Non-Contact Measurements of the Minority Carrier Recombination Lifetime at the Silicon Surface

2009 ◽  
pp. 147-147-9 ◽  
Author(s):  
E Kamieniecki
Keyword(s):  
Silicon Surface ◽  
Minority Carrier ◽  
Recombination Lifetime ◽  
Carrier Recombination ◽  
Contact Measurements

Correlation of Fe-Rich Defect Centre and Minority Carrier Lifetime in p-Type Multicrystalline Silicon

2013 ◽  
Vol 440 ◽  
pp. 82-87 ◽  
Author(s):  
Mohammad Jahangir Alam ◽  
Mohammad Ziaur Rahman
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Multicrystalline Silicon ◽  
Recombination Lifetime ◽  
Spatially Resolved ◽  
Carrier Recombination ◽  
Negative Role ◽  
P Type ◽  
The Impact

A comparative study has been made to analyze the impact of interstitial iron in minority carrier lifetime of multicrystalline silicon (mc-Si). It is shown that iron plays a negative role and is considered very detrimental for minority carrier recombination lifetime. The analytical results of this study are aligned with the spatially resolved imaging analysis of iron rich mc-Si.

Detection of Nickel in Silicon by Recombination Lifetime Measurements

2007 ◽  
Vol 131-133 ◽  
pp. 183-188 ◽  
Author(s):  
Hele Savin ◽  
Marko Yli-Koski ◽  
Antti Haarahiltunen ◽  
H. Talvitie ◽  
Juha Sinkkonen
Keyword(s):  
Minority Carrier ◽  
Concentration Level ◽  
Light Illumination ◽  
Air Cooling ◽  
Recombination Activity ◽  
Lifetime Measurements ◽  
Recombination Lifetime ◽  
Carrier Recombination ◽  
The Impact ◽  
Wafer Surfaces

The impact of nickel on minority carrier recombination lifetime has been studied in ptype CZ silicon using SPV and μ-PCD techniques. The results show that small oxide precipitates can be used to improve drastically the detection limit of nickel. This is explained by the decoration of oxide precipitates by nickel, which results in the enhanced recombination activity. In the absence of oxide precipitates or other related bulk microdefects nickel precipitates preferably to wafer surfaces, which does not have such a high impact on the measured recombination lifetime, at least on a low concentration level. Low temperature anneal at 180°C or light illumination of the wafers after nickel in-diffusion did not reveal any further change in lifetime in any of the wafers, which may indicate that nickel precipitates efficiently during air-cooling from high temperature.

Ultraviolet (UV) Irradiation Effect on Minority-Carrier Recombination Lifetime in Silicon Wafers with Oxide and Nitride Films

1993 ◽  
Vol 318 ◽  
Author(s):  
L. Zhong ◽  
F. Shimura
Keyword(s):  
Uv Irradiation ◽  
Minority Carrier ◽  
Correlation Energy ◽  
Surface Recombination ◽  
Chemical Vapor ◽  
Charge Trapping ◽  
Dielectric Films ◽  
Irradiation Effect ◽  
Recombination Lifetime ◽  
Carrier Recombination

ABSTRACTA new method based upon photoconductance measurement of the minority-carrier recombination lifetime is developed to investigate defects both in dielectric films and on the interface. In this method, surface recombination process in silicon substrate is used as a probe to detect the interface traps generated by ultraviolet (UV) irradiation as well as the defects in a film whose electronic state can be excited by UV irradiation. A variety of films, including native, chemical vapor deposited (CVD) and thermal oxide as well as CVD nitride, have been studied. In CVD nitride, for example, evidence is provided that K-centers, the main charge trapping defects, have a negative correlation energy (negative-U).

Noncontact Characterization for Ultraviolet Light Irradiation Effect on Si-SiO2 Interface

1992 ◽  
Vol 262 ◽  
Author(s):  
K. Katayama ◽  
F. Shimura
Keyword(s):  
Minority Carrier ◽  
Surface Recombination ◽  
Native Oxide ◽  
Dominant Factor ◽  
Irradiation Effect ◽  
Recombination Lifetime ◽  
Carrier Recombination ◽  
Thermal Oxide ◽  
Ultraviolet Light Irradiation ◽  
Recombination Centers

ABSTRACTThe effect of ultraviolet (UV) irradiation on the minority-carrier surface recombination lifetime (τs) in silicon wafers with native or thermal oxide was studied with a noncontact laser/microwave photoconductance (LM-PC) technique. The τs greatly increases in samples with native oxide after the irradiation. The dominant factor for the τs change can be negative charges created by photo-injected electrons in the surface area. On the other hand, the irradiation decreases τs in silicon with thermal oxide. The τs decrease is due to the generation of carrier recombination centers with an energy level around 0.2eV at the Si-SiO2 interface.

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