Determination of the implantation-dose in silicon wafers by x-ray fluorescence analysis

1990 ◽  
Vol 62 (15) ◽  
pp. 1674-1676 ◽  
Author(s):  
Reinhold. Klockenkaemper ◽  
Maria. Becker ◽  
Henning. Bubert ◽  
Peter. Burba ◽  
Leopold. Palmetshofer
Keyword(s):  
Fluorescence Analysis ◽  
Implantation Dose ◽  
Silicon Wafers ◽  
X Ray

Sorption of Se (IV) from aqueous solutions with subsequent determination by X-ray fluorescence analysis

2020 ◽  
Vol 86 (10) ◽  
pp. 5-9
Author(s):  
D. G. Filatova ◽  
A. A. Arkhipenko ◽  
M. A. Statkus ◽  
V. V. Es’kina ◽  
V. B. Baranovskaya ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Fluorescence Analysis ◽  
Standard Samples ◽  
Phase Contact Time ◽  
Sorbent Phase ◽  
X Ray ◽  
Fundamental Parameters ◽  
Inductively Coupled ◽  
Subsequent Determination

An approach to sorptive separation of Se (IV) from solutions on a novel S,N-containing sorbent with subsequent determination of the analyte in the sorbent phase by micro-x-ray fluorescence method is presented. The sorbent copolymethylenesulfide-N-alkyl-methylenamine (CMA) was synthesized using «snake in the cage» procedure and proven to be stable in acid solutions. Conditions for quantitative extraction of Se (IV) were determined: sorption in 5 M HCl or 0.05 M HNO3 solutions when heated to 60°C, phase contact time being 1 h. The residual selenium content in the solution was determined by inductively coupled plasma mass spectrometry (ICP-MS) using 82Se isotope. The absence of selenium losses is proved and the mechanism of sorption interaction under specified conditions is proposed. The method of micro-x-ray fluorescence analysis (micro-RFA) with mapping revealed a uniform distribution of selenium on the sorbent surface. The possibility of determining selenium in the sorbent phase by micro-RFA is shown. When comparing the obtained results with the results of calculations by the method of fundamental parameters, it is shown the necessity of using standard samples of sorbates to obtain correct results of RFA determination of selenium in the sorbent phase.

Determination of the composition of binary chalcogenide glasses by X-ray fluorescence analysis

2010 ◽  
Vol 44 (1) ◽  
pp. 24-27 ◽  
Author(s):  
G. A. Bordovsky ◽  
A. V. Marchenko ◽  
P. P. Seregin ◽  
N. N. Smirnova ◽  
E. I. Terukov
Keyword(s):  
Chalcogenide Glasses ◽  
Fluorescence Analysis ◽  
X Ray

Applications of x-ray Fluorescence Analysis to the Thin Layer on Silicon Wafers

2008 ◽  
pp. 615-615-13
Author(s):  
T Shiraiwa ◽  
T Ochiai ◽  
M Sano ◽  
Y Tada ◽  
T Arai
Keyword(s):  
Thin Layer ◽  
Fluorescence Analysis ◽  
Silicon Wafers ◽  
X Ray

Measurement Of Relative X-Ray Intensity Ratios for Elements With Z=14 to 92 Using EDXRF Spectrometer

1993 ◽  
Vol 37 ◽  
pp. 697-709 ◽  
Author(s):  
Krassimir N. Stoev ◽  
Joseph F. Dlouhy
Keyword(s):  
Fluorescence Analysis ◽  
Radiative Transition ◽  
Published Data ◽  
Emission Rates ◽  
Experimental Physics ◽  
X Ray ◽  
Overlapped Peaks ◽  
Intensity Ratios ◽  
Atomic Structure Calculations

Nowadays x-ray fluorescence analysis is one of the major techniques for determination of trace elements. Vacuum operated Si (Li) .energy-dispersive x-ray spectrometers can analyze simultaneously up to 50 elements from Na (Z=11) to U (Z = 92) . Proper interpretation of the accumulated spectra requires correct solution of x-ray line overlap problems. In many cases knowledge of x-ray intensity ratios can make the procedure for resolving the overlapped peaks more reliable and reproducible. Measurements of radiative transition rates can also provide fundamental tests of theoretical atomic structure calculations. There are many other useful applications of x-ray emission rates in theoretical and experimental physics. On the other hand, there are differences in the published data, which suggests that x-ray intensity ratios are still not known with the necessary accuracy, and new measurements are useful and necessary.

Sign in / Sign up

Export Citation Format

Share Document