Silicon ◽  
Film Properties ◽  
Silicon And Germanium

ABSTRACTHydrogenated microcrystalline Silicon-Germanium (μc-SiGe:H) thin films were deposited using the Plasma Enhanced Chemical Vapor Deposition (PECVD) technique from a gas mixture of SiH4, GeH4, H2 and Ar at a substrate temperature of 200 ° C. The films were deposited at a pressure of 1.5 Torr, while the RF power was varied in the range of 20 W to 35 W. Structural, optical and electrical characterization was performed in the films, Fourier Transform Infrared Spectroscopy (FTIR) was performed in order to analyze the hydrogen bonding of silicon and germanium, while Raman spectroscopy was used in order to analyze the crystallinity of the films. Through the optical and electrical characterization of the films, parameters such as the optical band gap (Eg) and the activation energy (EA) were obtained, respectively. The conductivity of the films changed up two to orders of magnitude from dark conditions to illumination AM 1.5. Finally, the correlation between deposition RF power and the film properties is presented.

Amorphous Carbon Thin Films Deposited by Thermal CVD Using Camphoric Carbon as Precursor

2011 ◽  
Vol 403-408 ◽  
pp. 646-650
Author(s):  
A.N. Fadzilah ◽  
Nur Ayuni Tahir ◽  
Mohamad Rusop
Keyword(s):  
Thin Films ◽  
Amorphous Carbon ◽  
Optical Band Gap ◽  
Chemical Vapor ◽  
Solar Cell Device ◽  
Illumination Condition ◽  
Precursor Material ◽  
Current Voltage ◽  
Different Temperatures

This paper reports on the deposition of semiconducting amorphous carbon (p-aC) films fabricated onto the glass substrate and n-type silicon by Thermal Chemical Vapor Deposition (CVD) using natural source of camphoric carbon as the precursor material. Those samples were deposited at 5 different temperatures from 3500C to 5500C. From the characterization of the electrical properties using current-voltage (I-V) measurement, I-V graph was modeled for both conditions, where for a-C thin films linear graph (ohmic) were performed, whereas for the device, a rectifying graph were obtained. The analyze revealed that conductivity shows an increment as deposition temperature increased, both in dark and under illumination condition. On the other hand, the solar cell device of the p-aC/n-Si achieved an efficiency of 0.1111% for the a-C deposited at 3500C. Other than that, optical properties were also characterized by using UV-VIS-NIR system. The same trend of optical and electrical can be seen when the measurement from the Tauc’s plot expose a decreasing value of optical band gap as temperature increase.

Structural, Optical and Electrical Characterization of Thermally Evaporated TlBr Thin Films

2009 ◽  
Vol 1164 ◽  
Author(s):  
Natália Destefano ◽  
Marcelo Mulato
Keyword(s):  
Thin Films ◽  
Optical Band Gap ◽  
Thermal Evaporation ◽  
Electrical Characterization ◽  
Current Ratio ◽  
X Ray ◽  
Electrical Resistivities ◽  
Order Of Magnitude ◽  
Deposition Height

AbstractThis paper presents the study related to the production of TlBr thin films. Films produced by thermal evaporation present better structural properties than those produced by spray pyrolysis. The main XRD peak of the evaporated films correspond to the (100) plane, whose structure is columnar as revealed by cross section SEM. The thickness decreases with increasing deposition height. Optical band gap of 3.0 eV and electrical resistivities about 109 Ωcm were obtained. EDS reveals a reduction in the amount of Br in the final films. One order of magnitude was obtained for the photo-to-dark current ratio when irradiation in the medical diagnosis X-ray mammography energy range was used.

Vapor Deposition Polymerization and Electrical Characterization of TPD Thin Films

2011 ◽  
Vol E94-C (2) ◽  
pp. 157-163 ◽  
Author(s):  
Masakazu MUROYAMA ◽  
Ayako TAJIRI ◽  
Kyoko ICHIDA ◽  
Seiji YOKOKURA ◽  
Kuniaki TANAKA ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Electrical Characterization
Sign in / Sign up

Export Citation Format

Share Document