Nitrogen-Carbon Interactions in Optical Defects in Silicon

1985 ◽  
Vol 59 ◽  
Author(s):  
A. Dörnen ◽  
R. Sauer ◽  
G. Pensl
Keyword(s):  
Nitrogen Atom ◽  
Recent Literature ◽  
Isotope Effects ◽  
Uniaxial Stress ◽  
Local Mode ◽  
Defect Model ◽  
Quantum Energy ◽  
Interstitial Carbon ◽  
Phonon Transition ◽  
Interstitial Carbon Atom

ABSTRACTWe report five photoluminescence lines N1 through N5 in silicon which emerge after sequential nitrogen and carbon implantation. Studied is in particular the 0.7456 eV (N1) electronic-vibronic spectrum. Single nitrogen and carbon atoms in the defect are identified by isotope shifts of the no-phonon transition and of a local mode satellite with vibration quantum energy ħω= 122.9 meV. Uniaxial stress or Zeeman measurements yield monoclinic I (C1h) or trigonal (C3v) symmetry, respectively, of the optical defect. Comparing the energy of the local mode and its isotope effects with recent literature data on the nitrogen 963 cm−1 IR vibrational absorption line we discuss a defect model involving a substitutional nitrogen atom modified by an interstitial carbon atom.

Behavior of nitrogen-related luminescence centers in laser-cut single-crystalline diamond under irradiation with keV electron beam

MRS Advances ◽  
2017 ◽  
Vol 2 (43) ◽  
pp. 2355-2360
Author(s):  
Kenji Maruoka ◽  
Taiki Naito ◽  
Osamu Maida ◽  
Toshimichi Ito
Keyword(s):  
Electron Beam ◽  
Nitrogen Atom ◽  
Microwave Plasma ◽  
Relative Number ◽  
Defect States ◽  
Single Crystalline ◽  
Interstitial Carbon ◽  
Luminescence Centers ◽  
Irradiation Process ◽  
Interstitial Carbon Atom

ABSTRACTWe have found that several nitrogen-related luminescence centers appear at 389 nm, 503 nm (H3 center), 575 nm (NV0 center), 637 nm (NV- center) in single-crystalline Ib diamond cut by means of a YAG laser irradiation process, followed by a suitable hydrogen microwave-plasma treatment, and that cathodoluminescence peaks related to these centers substantially change in intensity by irradiating the sample with 15-keV electron beam (EB). The relative number of 389-nm centers originating from a pair of a substitutional nitrogen atom and an adjacent interstitial carbon atom increased while the concentrations of the vacancy-related centers were reduced with increasing 15-keV EB doses. These facts indicate that both the process-induced self-interstitials and the vacancies in the diamond rather easily moved to more preferential positions to form their stabler defect states, being suggestive of possibility to control densities of NV and NV-related centers.

scholarly journals The Fe–V Cofactor of Vanadium Nitrogenase Contains an Interstitial Carbon Atom

2015 ◽  
Vol 54 (45) ◽  
pp. 13249-13252 ◽  
Author(s):  
Julian A. Rees ◽  
Ragnar Bjornsson ◽  
Julia Schlesier ◽  
Daniel Sippel ◽  
Oliver Einsle ◽  
...  
Keyword(s):  
Carbon Atom ◽  
Interstitial Carbon ◽  
Vanadium Nitrogenase ◽  
Interstitial Carbon Atom

[Re12CS17(CN)6]n− (n=6, 8): A Sulfido-Cyanide Rhenium Cluster with an Interstitial Carbon Atom

2005 ◽  
Vol 44 (42) ◽  
pp. 6867-6871 ◽  
Author(s):  
Yuri V. Mironov ◽  
Nikolai G. Naumov ◽  
Svetlana G. Kozlova ◽  
Sung-Jin Kim ◽  
Vladimir E. Fedorov
Keyword(s):  
Carbon Atom ◽  
Interstitial Carbon ◽  
Rhenium Cluster ◽  
Interstitial Carbon Atom

Uniaxial stress effect on the4A2 →4T2 zero-phonon transition of Cr3+ in α-Al2O3

1975 ◽  
Vol 69 (1) ◽  
pp. 33-43 ◽  
Author(s):  
R. Louat ◽  
R. Lacroix ◽  
E. Duval ◽  
B. Champagnon
Keyword(s):  
Uniaxial Stress ◽  
Stress Effect ◽  
Α Al2o3 ◽  
Phonon Transition

Interstitial Carbon Related Defects in Low-Temperature Irradiated Si: FTIR and DLTS Studies

