Measurement of Shallow Arsenic Impurity Profiles in Semiconductor Silicon Using Time‐of‐Flight Secondary Ion Mass Spectrometry and Total Reflection X‐Ray Fluorescence Spectrometry
1997 ◽
Vol 144
(11)
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pp. 3979-3983
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2004 ◽
Vol 41
(11)
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pp. 1027-1032
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2011 ◽
Vol 29
(4)
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pp. 04D113
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1994 ◽
Vol 12
(3)
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pp. 671-676
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2004 ◽
Vol 59
(8)
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pp. 1243-1249
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1994 ◽
Vol 12
(1)
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pp. 147
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2008 ◽
Vol 8
(1)
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pp. 358-365
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1998 ◽
Vol 16
(6)
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pp. 3048
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