scholarly journals Peculiarities and asymmetry of polarization reversal in Pt/PZT-film/Pt:Ti/SiO2/Si-substrate structures in pyroelectric response investigations

2004 ◽  
Vol 7 (3) ◽  
pp. 263-271 ◽  
Author(s):  
S.L. Bravina ◽  
Keyword(s):  
Polarization Reversal ◽  
Si Substrate ◽  
Pzt Film ◽  
Pyroelectric Response

scholarly journals Asymmetry of Polarization Reversal and Current-Voltage Characteristics of Pt/PZT-Film/Pt:Ti/SiO2/Si-Substrate Structures

2011 ◽  
Vol 2011 ◽  
pp. 1-5
Author(s):  
S. L. Bravina ◽  
N. V. Morozovsky ◽  
J. Costecalde ◽  
C. Soyer ◽  
D. Remiens ◽  
...  
Keyword(s):  
Piezoresponse Force Microscopy ◽  
Local Deformation ◽  
Dynamic Mode ◽  
Polarization Reversal ◽  
Si Substrate ◽  
Charge Voltage ◽  
Force Microscopy ◽  
Pzt Film ◽  
Current Voltage ◽  
Bipolar Charge

The characterization of the asymmetries of bipolar charge-voltage and current-voltage loops of polarization reversal and unipolar current-voltage curves for Pt/PZT-film/Pt:Ti/SiO2/Si-substrate systems was performed in the dynamic mode. The asymmetry of local deformation-voltage loops was observed by piezoresponse force microscopy. The comparison of the dependences of introduced asymmetry factors for the bipolar charge-voltage and current-voltage loops and unipolar current-voltage curves on drive voltage indicates the interconnection of ferroelectric and electrical space charge transfer asymmetries.

PZT Film and Si Substrate Two-Layer System Patterning Morphology by Femtosecond Pulsed Laser

2007 ◽  
Author(s):  
Shizhou Xiao ◽  
Rui Guo ◽  
Guanghua Cheng ◽  
Yalei Wu ◽  
Wenhao Huang ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Laser Energy ◽  
Threshold Model ◽  
Pulsed Laser ◽  
Direct Writing ◽  
Si Substrate ◽  
Layer System ◽  
Substrate Heating ◽  
Pzt Film ◽  
Femtosecond Pulsed Laser

In this paper, a novel PZT film patterning method by femtosecond laser is proposed. The method is different from traditional dry-etching and wet-etching technology. Femtosecond laser microfabrication technology has several advantages such as high resolution, no mask direct-writing and seldom-heating, etc. A two-layer (PZT thin film and substrate) heating and ablating threshold model is built and the relationship of PZT/Si two-layer system micro ablation morphology depending on laser pulse energy is constructed. From the model and experiment data, we obtain the suitable energy region to pattern PZT film freely without damage Si substrate. A 3μm resolution of PZT pattern is achieved in our experiment. In order to verify the fabrication available of this technology, several micro functional devices are successfully patterned by optimized femtosecond pulsed laser energy and their function are detected. The results prove that the PZT patterning quality is good.

Examination of Operation of PZT-Film–Si-Substrate Structures as Pyroactive Memory Elements

2007 ◽  
Vol 353 (1) ◽  
pp. 193-201 ◽  
Author(s):  
S. L. Bravina ◽  
N. V. Morozovsky ◽  
D. Remiens ◽  
C. Soyer
Keyword(s):  
Si Substrate ◽  
Pzt Film

Heteroepitaxial Growth of Ir/ZrN Layered Electrode on (100)Si Substrate for Ferroelectric Capacitor

1999 ◽  
Vol 596 ◽  
Author(s):  
Sadayoshi Horii ◽  
Seiji Yokoyama ◽  
Susumu Horita
Keyword(s):  
Coercive Field ◽  
Pulse Train ◽  
Remanent Polarization ◽  
Bipolar Pulse ◽  
Heteroepitaxial Growth ◽  
Si Substrate ◽  
Ferroelectric Capacitor ◽  
Substrate Structure ◽  
Pzt Film ◽  
Polarization Electric Field

AbstractAn Ir film was grown heteroepitaxially on the epitaxial (100)ZrN film deposited on the (100)Si substrate by sputtering. Further, we obtained a heteroepitaxial (001)PZT film on the epitaxial (100)Ir/(100)ZrN/(100)Si substrate structure by reactive sputtering. The crystallographic relationship was cube-on-cube. The polarization-electric field hysteresis loop of the 300-nm-thick epitaxial PZT film with a top electrode of IrO2 showed a saturated square shape at an ac amplitude of 5V, and the remanent polarization, 2Pr, and coercive field, 2Ec, were 60 μC/cm 2 and 80 kV/cm, respectively. The Pr was not reduced up to 5×1010 switching cycles with a ±10 V bipolar pulse train. The leakage current of the PZT film at +5 V and –5 V was about 8.0× 10−8 and 2.5 ×10−7 A/cm2, respectively.

Influence of Pre-Oxidation of an Ir Film on Chemical Composition and Crystal Property of a PZT Film Deposited on the Ir Film by Sputtering

2004 ◽  
Vol 811 ◽  
Author(s):  
Susumu Horita ◽  
Makoto Shoga
Keyword(s):  
Chemical Composition ◽  
Bottom Electrode ◽  
Rf Sputtering ◽  
Si Substrate ◽  
Film Composition ◽  
Crystal Property ◽  
Composition Ratio ◽  
Target Composition ◽  
Pzt Film ◽  
Xrd Patterns

ABSTRACTWe investigated the influence of pre-oxidation of an Ir film as a bottom electrode on the chemical composition and crystal property of the PZT film deposited on it by RF sputtering, changing the sputtering target composition ratio Zr/Ti to be 20/80, 52/48 or 80/20. The Ir film deposited on a thermally oxidized Si substrate was pre-oxidized at 600°C for 20 min in the O2 gas of 10 Pa. The XRD patterns showed a strong PbO(101) peak from the PZT film on the oxidized Ir film for Zr/Ti = 52/48, but no PbO peak from the film on a no oxidized Ir film. The RBS measurement showed that the film composition ratio of Pb/(Zr+Ti) on the pre-oxidized Ir film was much larger than that on the no oxidized Ir film. For Zr/Ti=20/80, the same tendency was observed. However, for Zr/Ti=80/20, the chemical composition of the PZT film on the pre-oxidized Ir film was almost equal to that without oxidation.

