Applications of x-ray Fluorescence Analysis to the Thin Layer on Silicon Wafers

2008 ◽  
pp. 615-615-13
Author(s):  
T Shiraiwa ◽  
T Ochiai ◽  
M Sano ◽  
Y Tada ◽  
T Arai
Keyword(s):  
Thin Layer ◽  
Fluorescence Analysis ◽  
Silicon Wafers ◽  
X Ray

Impurities in multicrystalline silicon wafers for solar cells detected by synchrotron micro-beam X-ray fluorescence analysis

2012 ◽  
Vol 27 (11) ◽  
pp. 1875 ◽  
Author(s):  
Günter Buzanich ◽  
Martin Radtke ◽  
Uwe Reinholz ◽  
Heinrich Riesemeier ◽  
Andreas F. Thünemann ◽  
...  
Keyword(s):  
Solar Cells ◽  
Fluorescence Analysis ◽  
Silicon Wafers ◽  
Multicrystalline Silicon ◽  
X Ray

X-Ray Fluorescence Analysis of Oxide Magnetic Tape Using Thin Layer Fundamental Parameter Analysis

1991 ◽  
Vol 35 (B) ◽  
pp. 1133-1138
Author(s):  
Ko Kimura ◽  
Hideaki Wakamatsu ◽  
Takeshi Kitamura ◽  
Ryozo Maeda ◽  
Kunthiro Fujiwara
Keyword(s):  
Thin Layer ◽  
Magnetic Tape ◽  
Inductively Coupled Plasma ◽  
Rapid Determination ◽  
Fluorescence Analysis ◽  
Parameter Analysis ◽  
Elemental Content ◽  
Fundamental Parameter ◽  
Standard Samples ◽  
X Ray

In recent years, for the development of magnetic tape, it has become increasingly important that the elemental content be determined accurately and rapidly. In the past, the elemental content of magnetic tape was determined by calibration analysis using a wavelength dispersive X-ray fluorescence spectrometer(WDXRF). For calibration analysis many standard samples and large amount of sample were needed. Preparation of sample for calibration analysis, as well as for inductively coupled plasma emission spectral analysis(ICP) was difficult. On the other hand, for thin layer fundamental parameter analysis(we call TLFP) using a WDXRF, a few standard samples and l.pss sample are needed and preparation of the sample is easy. The superiority of TLFP analysis can be seen In comparison with calibration analysis and IOP analysis in Table 1. For this reason, this study has established a method for accurate and rapid determination of the elemental composition of oxide magnetic tape by TLFP analysis using a WDXRF.

X-Ray Fluorescence Analysis of Oxide Magnetic Tape Using Thin Layer Fundamental Parameter Analysis

1992 ◽  
pp. 1133-1138
Author(s):  
Ko Kimura ◽  
Hideaki Wakamatsu ◽  
Takeshi Kitamura ◽  
Ryozo Maeda ◽  
Kunihiro Fujiwara
Keyword(s):  
Thin Layer ◽  
Magnetic Tape ◽  
Fluorescence Analysis ◽  
Parameter Analysis ◽  
Fundamental Parameter ◽  
X Ray

Impurity Analysis of Silicon Wafers by Total Reflection X-ray Fluorescence Analysis

1988 ◽  
Vol 32 ◽  
pp. 205-210
Author(s):  
Sigeaki Nomura ◽  
Kazuo Nishihagi ◽  
Kazuo Tauiguchi
Keyword(s):  
High Purity ◽  
Analytical Methods ◽  
High Performance ◽  
Fluorescence Analysis ◽  
Silicon Wafers ◽  
Small Concentration ◽  
Total Reflection ◽  
X Ray ◽  
Impurity Analysis ◽  
Icp Ms

High purity of silicon wafers is demanded by the high performance and highly integrated IC and LSI semiconductors. Impurities on, or in, the silicon wafer have a big influence on the characteristics of the semiconductor as a final product. Usually, these impurities are introduced by water during washing, by bad handling, or by reagents and processes.Typical influences of these impurities are shown in Table 1. These elements are present at too small concentration to he detected by ordinary analytical methods (except for oxygen). Usually, XPS , AES, NAA, SIMS, ICPAES, ICP-MS and AAS are used for trace analysis.

Determination of the implantation-dose in silicon wafers by x-ray fluorescence analysis

1990 ◽  
Vol 62 (15) ◽  
pp. 1674-1676 ◽  
Author(s):  
Reinhold. Klockenkaemper ◽  
Maria. Becker ◽  
Henning. Bubert ◽  
Peter. Burba ◽  
Leopold. Palmetshofer
Keyword(s):  
Fluorescence Analysis ◽  
Implantation Dose ◽  
Silicon Wafers ◽  
X Ray
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