Effect of Pre- and Post-Epitaxial Annealing on Oxygen Precipitation and Internal Gettering in N/N

2008 ◽  
pp. 371-371-16
Author(s):  
W Wijaranakula ◽  
S Shimada ◽  
H Mollenkopf ◽  
JH Matlock ◽  
M Stuber
Keyword(s):  
Oxygen Precipitation

Oxygen precipitation in silicon: Experimental studies and theoretical investigations within the classical theory of nucleation

1999 ◽  
Vol 85 (12) ◽  
pp. 8097-8111 ◽  
Author(s):  
K. F. Kelton ◽  
R. Falster ◽  
D. Gambaro ◽  
M. Olmo ◽  
M. Cornara ◽  
...  
Keyword(s):  
Classical Theory ◽  
Experimental Studies ◽  
Oxygen Precipitation ◽  
Theoretical Investigations

Early stages of oxygen precipitation in silicon: The effect of hydrogen

2000 ◽  
Vol 34 (9) ◽  
pp. 998-1003 ◽  
Author(s):  
V. P. Markevich ◽  
L. I. Murin ◽  
J. L. Lindström ◽  
M. Suezawa
Keyword(s):  
Early Stages ◽  
Oxygen Precipitation

Oxygen Precipitation in Conventional and Nitrogen Co-Doped Heavily Arsenic-Doped Czochralski Silicon Crystals: Oswald Ripening

2009 ◽  
Vol 156-158 ◽  
pp. 275-278
Author(s):  
Xiang Yang Ma ◽  
Yan Feng ◽  
Yu Heng Zeng ◽  
De Ren Yang
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Oxygen Precipitation ◽  
High Temperature Anneal ◽  
Oxygen Precipitates ◽  
Co Doped ◽  
Oswald Ripening

Oxygen precipitation (OP) behaviors in conventional and nitrogen co-doped heavily arsenic-doped Czocharalski silicon crystals subjected to low-high two-step anneals of 650 oC/8 h + 1000 oC/4-256 h have been comparatively investigated. Due to the nitrogen enhanced nucleation of OP during the low temperature anneal, much higher density of oxygen precipitates generated in the nitrogen co-doped specimens. With the extension of high temperature anneal, Oswald ripening of OP in the nitrogen co-doped specimens preceded that in the conventional ones. Moreover, due to the Oswald ripening effect, the oxygen precipitates in the conventional specimens became larger with a wider range of sizes. While, the sizes of oxygen precipitates in the nitrogen co-doped specimens distributed in a much narrower range with respect to the conventional ones.

Oxygen Precipitation Along Individual Ion Tracks During High Dose O+ Implantation into Silicon

1987 ◽  
Vol 93 ◽  
Author(s):  
Witold P. Maszara
Keyword(s):  
Silicon Layer ◽  
High Dose ◽  
Regular Array ◽  
Ion Tracks ◽  
Oxygen Precipitation ◽  
Transmission Electron ◽  
Oxygen Gas ◽  
Kinetics Of ◽  
Secondary Ion ◽  
Lattice Matched

ABSTRACTSilicon wafers with and without protective1Ahermil oxide were implanted with oxygen at 150keV with doses 1.6 – 2.0×1018 cm−2. Transmission electron microscopy (TEM) and secondary ion mass spectroscopy (SIMS) were used to study the top silicon layer remaining above the implanted buried oxide. regular array of spheroidal voids filled with oxygen gas was observed only in the samples that were not protected by the oxide. The voids were aligned into individual columns whose crystallographic orientation with respect to the host silicon lattice matched the direction of the implantation. The origin and the kinetics of their formation are discussed.

Oxygen Precipitation in Heavily Phosphorus-doped Czochralski Silicon

2019 ◽  
Vol 18 (1) ◽  
pp. 1001-1011 ◽  
Author(s):  
Yuheng Zeng ◽  
Deren Yang ◽  
Xiangyang Ma ◽  
Xinpeng Zhang ◽  
Lixia Lin ◽  
...  
Keyword(s):  
Czochralski Silicon ◽  
Oxygen Precipitation ◽  
Phosphorus Doped

Oxygen precipitation behavior in heavily arsenic doped silicon crystals

2017 ◽  
Vol 457 ◽  
pp. 325-330 ◽  
Author(s):  
Stephan Haringer ◽  
Daniela Gambaro ◽  
Maria Porrini
Keyword(s):  
Precipitation Behavior ◽  
Silicon Crystals ◽  
Oxygen Precipitation ◽  
Doped Silicon

Prediction of Spatial Patterns of Oxygen Precipitation in Silicon

1984 ◽  
Vol 131 (12) ◽  
pp. 2918-2923 ◽  
Author(s):  
G. Markovits ◽  
E. E. Hearn ◽  
M. V. Kulkarni ◽  
B. J. Elliott
Keyword(s):  
Spatial Patterns ◽  
Oxygen Precipitation

Effects of Carbon Concentration Upon Oxygen Precipitation in Cz Si

1987 ◽  
Vol 104 ◽  
Author(s):  
S. Hahn ◽  
M. Arst ◽  
K. N. Ritz ◽  
S. Shatas ◽  
H. J. Stein ◽  
...  
Keyword(s):  
Carbon Content ◽  
Carbon Concentration ◽  
High Carbon ◽  
High Carbon Content ◽  
Oxygen Precipitation ◽  
Oxygen Precipitate ◽  
High Carbon Concentration ◽  
Precipitation Characteristics ◽  
C Complex ◽  
Oxide Precipitate

ABSTRACTEffects of high carbon concentration upon oxygen precipitate formation in Cz silicon have been investigated by combining various furnace and rapid thermal annneals. Even though oxide precipitate density increases with increasing carbon levels, Cs, synchrotron radiation section topographs of processed high carbon content wafers (Cs ∼ 4ppma) exhibit Pendellosung fringes, indicating a strain free bulk state. Our optical microscopic data have also shown very few defect etch features inside the bulk. A model based upon a direct coupling of both SiO2 and Si-C complex formation reactions is used to explain rather unique oxygen precipitation characteristics in the high carbon content Cz Si materials.

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