Relationship of Field Emission Characteristics on Process Gas Nitrogen Content in Nitrogen Doped Diamond Films

1998 ◽  
Vol 508 ◽  
Author(s):  
A.T. Sowers ◽  
B.L. Ward ◽  
R.J. Nemanich
Keyword(s):  
Field Emission ◽  
Microwave Plasma ◽  
Diamond Surface ◽  
High Threshold ◽  
Emission Characteristics ◽  
Defect States ◽  
Nitrogen Doped ◽  
Field Emission Properties ◽  
Process Gas ◽  
Relationship Of

AbstractThis study explores the field emission properties of nitrogen doped diamond grown by microwave plasma CVD. Several diamond samples were grown on silicon under varying conditions. With certain process parameters, films can be grown which exhibit photoluminescence bands at 1.945eV and 2.154eV that are attributed to single substitutional nitrogen. Field emission characteristics were measured in ultrahigh vacuum with a position variable anode. For samples grown with gas phase [N]/[C] ratios less than 16, damage from micro-arcs occurred during the field emission measurements. Samples grown at higher [N]/[C] content could be measured without damage. These measurements indicate relatively high threshold fields (>100V/µm) for electron emission. From the data, two possible field emission mechanisms are presented. Conducting defect states in the bandgap of diamond may provide a source of electrons to the emitting diamond surface.

Relationship of Field Emission Characteristics on Process Gas Nitrogen Content in Nitrogen Doped Diamond Films

1998 ◽  
Vol 509 ◽  
Author(s):  
A.T. Sowers ◽  
B.L. Ward ◽  
R.J. Nemanich
Keyword(s):  
Field Emission ◽  
Microwave Plasma ◽  
Diamond Surface ◽  
High Threshold ◽  
Emission Characteristics ◽  
Defect States ◽  
Nitrogen Doped ◽  
Field Emission Properties ◽  
Process Gas ◽  
Relationship Of

AbstractThis study explores the field emission properties of nitrogen doped diamond grown by microwave plasma CVD. Several diamond samples were grown on silicon under varying conditions. With certain process parameters, films can be grown which exhibit photoluminescence bands at 1.945eV and 2.154eV that are attributed to single substitutional nitrogen. Field emission characteristics were measured in ultrahigh vacuum with a position variable anode. For samples grown with gas phase [N]/[C] ratios less than 16, damage from micro-arcs occurred during the field emission measurements. Samples grown at higher [N]/[C] content could be measured without damage. These measurements indicate relatively high threshold fields (>100V/νm) for electron emission. From the data, two possible field emission mechanisms are presented. Conducting defect states in the bandgap of diamond may provide a source of electrons to the emitting diamond surface.

Effect of Different Metal Composite Layer on Field Emission Properties of Diamond Film

2012 ◽  
Vol 586 ◽  
pp. 181-184
Author(s):  
Xin Yue Zhang ◽  
Hua Li Ma ◽  
Yong Mei Zhao ◽  
Ning Yao ◽  
Fan Guang Zeng
Keyword(s):  
Field Emission ◽  
Microwave Plasma ◽  
Composite Layer ◽  
Chemical Vapor ◽  
Diamond Surface ◽  
Metal Composite ◽  
Emission Properties ◽  
Plasma Chemical Vapor Deposition ◽  
Field Emission Properties ◽  
Field Emission Performance

High density、uniform particles diamond films were synthesized by microwave plasma chemical vapor deposition (MWPCVD) method on Si (100). In order to improve field emission properties of thin films, sputtering the metal Ti、Al、Mo、Ni on the diamond surface respectively，and compared the kinds of diamond/metal composite film of field emission performance. The results show that the field emission properties of diamond / metal Ti composite thin film are better. The possible mechanism will be discussed in this study.

