Novel N-Black In2O3-x/InVO4 heterojunction for efficient photocatalytic fixation: Synergistic effect of exposed (321) facet and oxygen vacancy

2021 ◽  
Author(s):  
Jin Ye ◽  
Jiating Xu ◽  
Chunsheng Li ◽  
Di Tian ◽  
Xiaohan Zhao ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Synergistic Effect ◽  
Band Gap ◽  
Recombination Rate ◽  
Wide Band ◽  
Great Promise ◽  
Wide Band Gap ◽  
High Recombination Rate ◽  
Energy Shortage

Utilizing semiconductors to catalyze N2 into NH3 has brought great promise in alleviating the issue of energy shortage. However, the wide band gap and high recombination rate of photogenerated (e-/h+)...

Wide Band Gap Quantum Dots Sensitized α-Fe2O3 Thin Film for Solar Generation of Hydrogen

2015 ◽  
Vol 1738 ◽  
Author(s):  
Ashi Ikram ◽  
Sonal Sahai ◽  
Snigdha Rai ◽  
Sahab Dass ◽  
Rohit Shrivastav ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Band Gap ◽  
Recombination Rate ◽  
Wide Band ◽  
Photocurrent Density ◽  
Flat Band ◽  
Present System ◽  
Wide Band Gap ◽  
Carrier Recombination ◽  
Zno Qds

ABSTRACTPresent study investigates the system of small and large band gap materials for their use in Photoelectrochemical splitting of water. Electrodeposited Zr doped hematite (α-Fe2O3) films were subjected to ZnO quantum dots sensitization for 24, 48, and 72 hours which later on characterized for optical, structural, morphological and photoelectrochemical properties. These sensitized films, when used as photoelectrode in PEC cell, showed a significant increase in the photocurrent density as compared to unsensitized films. This may be attributed to reduction in carrier recombination rate along with photocatalytic effect of ZnO. The enhanced photo response has also been supported by increased negative value of flat band potential from -0.29V/SCE for unsensitized film to -0.8V/SCE for ZnO QDs sensitized hematite film, as examined by Mott-Schottky curve. In the present system, small band gap hematite has been chosen as a main solar energy absorber, while wide band gap ZnO QDs decorated over it, as an efficient electron transport across the interface by reducing charge carrier recombination rate.

TEM and cathodoluminescence of precipitates in II-VI semiconductors

1988 ◽  
Vol 46 ◽  
pp. 488-489
Author(s):  
Joanna L. Batstone
Keyword(s):  
Crystal Growth ◽  
Band Gap ◽  
Local Strain ◽  
Wide Band ◽  
Optoelectronic Device ◽  
Wide Band Gap ◽  
Bulk Crystal Growth ◽  
Transmission Electron ◽  
Device Applications ◽  
Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

Wide Band-Gap Kesterite Thin Films for Photovoltaic Applications

2018 ◽  
Author(s):  
Raquel Caballero ◽  
Leonor de la Cueva ◽  
Andrea Ruiz-Perona ◽  
Yudenia Sánchez ◽  
Markus Neuschitzer ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Photovoltaic Applications

Preparation and Characterization of Polyvinylidene Fluoride/ZrO2-TiO2 Optical Film with Wide Band Gap and High Refractive Index

2013 ◽  
Vol 28 (6) ◽  
pp. 671-676 ◽  
Author(s):  
Yu-Qing ZHANG ◽  
Li-Li ZHAO ◽  
Shi-Long XU ◽  
Chao ZHANG ◽  
Xiao-Ying CHEN ◽  
...  
Keyword(s):  
Refractive Index ◽  
Band Gap ◽  
Polyvinylidene Fluoride ◽  
Wide Band ◽  
High Refractive Index ◽  
Wide Band Gap ◽  
Optical Film
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