Auger recombination in silicon nanocrystals embedded in SiO2 wide band-gap lattice

2008 ◽  
Vol 205 (11) ◽  
pp. 2630-2634 ◽  
Author(s):  
M. Mahdouani ◽  
R. Bourguiga ◽  
S. Jaziri ◽  
S. Gardelis ◽  
A. G. Nassiopoulou
Keyword(s):  
Band Gap ◽  
Silicon Nanocrystals ◽  
Auger Recombination ◽  
Wide Band ◽  
Wide Band Gap

Silicon nanocrystals embedded in silicon carbide as a wide-band gap photovoltaic material

2016 ◽  
Vol 144 ◽  
pp. 551-558 ◽  
Author(s):  
J. López-Vidrier ◽  
P. Löper ◽  
M. Schnabel ◽  
S. Hernández ◽  
M. Canino ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Band Gap ◽  
Silicon Nanocrystals ◽  
Wide Band ◽  
Wide Band Gap ◽  
Photovoltaic Material

TEM and cathodoluminescence of precipitates in II-VI semiconductors

1988 ◽  
Vol 46 ◽  
pp. 488-489
Author(s):  
Joanna L. Batstone
Keyword(s):  
Crystal Growth ◽  
Band Gap ◽  
Local Strain ◽  
Wide Band ◽  
Optoelectronic Device ◽  
Wide Band Gap ◽  
Bulk Crystal Growth ◽  
Transmission Electron ◽  
Device Applications ◽  
Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

Wide Band-Gap Kesterite Thin Films for Photovoltaic Applications

2018 ◽  
Author(s):  
Raquel Caballero ◽  
Leonor de la Cueva ◽  
Andrea Ruiz-Perona ◽  
Yudenia Sánchez ◽  
Markus Neuschitzer ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Photovoltaic Applications

Preparation and Characterization of Polyvinylidene Fluoride/ZrO2-TiO2 Optical Film with Wide Band Gap and High Refractive Index

2013 ◽  
Vol 28 (6) ◽  
pp. 671-676 ◽  
Author(s):  
Yu-Qing ZHANG ◽  
Li-Li ZHAO ◽  
Shi-Long XU ◽  
Chao ZHANG ◽  
Xiao-Ying CHEN ◽  
...  
Keyword(s):  
Refractive Index ◽  
Band Gap ◽  
Polyvinylidene Fluoride ◽  
Wide Band ◽  
High Refractive Index ◽  
Wide Band Gap ◽  
Optical Film

scholarly journals Routes to develop a [S]/([S]+[Se]) gradient in wide band-gap Cu2ZnGe(S,Se)4 thin-film solar cells

2021 ◽  
Vol 868 ◽  
pp. 159253
Author(s):  
Andrea Ruiz-Perona ◽  
Galina Gurieva ◽  
Michael Sun ◽  
Tim Kodalle ◽  
Yudania Sánchez ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Band Gap ◽  
Wide Band ◽  
Thin Film Solar Cells ◽  
Wide Band Gap
Sign in / Sign up

Export Citation Format

Share Document