Behavior of nitrogen-related luminescence centers in laser-cut single-crystalline diamond under irradiation with keV electron beam

MRS Advances ◽  
2017 ◽  
Vol 2 (43) ◽  
pp. 2355-2360
Author(s):  
Kenji Maruoka ◽  
Taiki Naito ◽  
Osamu Maida ◽  
Toshimichi Ito
Keyword(s):  
Electron Beam ◽  
Nitrogen Atom ◽  
Microwave Plasma ◽  
Relative Number ◽  
Defect States ◽  
Single Crystalline ◽  
Interstitial Carbon ◽  
Luminescence Centers ◽  
Irradiation Process ◽  
Interstitial Carbon Atom

ABSTRACTWe have found that several nitrogen-related luminescence centers appear at 389 nm, 503 nm (H3 center), 575 nm (NV0 center), 637 nm (NV- center) in single-crystalline Ib diamond cut by means of a YAG laser irradiation process, followed by a suitable hydrogen microwave-plasma treatment, and that cathodoluminescence peaks related to these centers substantially change in intensity by irradiating the sample with 15-keV electron beam (EB). The relative number of 389-nm centers originating from a pair of a substitutional nitrogen atom and an adjacent interstitial carbon atom increased while the concentrations of the vacancy-related centers were reduced with increasing 15-keV EB doses. These facts indicate that both the process-induced self-interstitials and the vacancies in the diamond rather easily moved to more preferential positions to form their stabler defect states, being suggestive of possibility to control densities of NV and NV-related centers.

Nitrogen-Carbon Interactions in Optical Defects in Silicon

1985 ◽  
Vol 59 ◽  
Author(s):  
A. Dörnen ◽  
R. Sauer ◽  
G. Pensl
Keyword(s):  
Nitrogen Atom ◽  
Recent Literature ◽  
Isotope Effects ◽  
Uniaxial Stress ◽  
Local Mode ◽  
Defect Model ◽  
Quantum Energy ◽  
Interstitial Carbon ◽  
Phonon Transition ◽  
Interstitial Carbon Atom

ABSTRACTWe report five photoluminescence lines N1 through N5 in silicon which emerge after sequential nitrogen and carbon implantation. Studied is in particular the 0.7456 eV (N1) electronic-vibronic spectrum. Single nitrogen and carbon atoms in the defect are identified by isotope shifts of the no-phonon transition and of a local mode satellite with vibration quantum energy ħω= 122.9 meV. Uniaxial stress or Zeeman measurements yield monoclinic I (C1h) or trigonal (C3v) symmetry, respectively, of the optical defect. Comparing the energy of the local mode and its isotope effects with recent literature data on the nitrogen 963 cm−1 IR vibrational absorption line we discuss a defect model involving a substitutional nitrogen atom modified by an interstitial carbon atom.

Line-Shaped Electron Beam System and Soi Films Prepared by The System

1985 ◽  
Vol 45 ◽  
Author(s):  
Y. Hayafuji ◽  
A. Shibata ◽  
T. Yanada ◽  
A. Sawada ◽  
S. Usui ◽  
...  
Keyword(s):  
Electron Beam ◽  
Crystalline Silicon ◽  
Semiconductor Industry ◽  
High Energy ◽  
Silicon Films ◽  
High Energy Density ◽  
Present System ◽  
Single Crystalline ◽  
Beam System ◽  
Scanning Area