2005 ◽  
Vol 108-109 ◽  
pp. 261-266 ◽  
Author(s):  
Lyudmila I. Khirunenko ◽  
Yu.V. Pomozov ◽  
N.A. Tripachko ◽  
Mikhail G. Sosnin ◽  
A.V. Duvanskii ◽  
...  
Keyword(s):  
Low Temperature ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Absorption Bands ◽  
Interstitial Carbon ◽  
Intermediate States ◽  
Lower Activation ◽  
Radiation Induced ◽  
Transient Spectroscopy ◽  
Interstitial Carbon Atom

The evolution of radiation-induced carbon-related defects in low temperature irradiated oxygen containing silicon has been studied by means of Fourier transform infrared absorption spectroscopy (FTIR) and deep level transient spectroscopy (DLTS). FTIR measurements have shown that annealing of interstitial carbon atom Ci, occurring in the temperature interval 260-300 K, results in a gradual appearance of a number of new absorption bands along with the well known bands related to the CiOi complex. The new bands are positioned at 812, 910.2, 942.6, 967.4 and 1086 cm-1. It has been found that the pair of bands at 910 and 942 cm-1 as well as another set of the bands at 812, 967.4 and 1086 cm-1 display identical behavior upon isochronal annealing, i.e. the bands in both groups appear and disappear simultaneously. The disappearance of the first group occurs at T = 285-300 K while the second group anneals out at T = 310-340 K. These processes are accompanied by an increase in intensity of the bands related to CiOi. It is suggested that intermediate states (precursors) are formed upon the transformation from a single (isolated) Ci atom to a stable CiOi defect. The results obtained in DLTS studies are in agreement with the FTIR data and show unambiguously the formation of CiOi precursors with slightly lower activation energy for the hole emission as compare to that for the main CiOi state.

scholarly journals Radiation‐induced interstitial carbon atom in silicon: Effect of charge state on annealing characteristics

2017 ◽  
Vol 214 (7) ◽  
pp. 1700262 ◽  
Author(s):  
Stanislau B. Lastovskii ◽  
Vasilii E. Gusakov ◽  
Vladimir P. Markevich ◽  
Anthony R. Peaker ◽  
Hanna S. Yakushevich ◽  
...  
Keyword(s):  
Carbon Atom ◽  
Charge State ◽  
Interstitial Carbon ◽  
Radiation Induced ◽  
Interstitial Carbon Atom

[Re12CS17(CN)6]n− (n=6, 8): A Sulfido-Cyanide Rhenium Cluster with an Interstitial Carbon Atom

2005 ◽  
Vol 117 (42) ◽  
pp. 7027-7031 ◽  
Author(s):  
Yuri V. Mironov ◽  
Nikolai G. Naumov ◽  
Svetlana G. Kozlova ◽  
Sung-Jin Kim ◽  
Vladimir E. Fedorov
Keyword(s):  
Carbon Atom ◽  
Interstitial Carbon ◽  
Rhenium Cluster ◽  
Interstitial Carbon Atom

scholarly journals Effect of the Fermi level position on the annealing characteristic of interstitial carbon defect in silicon

2018 ◽  
Vol 62 (5) ◽  
pp. 540-545
Author(s):  
F. P. Korshunov ◽  
S. В. Lastovskii ◽  
H. S. Yakushevich ◽  
V. P. Markevich ◽  
L. I. Murin
Keyword(s):  
Charge State ◽  
Positive Charge ◽  
Deep Level ◽  
Experimental Results ◽  
Migration Ability ◽  
Interstitial Carbon ◽  
Transient Spectra ◽  
Neutral Charge State ◽  
Interstitial Carbon Atom ◽  
Α Particles

We present experimental results showing that the migration ability of interstitial carbon atom (Сi) in silicon depends noticeably on its charge state. The experimental results were obtained from the analysis of deep level transient spectra in n+–p diodes subjected to irradiation with 4–6 MeV electrons or α-particles at T < 273 k and subsequent heat-treatments in the temperature range 280–330 k under reverse bias and without it. It has been found that in the positive charge state the Сi migration energy is 0.88 ± 0.02 eV, while in the neutral charge state it is lowered down to 0.73–0.74 eV.

scholarly journals The Fe–V Cofactor of Vanadium Nitrogenase Contains an Interstitial Carbon Atom

2015 ◽  
Vol 127 (45) ◽  
pp. 13447-13450 ◽  
Author(s):  
Julian A. Rees ◽  
Ragnar Bjornsson ◽  
Julia Schlesier ◽  
Daniel Sippel ◽  
Oliver Einsle ◽  
...  
Keyword(s):  
Carbon Atom ◽  
Interstitial Carbon ◽  
Vanadium Nitrogenase ◽  
Interstitial Carbon Atom
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