Microstructural influence on piezoresponse and leakage current behavior of Na0.5Bi0.5TiO3 Thin Films

MRS Advances ◽  
2016 ◽  
Vol 1 (37) ◽  
pp. 2597-2602
Author(s):  
Kumaraswamy Miriyala ◽  
Ranjith Ramadurai
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Bismuth Titanate ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Lead Free ◽  
Domain Pattern ◽  
Partial Pressures ◽  
Spherical Grains ◽  
Current Behavior

AbstractSodium bismuth titanate (Na0.5Bi0.5TiO3: NBT) a lead free piezoelectric; exhibits promising features such that it could be an alternate to lead based piezoelectrics. In this work, we report the microstructural influence on piezoelectric and leakage current behavior of NBT thin films grown by pulsed laser ablation (PLD). Various microstructural features like coarse faceted grains and fine spherical grains was achieved by effective optimization of substrate temperature and oxygen partial pressures. The studies reveals that, leakage current of NBT thin films were dominated by interface limited modified Schottky emission type of conduction. The piezoelectric domain studies reveal that for NBT thin films with fine spherical grain the domain pattern was highly dominated by the morphology and in the case of coarse faceted grains the domains were relatively large and the domains were extending beyond the grain boundaries.

scholarly journals Orientation dependent ferroelectric properties in samarium doped bismuth titanate thin films grown by the pulsed-laser-ablation method

2006 ◽  
Vol 89 (3) ◽  
pp. 032901 ◽  
Author(s):  
Zhenxiang Cheng ◽  
Chinna Venkatasamy Kannan ◽  
Kiyoshi Ozawa ◽  
Hideo Kimura ◽  
Xiaolin Wang
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Laser Ablation Method

Leakage current behavior in pulsed laser deposited Ba(Zr0.05Ti0.95)O3 thin films

2007 ◽  
Vol 101 (3) ◽  
pp. 034106 ◽  
Author(s):  
Arnab Mukherjee ◽  
P. Victor ◽  
J. Parui ◽  
S. B. Krupanidhi
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Pulsed Laser ◽  
Current Behavior

Temperature dependent leakage current behavior of pulsed laser ablated SrBi2Ta2O9 thin films

2009 ◽  
Vol 105 (4) ◽  
pp. 044103 ◽  
Author(s):  
A. Roy ◽  
S. Maity ◽  
A. Dhar ◽  
D. Bhattacharya ◽  
S. K. Ray
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Pulsed Laser ◽  
Temperature Dependent ◽  
Current Behavior

Structural and Leakage Current Behavior of Bi4Ti3O12 Thin Films on La0–5Sr0–5jCoO3 Bottom Electrodes Grown by Pulsed Laser Deposition

1994 ◽  
Vol 361 ◽  
Author(s):  
William Jo ◽  
K.H. Kim ◽  
T.W. Noh ◽  
S.D. Kwon ◽  
B.D. Choe ◽  
...  
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Bottom Electrode ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Crystalline Orientation ◽  
X Ray ◽  
Current Behavior

ABSTRACTUsing La0.5Sro.5CoO3 bottom electrode layers, Bi4Ti3O12 thin films were grown on LaAlO3(001), Al2O3(0001), and Si(001) substrates. Crystalline orientation of the Bi4Ti3O12 thin films was examined by x-ray diffraction techniques. The cross-sectional microstructures of Bi4Ti3O12/La0.5Sr0.5CoO3 heterostructures are investigated. It is found that the crystalline orientation and the microstructure affect leakage current behavior of the Bi4Ti3O12 layers.

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

1991 ◽  
Vol 49 ◽  
pp. 1068-1069
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Ablation Process ◽  
Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

ZnS thin films grown on Si(100) by XeCl pulsed laser ablation

2001 ◽  
Vol 177 (1-2) ◽  
pp. 73-77 ◽  
Author(s):  
K.T Hillie ◽  
C Curren ◽  
H.C Swart
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation
Sign in / Sign up

Export Citation Format

Share Document