Temperature dependent leakage current behavior of pulsed laser ablated SrBi2Ta2O9 thin films

2009 ◽  
Vol 105 (4) ◽  
pp. 044103 ◽  
Author(s):  
A. Roy ◽  
S. Maity ◽  
A. Dhar ◽  
D. Bhattacharya ◽  
S. K. Ray
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Pulsed Laser ◽  
Temperature Dependent ◽  
Current Behavior

Leakage current behavior in pulsed laser deposited Ba(Zr0.05Ti0.95)O3 thin films

2007 ◽  
Vol 101 (3) ◽  
pp. 034106 ◽  
Author(s):  
Arnab Mukherjee ◽  
P. Victor ◽  
J. Parui ◽  
S. B. Krupanidhi
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Pulsed Laser ◽  
Current Behavior

Microstructural influence on piezoresponse and leakage current behavior of Na0.5Bi0.5TiO3 Thin Films

MRS Advances ◽  
2016 ◽  
Vol 1 (37) ◽  
pp. 2597-2602
Author(s):  
Kumaraswamy Miriyala ◽  
Ranjith Ramadurai
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Bismuth Titanate ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Lead Free ◽  
Domain Pattern ◽  
Partial Pressures ◽  
Spherical Grains ◽  
Current Behavior

AbstractSodium bismuth titanate (Na0.5Bi0.5TiO3: NBT) a lead free piezoelectric; exhibits promising features such that it could be an alternate to lead based piezoelectrics. In this work, we report the microstructural influence on piezoelectric and leakage current behavior of NBT thin films grown by pulsed laser ablation (PLD). Various microstructural features like coarse faceted grains and fine spherical grains was achieved by effective optimization of substrate temperature and oxygen partial pressures. The studies reveals that, leakage current of NBT thin films were dominated by interface limited modified Schottky emission type of conduction. The piezoelectric domain studies reveal that for NBT thin films with fine spherical grain the domain pattern was highly dominated by the morphology and in the case of coarse faceted grains the domains were relatively large and the domains were extending beyond the grain boundaries.

Structural and Leakage Current Behavior of Bi4Ti3O12 Thin Films on La0–5Sr0–5jCoO3 Bottom Electrodes Grown by Pulsed Laser Deposition

1994 ◽  
Vol 361 ◽  
Author(s):  
William Jo ◽  
K.H. Kim ◽  
T.W. Noh ◽  
S.D. Kwon ◽  
B.D. Choe ◽  
...  
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Bottom Electrode ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Crystalline Orientation ◽  
X Ray ◽  
Current Behavior

ABSTRACTUsing La0.5Sro.5CoO3 bottom electrode layers, Bi4Ti3O12 thin films were grown on LaAlO3(001), Al2O3(0001), and Si(001) substrates. Crystalline orientation of the Bi4Ti3O12 thin films was examined by x-ray diffraction techniques. The cross-sectional microstructures of Bi4Ti3O12/La0.5Sr0.5CoO3 heterostructures are investigated. It is found that the crystalline orientation and the microstructure affect leakage current behavior of the Bi4Ti3O12 layers.

scholarly journals Temperature dependent self-compensation in Al- and Ga-doped Mg0.05 Zn0.95O thin films grown by pulsed laser deposition

2016 ◽  
Vol 120 (20) ◽  
pp. 205703 ◽  
Author(s):  
Abdurashid Mavlonov ◽  
Steffen Richter ◽  
Holger von Wenckstern ◽  
Rüdiger Schmidt-Grund ◽  
Michael Lorenz ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Temperature Dependent

Impact of Sputter Deposition Parameters on the Leakage Current Behavior of Aluminum Nitride Thin Films

2012 ◽  
Vol 77 ◽  
pp. 29-34 ◽  
Author(s):  
Michael Schneider ◽  
Tobias Strunz ◽  
Achim Bittner ◽  
Ulrich Schmid
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Aluminum Nitride ◽  
Leakage Current ◽  
Microelectromechanical Systems ◽  
Constant Electric Field ◽  
Strong Negative Correlation ◽  
Axis Orientation ◽  
Sputter Deposited ◽  
Current Behavior

In microelectromechanical systems, piezoelectric aluminum nitride (AlN) thin films are commonly used as functional material for sensing and actuating purposes. This is due to excellent dielectric properties as well as a high chemical and thermal stability of AlN. In this work, we investigate the leakage current behavior (i.e. IV characteristic and charging behavior) of AlN thin films sputter deposited at varying plasma powers (300 W – 800 W) and deposition pressures (4 µbar – 8 µbar) up to an electric field of 0.5 MV/cm. First results show a Poole-Frenkel behavior for all samples with an increase in leakage current by orders of magnitude as the degree of c-axis orientation decreases. In addition, the discharging curves (i.e. meaning the current discharge after an applied constant electric field) agree well with the empirical Curie - von Schweidler Law (I(t) = I0 + I1t-n) and an increase of the parameter I1 with temperature is observed. I1 shows qualitatively the same behavior as the overall stored charge. Furthermore, the results show a strong negative correlation between the parameters n and the time constant τ1/2 (i.e. defined as the time after which half the stored charge has decayed), proofing that n is a good indicator for the decay time of the stored charge.

Leakage current behavior of SrBi2Ta2O9 ferroelectric thin films on different bottom electrodes

2002 ◽  
Vol 92 (10) ◽  
pp. 6160-6164 ◽  
Author(s):  
Rasmi R. Das ◽  
P. Bhattacharya ◽  
Ram S. Katiyar ◽  
A. S. Bhalla
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Ferroelectric Thin Films ◽  
Current Behavior
Sign in / Sign up

Export Citation Format

Share Document