scholarly journals Influence of Atomic Disorder on the Auger Recombination Rate in p-InGaN Alloys

2020 ◽  
Vol 65 (2) ◽  
pp. 157
Author(s):  
A. V. Zinovchuk ◽  
E. A. Sevost’yanov
Keyword(s):  
Recombination Rate ◽  
Auger Recombination ◽  
Wide Band ◽  
Stoichiometric Ratio ◽  
Interband Transitions ◽  
Recombination Rates ◽  
Wide Band Gap ◽  
Atomic Disorder ◽  
Auger Recombination Rate ◽  
Ingan Alloys

The influence of the atomic disorder on the Auger recombination rate in p-InGaN alloys has been studied. The disorder was simulated using a 4 × 4 × 4 supercell in which In and Ga atoms taken in a required stoichiometric ratio were randomly distributed over the supercell sites. A comparison between the Auger recombination rates calculated in the framework of the supercell and virtual-crystal approximations showed that a large number of allowed interband transitions induced by the atomic disorder strongly increases the Auger recombination rate in wide-band-gap p-InGaN alloys.

Auger recombination in silicon nanocrystals embedded in SiO2 wide band-gap lattice

2008 ◽  
Vol 205 (11) ◽  
pp. 2630-2634 ◽  
Author(s):  
M. Mahdouani ◽  
R. Bourguiga ◽  
S. Jaziri ◽  
S. Gardelis ◽  
A. G. Nassiopoulou
Keyword(s):  
Band Gap ◽  
Silicon Nanocrystals ◽  
Auger Recombination ◽  
Wide Band ◽  
Wide Band Gap

scholarly journals Nonmonotonic Dependence of Auger Recombination Rate on Shell Thickness for CdSe/CdS Core/Shell Nanoplatelets

Nano Letters ◽  
2017 ◽  
Vol 17 (11) ◽  
pp. 6900-6906 ◽  
Author(s):  
Matthew Pelton ◽  
Jordan J. Andrews ◽  
Igor Fedin ◽  
Dmitri V. Talapin ◽  
Haixu Leng ◽  
...  
Keyword(s):  
Recombination Rate ◽  
Shell Thickness ◽  
Auger Recombination ◽  
Core Shell ◽  
Nonmonotonic Dependence ◽  
Auger Recombination Rate

Radiative Recombination Rates in GaN, InN, AlN and their Solid Solutions

1996 ◽  
Vol 423 ◽  
Author(s):  
A. V. Dmitriev ◽  
A. L. Oruzheinikov
Keyword(s):  
Solid Solutions ◽  
Radiative Recombination ◽  
Energy Gap ◽  
Wide Band ◽  
Linear Interpolation ◽  
Recombination Rates ◽  
Wide Band Gap ◽  
Wide Range ◽  
Conductivity Band ◽  
First Time

AbstractThe radiative recombination rates have been calculated for the first time in the wide band gap wurtzite semiconductors GaN, InN and AIN and their solid solutions GaxAl1−xN and InxAl1−xN on the base of existing data on the energy band structure and optical absorption in these materials. We calculated the interband matrix elements for the direct optical transitions between the conductivity band and the valence one using the experimental photon energy dependence of the absorption coefficient near the band edge. In our calculations we assumed that the material parameters of the solid solutions (the interband matrix element, carrier effective masses and so on) could be obtained by a linear interpolation between their values in the alloy components. The temperature dependence of the energy gap was taken in the form proposed by Varshni. The calculations of the radiative recombination rates were performed in the wide range of temperature and alloy compositions.

Novel N-Black In2O3-x/InVO4 heterojunction for efficient photocatalytic fixation: Synergistic effect of exposed (321) facet and oxygen vacancy

2021 ◽  
Author(s):  
Jin Ye ◽  
Jiating Xu ◽  
Chunsheng Li ◽  
Di Tian ◽  
Xiaohan Zhao ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Synergistic Effect ◽  
Band Gap ◽  
Recombination Rate ◽  
Wide Band ◽  
Great Promise ◽  
Wide Band Gap ◽  
High Recombination Rate ◽  
Energy Shortage

Utilizing semiconductors to catalyze N2 into NH3 has brought great promise in alleviating the issue of energy shortage. However, the wide band gap and high recombination rate of photogenerated (e-/h+)...

Sign in / Sign up

Export Citation Format

Share Document