ABSTRACTThe line-shaped electron beam annealing system which generates an electron beam of a length of 4 cm and a width af less than 100 um with a high energy density exceeding well over 100 kW/cm2 was developed for the first time with a purpose of SOI processing as its primary application. An pccelaration voltage of up to 20 kV can be used in this system. Seeded single crystalline islands with areas several mm long and 30 to 100 um in width were obtained by a single scan of the electron beam. The electron beam is generated in a pulsed way in the system due to the power restriction of the power supplies. An area of 4×5 cm2 was processed by a single scan of an electron beam at a sample speed of 530 cm/sec and a beam duration of 9.5 msec. The scanning area for one scan is determined by the beam length and the duration of the beam and sample speed.The present system could give single crystalline silicon films without any grain boundaries. The electron mobility of the electron beam recrystallized films, obtained from FETs made as a vehicle to test the electrical properties of the films, was comparable to that of the bulk silicon. A very rapid migration of silicon atoms in solid polycrystalline silicon films, which is controllable by process parameters, was also found with a migration speed of the order of 1 m/sec in a capped structure. The present electron beam system is useful in studying basic mechanisms of crystal growth in thin films. The system can have a very high throughput, a desirable feature in semiconductor industry. The present system can also be used to study the rapid thermal treatment of materials other than semiconductors including rapidly solidified materials.

Study on Electron Beam Curing of APTES Functionalized MWNTs/ Epoxy Composites

2011 ◽  
Vol 194-196 ◽  
pp. 1607-1610
Author(s):  
Yan Yan Lu ◽  
Hua Li ◽  
He Zhou Liu
Keyword(s):  
Mechanical Properties ◽  
Electron Beam ◽  
Epoxy Resin ◽  
Conversion Rate ◽  
Epoxy Composites ◽  
Pure Epoxy ◽  
Gel Content ◽  
Electron Beam Curing ◽  
Irradiation Process

In this study, we prepared the 3-aminopropyltriethoxysilane (APTES) functionalized MWNTs/epoxy composites by electron beam (EB) irradiation process. The modified MWNTs were characterized with SEM-EDS and FTIR. The gel content and conversion rate of epoxide groups of the EB cured pure epoxy resin and the APTES functionalized MWNTs/epoxy composites were measured and discussed. And the mechanical properties of the EB cured composites were also characterized. With addition of 0.25wt% APTES functionalized MWNTs, the Vicker’s hardness of the EB cured composite increased 100.02% compared with pure epoxy.

Flame-retardant cotton fabrics modified with phosphoramidate derivative via electron beam irradiation process

2019 ◽  
pp. 152808371988181
Author(s):  
Ying Liu ◽  
Li Zhou ◽  
Fang Ding ◽  
Shanshan Li ◽  
Rong Li ◽  
...  
Keyword(s):  
Electron Beam ◽  
Flame Retardant ◽  
Photoelectron Spectroscopy ◽  
Electron Beam Irradiation ◽  
Cotton Fabrics ◽  
Beam Irradiation ◽  
Limiting Oxygen Index ◽  
Flammability Test ◽  
Lower Temperature ◽  
Irradiation Process

In this study, a novel flame-retardant diethyl methacryloylphosphoramidate containing phosphorus and nitrogen was synthesized and characterized by Fourier transform infrared and nuclear magnetic resonance. The synthesized compound was grafted onto cotton fabrics using electron beam irradiation and pad dry cure processes. Scanning electron microscope and X-ray photoelectron spectroscopy were used to characterize the surfaces of the modified cotton fabrics to confirm that diethyl methacryloylphosphoramidate was grafted on cotton fabrics successfully. Both electron beam–cotton and pad dry cure–cotton exhibited efficient flame retardancy which was proved by limiting oxygen index and vertical flammability test. Thermogravimetric analysis results showed that both electron beam-cotton and pad dry cure–cotton degraded at lower temperature and produced higher yields at 600℃. The tensile loss of electron beam–cotton was lower than that of pad dry cure–cotton, and within the acceptable range in flame retardant finishing.

