Profiling of ultra-shallow complementary metal–oxide semiconductor junctions using spreading resistance: A comparison to secondary ion mass spectrometry

1992 ◽  
Vol 10 (1) ◽  
pp. 533 ◽  
Author(s):  
C. M. Osburn
Keyword(s):  
Mass Spectrometry ◽  
Metal Oxide ◽  
Secondary Ion Mass Spectrometry ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Spreading Resistance ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

Investigation of the Dopant Distribution in thin Epitaxial Silicon Layers by Means of Spreading Resistance Probe and Secondary Ion Mass Spectrometry

1997 ◽  
Vol 500 ◽  
Author(s):  
Ilya Karpov ◽  
Catherine Hartford ◽  
Greg Moran ◽  
Subramania Krishnakumar ◽  
Ron Choma ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Chemical Vapor ◽  
Doping Profile ◽  
Epitaxial Silicon ◽  
Spreading Resistance ◽  
Boron Doped ◽  
Ion Mass Spectrometry ◽  
Chemical Profiles ◽  
Secondary Ion

ABSTRACTIn this paper, we examine the dopant distributions in 1.8 to 4 micron-thick boron- and phosphorus-doped epitaxial silicon layers. These layers were grown by chemical vapor deposition (CVD) on arsenic-, antimony-, or boron-doped (100)- and (111)-oriented substrates. We performed doping profile studies by means of local resistivity measurements using a spreading resistance probe (SRP). Chemical profiles of the dopants were also obtained using secondary ion mass spectrometry (SIMS).

Multielement ultratrace analysis of molybdenum with high performance secondary ion mass spectrometry

1988 ◽  
Vol 3 (4) ◽  
pp. 694-704 ◽  
Author(s):  
A. Virag ◽  
G. Friedbacher ◽  
M. Grasserbauer ◽  
H. M. Ortner ◽  
P. Wilhartitz
Keyword(s):  
Mass Spectrometry ◽  
Electron Beam ◽  
Electron Beam Melting ◽  
Large Scale ◽  
Secondary Ion Mass Spectrometry ◽  
Refractory Metals ◽  
Oxide Semiconductor ◽  
Impurity Level ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

Electron beam melting has been used to obtain ultrapure refractory metals that are gaining importance in metal oxide semiconductor-very large scale integration (MOS-VLSI) processing technology, fusion reactor technology, or as superconducting materials. Although the technology of electron beam melting is well established in the field of production of very clean refractory metals, little is known about the limitations of the method because the impurity level of the final products is frequently below the detection power of common methods for trace analysis. Characterization of these materials can be accomplished primarily by in situ methods like neutron activation analysis and mass spectrometric methods [glow discharge mass spectrometry (GDMS), secondary ion mass spectrometry (SIMS)]. A suitable method for quantitative multielement ultratrace bulk analysis of molybdenum with SIMS has been developed. Detection limits of the analyzed elements from 10−7g/gdown to 10−12g/g have been found. Additional information about the distribution of the trace elements has been accumulated.

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