Minority Carrier Recombination Properties of Crystalline Defect on Silicon Surface Induced by Plasma Enhanced Chemical Vapor Deposition

2016 ◽  
Vol 5 (9) ◽  
pp. Q253-Q256 ◽  
Author(s):  
Tomihisa Tachibana ◽  
Daisuke Takai ◽  
Takuto Kojima ◽  
Takefumi Kamioka ◽  
Atsushi Ogura ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Surface ◽  
Minority Carrier ◽  
Chemical Vapor ◽  
Carrier Recombination ◽  
Crystalline Defect

scholarly journals Исследование возможности изготовления напряженных сверхрешеток InAs/GaSb методом газофазной эпитаксии из металлоорганических соединений

2019 ◽  
Vol 53 (2) ◽  
pp. 273
Author(s):  
Р.В. Левин ◽  
В.Н. Неведомский ◽  
Н.Л. Баженов ◽  
Г.Г. Зегря ◽  
Б.В. Пушный ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Recombination Energy ◽  
Long Wavelength ◽  
Carrier Recombination ◽  
First Results ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractThe first results showing the possibility of manufacturing InAs/GaSb superlattices by the metal-organic chemical vapor deposition (MOCVD) method are presented. The possibility of manufacturing heterostructures with an InAs/GaSb strained superlattice with layer thicknesses of 2–4 nm is experimentally demonstrated. The 77-K electroluminescence spectra of the structures show a long-wavelength peak at around 5 . 0 μm (0 . 25 eV). This peak is probably associated with the strained superlattice because solid solutions that could form on the basis of composite compounds do not provide this carrier-recombination energy.

Nucleation and growth of oriented diamond on Si(100) by bias-assisted chemical vapor deposition

1997 ◽  
Vol 12 (5) ◽  
pp. 1351-1355 ◽  
Author(s):  
Mikka Nishitani-Gamo ◽  
Toshihiro Ando ◽  
Kazuo Yamamoto ◽  
Paul A. Dennig ◽  
Yoichiro Sato
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Surface ◽  
Chemical Vapor ◽  
Nucleation And Growth ◽  
Nucleation Density ◽  
Subsequent Growth ◽  
Oriented Growth ◽  
Oriented Films ◽  
Morphology Changes

In order to clarify the effect of bias treatments on the highly oriented growth of diamond, we investigated the relation between the silicon surface morphology changes after applying a bias voltage, and the orientation of the diamond crystallites after growth. We report two major findings. First, a textured structure on the Si surface after the bias pretreatment was found to be a necessary but insufficient indicator for the subsequent growth of highly oriented diamond. Second, although bias pretreatments effectively enhance nucleation, we did not find a clear relationship between the nucleation density and the percentage of oriented crystallites. The highest nucleation densities resulted in randomly oriented films. We conclude that bias pretreatments affect the nucleation enhancement and the diamond orientation through different mechanisms.

The Role of Nitrogen-Induced Localization and Defects in InGaAsN (? 2% N): Comparison of InGaAsN Grown by Molecular Beam Epitaxy and Metal-Organic Chemical Vapor Deposition

2001 ◽  
Vol 692 ◽  
Author(s):  
Steven R Kurtz ◽  
A. A. Allermana ◽  
J. F. Klem ◽  
R. M. Sieg ◽  
C. H. Seager ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Minority Carrier ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Carrier Diffusion ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractNitrogen vibrational mode spectra, Hall mobilities, and minority carrier diffusion lengths are examined for InGaAsN (≈ 1.1 eV bandgap) grown by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). Independent of growth technique, annealing promotes the formation of In-N bonding, and lateral carrier transport is limited by large scale (Ęmean free path ) material inhomogeneities. Comparing solar cell quantum efficiencies for devices grown by MBE and MOCVD, we find significant electron diffusion in the MBE material (reversed from the hole diffusion occurring in MOCVD material), and minority carrier diffusion in InGaAsN cannot be explained by a “universal”, nitrogen-related defect.

scholarly journals Excellent crystalline silicon surface passivation by amorphous silicon irrespective of the technique used for chemical vapor deposition

2011 ◽  
Vol 98 (15) ◽  
pp. 153514 ◽  
Author(s):  
Jan-Willem A. Schüttauf ◽  
Karine H. M. van der Werf ◽  
Inge M. Kielen ◽  
Wilfried G. J. H. M. van Sark ◽  
Jatindra K. Rath ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Silicon Surface ◽  
Surface Passivation ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Silicon Surface Passivation

Minority Carrier Lifetime Measurement in Germanium on Silicon Heterostructures for Optoelectronic Applications

2005 ◽  
Vol 891 ◽  
Author(s):  
Josephine J. Sheng ◽  
Malcolm S. Carroll
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Inductively Coupled Plasma ◽  
Near Infrared ◽  
Minority Carrier ◽  
Surface Recombination ◽  
Chemical Vapor ◽  
Surface Recombination Velocity ◽  
Cmos Process ◽  
Inductively Coupled

ABSTRACTDemand for low cost and high density near infrared (NIR) detection has motivated the development and use of germanium on silicon (Ge/Si) heterostructures to extend the optoelectronic application of Si technology. Ge/Si structures are currently being considered for NIR p/n detectors that can be integrated with Si CMOS [1]. Various research demonstrations of integrated Ge/Si diodes with CMOS have been made including using sputtered poly-Ge to form Ge/Si photodiodes after the CMOS transistors were complete. Poly-crystalline germanium (poly-Ge) may be formed by various methods including the use of plasma enhanced chemical vapor deposition. In this work, the formation of poly-Ge/Si heterostructures by inductively coupled plasma enhanced chemical vapor deposition (ICP-CVD) is examined as an alternative method to integrate poly-Ge into a CMOS process flow. In this work, 25 nm poly-Ge on Si heterostructures are formed by either recrystallization of ICP-CVD hydrogenated amorphous germanium (α-Ge:H) or direct deposition of ICP-CVD poly-Ge. A rapid measure of the suitability for detectors of the different poly-Ge films is the minority carrier recombination lifetime, which can affect dark current, quantum efficiency and overall detector detectivity. Recombination lifetimes were measured, therefore, in α-Ge:H that was recrystallized using rapid thermal annealing between 400 – 1050 °C in nitrogen ambient. Lifetimes were measured using a non-contact inductively coupled photo-conductance setup and an effective surface recombination velocity is subsequently extracted for each Ge/Si heterostructure that describes the integrated recombination in the Ge layer and at the Ge/Si interface, which separates the Ge contribution from recombination in the bulk silicon and at the silicon surface. The effective recombination velocities for the 25 nm Ge layers are found to be ∼103−104 cm/s.

Long minority carrier lifetimes in 6H SiC grown by chemical vapor deposition

1995 ◽  
Vol 66 (2) ◽  
pp. 189-191 ◽  
Author(s):  
O. Kordina ◽  
J. P. Bergman ◽  
A. Henry ◽  
E. Janzén
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Minority Carrier ◽  
Chemical Vapor ◽  
Carrier Lifetimes ◽  
Minority Carrier Lifetimes
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