Relationship of Field Emission Characteristics on Process Gas Nitrogen Content in Nitrogen Doped Diamond Films

1998 ◽  
Vol 508 ◽  
Author(s):  
A.T. Sowers ◽  
B.L. Ward ◽  
R.J. Nemanich
Keyword(s):  
Field Emission ◽  
Microwave Plasma ◽  
Diamond Surface ◽  
High Threshold ◽  
Emission Characteristics ◽  
Defect States ◽  
Nitrogen Doped ◽  
Field Emission Properties ◽  
Process Gas ◽  
Relationship Of

AbstractThis study explores the field emission properties of nitrogen doped diamond grown by microwave plasma CVD. Several diamond samples were grown on silicon under varying conditions. With certain process parameters, films can be grown which exhibit photoluminescence bands at 1.945eV and 2.154eV that are attributed to single substitutional nitrogen. Field emission characteristics were measured in ultrahigh vacuum with a position variable anode. For samples grown with gas phase [N]/[C] ratios less than 16, damage from micro-arcs occurred during the field emission measurements. Samples grown at higher [N]/[C] content could be measured without damage. These measurements indicate relatively high threshold fields (>100V/µm) for electron emission. From the data, two possible field emission mechanisms are presented. Conducting defect states in the bandgap of diamond may provide a source of electrons to the emitting diamond surface.

scholarly journals The Fe–V Cofactor of Vanadium Nitrogenase Contains an Interstitial Carbon Atom

2015 ◽  
Vol 54 (45) ◽  
pp. 13249-13252 ◽  
Author(s):  
Julian A. Rees ◽  
Ragnar Bjornsson ◽  
Julia Schlesier ◽  
Daniel Sippel ◽  
Oliver Einsle ◽  
...  
Keyword(s):  
Carbon Atom ◽  
Interstitial Carbon ◽  
Vanadium Nitrogenase ◽  
Interstitial Carbon Atom

[Re12CS17(CN)6]n− (n=6, 8): A Sulfido-Cyanide Rhenium Cluster with an Interstitial Carbon Atom

2005 ◽  
Vol 44 (42) ◽  
pp. 6867-6871 ◽  
Author(s):  
Yuri V. Mironov ◽  
Nikolai G. Naumov ◽  
Svetlana G. Kozlova ◽  
Sung-Jin Kim ◽  
Vladimir E. Fedorov
Keyword(s):  
Carbon Atom ◽  
Interstitial Carbon ◽  
Rhenium Cluster ◽  
Interstitial Carbon Atom

Interstitial Carbon Related Defects in Low-Temperature Irradiated Si: FTIR and DLTS Studies

2005 ◽  
Vol 108-109 ◽  
pp. 261-266 ◽  
Author(s):  
Lyudmila I. Khirunenko ◽  
Yu.V. Pomozov ◽  
N.A. Tripachko ◽  
Mikhail G. Sosnin ◽  
A.V. Duvanskii ◽  
...  
Keyword(s):  
Low Temperature ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Absorption Bands ◽  
Interstitial Carbon ◽  
Intermediate States ◽  
Lower Activation ◽  
Radiation Induced ◽  
Transient Spectroscopy ◽  
Interstitial Carbon Atom

The evolution of radiation-induced carbon-related defects in low temperature irradiated oxygen containing silicon has been studied by means of Fourier transform infrared absorption spectroscopy (FTIR) and deep level transient spectroscopy (DLTS). FTIR measurements have shown that annealing of interstitial carbon atom Ci, occurring in the temperature interval 260-300 K, results in a gradual appearance of a number of new absorption bands along with the well known bands related to the CiOi complex. The new bands are positioned at 812, 910.2, 942.6, 967.4 and 1086 cm-1. It has been found that the pair of bands at 910 and 942 cm-1 as well as another set of the bands at 812, 967.4 and 1086 cm-1 display identical behavior upon isochronal annealing, i.e. the bands in both groups appear and disappear simultaneously. The disappearance of the first group occurs at T = 285-300 K while the second group anneals out at T = 310-340 K. These processes are accompanied by an increase in intensity of the bands related to CiOi. It is suggested that intermediate states (precursors) are formed upon the transformation from a single (isolated) Ci atom to a stable CiOi defect. The results obtained in DLTS studies are in agreement with the FTIR data and show unambiguously the formation of CiOi precursors with slightly lower activation energy for the hole emission as compare to that for the main CiOi state.

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