Electronic Structure and Field‐Emission Properties of Nitrogen‐Doped Carbon Nanotubes

2006 ◽  
Vol 14 (2-3) ◽  
pp. 151-164 ◽  
Author(s):  
A. V. Okotrub ◽  
L. G. Bulusheva ◽  
V. V. Belavin ◽  
A. G. Kudashov ◽  
A. V. Gusel'nikov ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Electronic Structure ◽  
Field Emission ◽  
Emission Properties ◽  
Nitrogen Doped ◽  
Field Emission Properties ◽  
Nitrogen Doped Carbon

The Field Emission of Globe-Like Diamond Microcrystalline Aggregate Films

2011 ◽  
Vol 279 ◽  
pp. 88-92
Author(s):  
Jin Hai Gao ◽  
Wu Qing Zhang ◽  
Zhen Li
Keyword(s):  
Field Emission ◽  
Electric Fields ◽  
Current Density ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Emission Properties ◽  
Plasma Chemical Vapor Deposition ◽  
Field Emission Properties ◽  
Turn On

The globe-like diamond microcrystalline aggregates films were fabricated by microwave plasma chemical vapor deposition method. The field emission properties and emission stability of the films were tested using a diode structure in vacuum. It was found that the globe-like diamond microcrystalline aggregates films exhibited good electron emission properties and stability. The turn-on field of 0. 55 V /μm and the current density of 11mA/cm2 at the electric fields of 2.73V/μm were obtained. At the successive operator circles, the turn-on field tends to stabilize at 1. 08V /μm and the current density of 6.6 mA/cm2 is obtained.

Investigation of the Field Emission Stability of Sphere-Like Diamond Microcrystalline-Aggregates Films

2014 ◽  
Vol 1035 ◽  
pp. 3-6
Author(s):  
Jin Hai Gao ◽  
Zhen Li ◽  
Wu Qing Zhang
Keyword(s):  
Field Emission ◽  
Indium Tin Oxide ◽  
Microwave Plasma ◽  
Metal Layer ◽  
Chemical Vapor ◽  
Emission Current Density ◽  
Diffraction Spectrum ◽  
Raman Scattering Spectroscopy ◽  
Emission Properties ◽  
Field Emission Properties

The sphere-like diamond microcrystalline-aggregates were fabricated by microwave plasma chemical vapor deposition (MPCVD) method. The ceramic with a Ti metal layer was used as substrates. The fabricated diamond microcrystalline aggregates were evaluated by Raman scattering spectroscopy, x-ray diffraction spectrum (XRD), scanning electron microscopy (SEM). The field emission properties were tested by using a diode structure in a vacuum. A phosphor-coated indium tin oxide (ITO) anode was used for observing and characterizing the field emission. It was found that the sphere-like diamond microcrystalline-aggregates films exhibited good electron emission properties. The turn-on field was only 0.55V/μm, and emission current density as high as 11mA/cm2 was obtained under an applied field of 2.18V/μm for the first operation. After several cycling operations, the field emission tended to stable characteristics of current versus voltage. The stability evolvement and mechanism are investigated relating to microstructure of the sphere-like diamond microcrystalline-aggregates films.

scholarly journals The Field Emission Properties of Graphene Aggregates Films Deposited on Fe-Cr-Ni alloy Substrates

2010 ◽  
Vol 2010 ◽  
pp. 1-4 ◽  
Author(s):  
Zhanling Lu ◽  
Wanjie Wang ◽  
Xiaotian Ma ◽  
Ning Yao ◽  
Lan Zhang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Field Emission ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Raman Scattering Spectroscopy ◽  
Emission Properties ◽  
Plasma Chemical Vapor Deposition ◽  
Field Emission Properties ◽  
Ni Alloy

The graphene aggregates films were fabricated directly on Fe-Cr-Ni alloy substrates by microwave plasma chemical vapor deposition system (MPCVD). The source gas was a mixture of and with flow rates of 100 sccm and 12 sccm, respectively. The micro- and nanostructures of the samples were characterized by Raman scattering spectroscopy, field emission scanning electron microscopy (SEM), and transparent electron microscopy (TEM). The field emission properties of the films were measured using a diode structure in a vacuum chamber. The turn-on field was about 1.0 V/m. The current density of 2.1 mA/ at electric field of 2.4 V/m was obtained.

Sign in / Sign up

Export Citation Format

Share Document