Comparison of Impurity Profiles Generated by Spreading Resistance Probe and Secondary Ion Mass Spectrometry

2008 ◽  
pp. 521-521-14 ◽  
Author(s):  
GG Sweeney ◽  
TR Alvarez
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Spreading Resistance ◽  
Ion Mass Spectrometry ◽  
Impurity Profiles ◽  
Secondary Ion

Impurity Profiles in InP from Ion Implantation at Elevated Temperatures

1991 ◽  
Vol 240 ◽  
Author(s):  
P. Kringhoj ◽  
B. G. Svensson
Keyword(s):  
Mass Spectrometry ◽  
Ion Implantation ◽  
Elevated Temperatures ◽  
Secondary Ion Mass Spectrometry ◽  
Implantation Damage ◽  
Ion Mass Spectrometry ◽  
Chemical Profiles ◽  
Impurity Profiles ◽  
Secondary Ion

ABSTRACTThe chemical profiles of Zn, Ge, and Se implanted into InP at elevated temperatures have been measured with secondary ion mass spectrometry and correlated to the implantation damage as deduced from RBS/channeling measurements. An asymmetric broadening of the chemical profiles towards the bulk was found for implantation temperatures above 150°C. This effect is concluded to be due to impurity channeling during implantation.

Investigation of the Dopant Distribution in thin Epitaxial Silicon Layers by Means of Spreading Resistance Probe and Secondary Ion Mass Spectrometry

1997 ◽  
Vol 500 ◽  
Author(s):  
Ilya Karpov ◽  
Catherine Hartford ◽  
Greg Moran ◽  
Subramania Krishnakumar ◽  
Ron Choma ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Chemical Vapor ◽  
Doping Profile ◽  
Epitaxial Silicon ◽  
Spreading Resistance ◽  
Boron Doped ◽  
Ion Mass Spectrometry ◽  
Chemical Profiles ◽  
Secondary Ion

ABSTRACTIn this paper, we examine the dopant distributions in 1.8 to 4 micron-thick boron- and phosphorus-doped epitaxial silicon layers. These layers were grown by chemical vapor deposition (CVD) on arsenic-, antimony-, or boron-doped (100)- and (111)-oriented substrates. We performed doping profile studies by means of local resistivity measurements using a spreading resistance probe (SRP). Chemical profiles of the dopants were also obtained using secondary ion mass spectrometry (SIMS).

Comparison of Boron Profiles by the Spreading Resistance Profile and the Secondary Ion Mass Spectrometry Techniques

1990 ◽  
Vol 137 (6) ◽  
pp. 1877-1883 ◽  
Author(s):  
R. A. Clapper ◽  
D. G. Schimmel ◽  
J. C. C. Tsai ◽  
F. S. Jabara ◽  
F. A. Stevie ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Spreading Resistance ◽  
Resistance Profile ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

Applications of Time-OF-Flight Secondary Ion Mass Spectrometry (TOF-SIMS)

1990 ◽  
Vol 48 (2) ◽  
pp. 308-309
Author(s):  
Bruno Schueler ◽  
Robert W. Odom
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Structural Information ◽  
Time Of Flight ◽  
Biological Tissues ◽  
Polymer Surfaces ◽  
Tof Sims ◽  
Secondary Ions ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

Time-of-flight secondary ion mass spectrometry (TOF-SIMS) provides unique capabilities for elemental and molecular compositional analysis of a wide variety of surfaces. This relatively new technique is finding increasing applications in analyses concerned with determining the chemical composition of various polymer surfaces, identifying the composition of organic and inorganic residues on surfaces and the localization of molecular or structurally significant secondary ions signals from biological tissues. TOF-SIMS analyses are typically performed under low primary ion dose (static SIMS) conditions and hence the secondary ions formed often contain significant structural information.This paper will present an overview of current TOF-SIMS instrumentation with particular emphasis on the stigmatic imaging ion microscope developed in the authors’ laboratory. This discussion will be followed by a presentation of several useful applications of the technique for the characterization of polymer surfaces and biological tissues specimens. Particular attention in these applications will focus on how the analytical problem impacts the performance requirements of the mass spectrometer and vice-versa.

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