Pyroelectric Effects on 1T-1C Fram and 1Tr Fram

1998 ◽  
Vol 541 ◽  
Author(s):  
In Kyeong Yoo ◽  
I.S. Chung ◽  
C.J. Kim ◽  
J.K. Lee ◽  
B.K. Jeon ◽  
...  
Keyword(s):  
Thermal Shock ◽  
Heating Rate ◽  
Test Method ◽  
Thermal Shock Test ◽  
Polarization Reversal ◽  
Shock Test ◽  
Pyroelectric Effect ◽  
Pzt Film ◽  
In Series ◽  
Flow Through

AbstractPyroelectric effect on ferroelectricity was examined for PZT capacitors with diodes in series. It was observed that the magnitude of the polarization reversal increases as heating rate increases. The polarization reversal begins to decrease as heating rate becomes very high, which may stem from the fact that pyroelectric charges flow through the PZT film at high temperature as the film loses its resistance at the elevated temperature. A pure remanent polarization reversal model is suggested for the polarization reversal caused by pyroelectric charges. Based on the above results, a thermal shock test method is proposed for quality control of FRAM products. The thermal shock test reveals that pyroelectric effect can be minimized by controlling process for 1T-1C FRAM. It was also observed, by the thermal shock test, that imprint dominates pyroelectric effect in 1Tr cell with MFIS structure.

Transfer Technology of Ferroelectric Films onto the Polymer Substrate for the Application of High Density Capacitor

2009 ◽  
Vol 74 ◽  
pp. 311-314
Author(s):  
Masaaki Ichiki ◽  
Ryutaro Maeda ◽  
Tadatomo Suga
Keyword(s):  
Dielectric Constant ◽  
Perovskite Structure ◽  
High Density ◽  
Polymer Substrate ◽  
Si Substrate ◽  
Ferroelectric Films ◽  
Pzt Film ◽  
High Dielectric

High dielectric capacitors , that has around 1000 in dielectric constant, can be successfully formed by nanotransfer on non-heat-resisting substrates. PZT film could be released from the Si substrate and bonded onto the polymer one. The releasing characteristics have the relationships with the thickness of Pt layer. The formed PZT has perovskite structure and clear columnar texture.

Thick Pb(Zr,Ti)O3 films fabricated by inducing residual compressive stress during the annealing process

2005 ◽  
Vol 20 (11) ◽  
pp. 2898-2901 ◽  
Author(s):  
Jae-Wung Lee ◽  
Jong-Jin Choi ◽  
Gun-Tae Park ◽  
Chee-Sung Park ◽  
Hyoun-Ee Kim
Keyword(s):  
Residual Stress ◽  
Electrical Properties ◽  
Compressive Stress ◽  
Crack Formation ◽  
Annealing Process ◽  
Residual Compressive Stress ◽  
Silicon Substrates ◽  
Si Substrate ◽  
Pzt Film ◽  
Pzt Films

The effects of residual stress induced during the annealing process on the microstructural evolution and electrical properties of Pb(Zr,Ti)O3 (PZT) films were investigated. PZT films were deposited on platinized silicon substrates by the radio frequency magnetron sputtering method using a single oxide target. Compressive stress was induced in the film by bending the silicon substrate during sputtering using a specially designed substrate holder and subsequently annealing the film without the holder. Without the residual stress, the PZT film was severely cracked when it was thicker than 2 μm due to the thermal expansion mismatch between the PZT and the Si substrate. On the other hand, when the residual stress was applied, no cracks were detected in the film for thicknesses of up to 4 μm. The suppression of crack formation was attributed to the residual compressive stress that compensated for the tensile stress generated during and/or after the annealing process. The electrical properties of the PZT film with the residual stress were improved compared to those of the PZT film without the residual stress.

Fabrication of Piezoelectric Cantilever Beam Based on Nanostructured PZT Film

2008 ◽  
Vol 368-372 ◽  
pp. 223-225 ◽  
Author(s):  
Hong Mei Liu ◽  
Quan Liang Zhao ◽  
Cheng Jun Qiu ◽  
Mao Sheng Cao
Keyword(s):  
Thick Film ◽  
Cantilever Beam ◽  
Spin Coating ◽  
Sol Gel ◽  
Si Substrate ◽  
Nano Powder ◽  
Pzt Film ◽  
Saturation Polarization ◽  
Piezoelectric Cantilever ◽  
Pzt Thick Film

A sol-gel technology to fabricate PZT thick film for cantilever beam was investigated. In this process, PZT nano-powder is dispersed into a PZT sol solution, which is identical with the powder in composition, and then the PZT suspension and clean PZT sol solution were deposited alternately on an Au/Cr/SiO2/Si substrate using spin-coating route. Above process was repeated in order to deposit the desired thickness. The results showed that the perovskite PZT thick film with thickness of about 4 μm was obtained after annealing at 650 °C for 2 h and it has the saturation polarization of 54 μC/cm2, the remnant polarization of 30 μC/cm2 and the coercive field of 50 kV/cm.

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