scholarly journals Orientation dependent ferroelectric properties in samarium doped bismuth titanate thin films grown by the pulsed-laser-ablation method

2006 ◽  
Vol 89 (3) ◽  
pp. 032901 ◽  
Author(s):  
Zhenxiang Cheng ◽  
Chinna Venkatasamy Kannan ◽  
Kiyoshi Ozawa ◽  
Hideo Kimura ◽  
Xiaolin Wang
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Laser Ablation Method

Fabrication of La2-x Ce x CuO4 Thin Films using Pulsed Laser Ablation Method

2000 ◽  
pp. 912-914 ◽  
Author(s):  
Yasuhiro Matsuo ◽  
Kiyosi Betsuyaku ◽  
Hirosi Katayama-Yoshida ◽  
Tomoji Kawai
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Laser Ablation Method

Pulsed laser ablation synthesis and ferroelectric properties of SrBi2Ta2O9 thin films

1998 ◽  
Vol 20 (1-4) ◽  
pp. 79-86 ◽  
Author(s):  
Pingxiong Yang ◽  
Lirong Zheng ◽  
Chenglu Lin ◽  
Wenbiao Wu ◽  
Masanori Okuyama
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation

Pulsed laser-ablation deposition of thin films of molybdenum silicide and its properties as a conducting barrier for ferroelectric random-access memory technology

1999 ◽  
Vol 14 (3) ◽  
pp. 940-947 ◽  
Author(s):  
Sucharita Madhukar ◽  
S. Aggarwal ◽  
A. M. Dhote ◽  
R. Ramesh ◽  
S. B. Samavedam ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Properties ◽  
Random Access ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Lead Zirconate ◽  
Capacitive Coupling ◽  
Molybdenum Silicide

We report on the feasibility of using molybdenum silicide as a conducting barrier for integration of ferroelectric lead zirconate titanate capacitors on Si. Thin films of MoSi2 were deposited by pulsed laser-ablation deposition (PLD). The silicide films showed a structural transition from amorphous to orthorhombic to tetragonal phase as the temperature of deposition was changed from room temperature to 900 °C. The four-probe resistivity and surface roughness of the films decreased with an increase in the deposition temperature and crystallinity of the phase. Ferroelectric (La, Sr)CoO3/Pb(Nb, Zr, Ti)O3/(La, Sr)CoO3 capacitors were grown on Si/poly Si/MoSi2, and Si/poly Si/MoSi2/Pt structures. Transmission electron microscopy (TEM) studies of the MoSi2/LSCO and MoSi2/Pt/LSCO heterostructures indicated the formation of a thin layer of SiO2. In the case of Pt/MoSi2, Pt reacts with the silicide and forms PtSi, consuming the entire platinum layer and, thus, makes it unsuitable as a composite barrier. Electrical testing of the LSCO/PNZT/LSCO capacitors through capacitive coupling showed desirable ferroelectric properties on these substrates.

Investigation of the Characteristics of Ferroelectric Thin Films Deposited by Pulsed Laser Ablation

1994 ◽  
Vol 361 ◽  
Author(s):  
S. Sengupta ◽  
D.P. Vijay ◽  
S.B. Desu
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Secondary Phase ◽  
Ferroelectric Thin Films ◽  
Laser Ablation Method ◽  
Target Composition ◽  
Lower Oxygen

ABSTRACTFerroelectric thin films of barium strontium titanate (BSTO) have been deposited on bare and metallized substrates by pulsed laser ablation method under different oxygen ambients (150 mT and 50 mT). Under an oxygen pressure of 150 mT, the film composition was similar to that of its ablation target composition, viz. Ba0.4TiO3. However, when the films were deposited under the lower oxygen pressure, x-ray diffraction studies showed the presence of a secondary phase. The electrical characteristics of the films were measured to examine the effect of the stoichiometry on the dielectric constant and tunability. The results of this study will be presented.

Evaluation of Planar-Type Thin Film ZnO Varistors Fabricated Using Pulsed Laser Ablation

2006 ◽  
Vol 320 ◽  
pp. 109-112
Author(s):  
Sayuki Sawa ◽  
Shinzo Yoshikado
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Alumina Substrate ◽  
Laser Ablation Method ◽  
Zno Varistors ◽  
532 Nm ◽  
Deposited Films

Planar-type thin film Bi-Mn-Co-doped ZnO varistors were fabricated on a silica glass substrate or a sintered alumina substrate using a visible light (532 nm) pulsed laser ablation method. The deposited thin films were annealed at 800°C or 900°C in air. For the thin films deposited on alumina substrates and then annealed, the contents of Bi and Mn decreased compared with those of the as-deposited films. Voltage-current (V-I) characteristics of the thin-film varistor fabricated on the alumina substrates and annealed showed nonlinearity. The nonlinearity index α was approximately 10 for the thin film deposited on the alumina substrate and annealed at 800°C in air using a target of ZnO doped with 2.5 mol% Bi2O3, 0.5 mol% MnO2 and 0.2 mol% Co3O4. Moreover, the current density of 20 A/cm3 was relatively high for safety use.

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