Noncontact Characterization for Ultraviolet Light Irradiation Effect on Si-SiO2 Interface

1992 ◽  
Vol 262 ◽  
Author(s):  
K. Katayama ◽  
F. Shimura
Keyword(s):  
Minority Carrier ◽  
Surface Recombination ◽  
Native Oxide ◽  
Dominant Factor ◽  
Irradiation Effect ◽  
Recombination Lifetime ◽  
Carrier Recombination ◽  
Thermal Oxide ◽  
Ultraviolet Light Irradiation ◽  
Recombination Centers

ABSTRACTThe effect of ultraviolet (UV) irradiation on the minority-carrier surface recombination lifetime (τs) in silicon wafers with native or thermal oxide was studied with a noncontact laser/microwave photoconductance (LM-PC) technique. The τs greatly increases in samples with native oxide after the irradiation. The dominant factor for the τs change can be negative charges created by photo-injected electrons in the surface area. On the other hand, the irradiation decreases τs in silicon with thermal oxide. The τs decrease is due to the generation of carrier recombination centers with an energy level around 0.2eV at the Si-SiO2 interface.

Ultraviolet (UV) Irradiation Effect on Minority-Carrier Recombination Lifetime in Silicon Wafers with Oxide and Nitride Films

1993 ◽  
Vol 318 ◽  
Author(s):  
L. Zhong ◽  
F. Shimura
Keyword(s):  
Uv Irradiation ◽  
Minority Carrier ◽  
Correlation Energy ◽  
Surface Recombination ◽  
Chemical Vapor ◽  
Charge Trapping ◽  
Dielectric Films ◽  
Irradiation Effect ◽  
Recombination Lifetime ◽  
Carrier Recombination

ABSTRACTA new method based upon photoconductance measurement of the minority-carrier recombination lifetime is developed to investigate defects both in dielectric films and on the interface. In this method, surface recombination process in silicon substrate is used as a probe to detect the interface traps generated by ultraviolet (UV) irradiation as well as the defects in a film whose electronic state can be excited by UV irradiation. A variety of films, including native, chemical vapor deposited (CVD) and thermal oxide as well as CVD nitride, have been studied. In CVD nitride, for example, evidence is provided that K-centers, the main charge trapping defects, have a negative correlation energy (negative-U).

Correlation of Fe-Rich Defect Centre and Minority Carrier Lifetime in p-Type Multicrystalline Silicon

2013 ◽  
Vol 440 ◽  
pp. 82-87 ◽  
Author(s):  
Mohammad Jahangir Alam ◽  
Mohammad Ziaur Rahman
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Multicrystalline Silicon ◽  
Recombination Lifetime ◽  
Spatially Resolved ◽  
Carrier Recombination ◽  
Negative Role ◽  
P Type ◽  
The Impact

A comparative study has been made to analyze the impact of interstitial iron in minority carrier lifetime of multicrystalline silicon (mc-Si). It is shown that iron plays a negative role and is considered very detrimental for minority carrier recombination lifetime. The analytical results of this study are aligned with the spatially resolved imaging analysis of iron rich mc-Si.

scholarly journals CONSIDERATION OF SURFACE RECOMBINATION WHEN MEASURING THE RECOMBINATION LIFETIME FROM THE PHOTOCONDUCTIVITY DECAY IN LARGE-THICKNESS SAMPLES

2020 ◽  
Author(s):  
Svetlana Kobeleva ◽  
Ivan Schemerov ◽  
Artem Sharapov ◽  
Sergey Yurchuk
Keyword(s):  
Diffusion Length ◽  
Decay Curve ◽  
Surface Recombination ◽  
Life Time ◽  
Free Carrier ◽  
Silicon Sample ◽  
Recombination Lifetime ◽  
Carrier Recombination ◽  
Photoconductivity Decay ◽  
Effective Life

Surface recombination strongly influence on the photoconductivity decay curve. In this work it was shown that usually defined using this curve the effective life time don’t achieve maxima value if silicon sample thickness exceeds six diffusion length. In this case well known formulas for calculation of free carrier recombination lifetime need to be adjusted.

Detection of Nickel in Silicon by Recombination Lifetime Measurements

2007 ◽  
Vol 131-133 ◽  
pp. 183-188 ◽  
Author(s):  
Hele Savin ◽  
Marko Yli-Koski ◽  
Antti Haarahiltunen ◽  
H. Talvitie ◽  
Juha Sinkkonen
Keyword(s):  
Minority Carrier ◽  
Concentration Level ◽  
Light Illumination ◽  
Air Cooling ◽  
Recombination Activity ◽  
Lifetime Measurements ◽  
Recombination Lifetime ◽  
Carrier Recombination ◽  
The Impact ◽  
Wafer Surfaces

The impact of nickel on minority carrier recombination lifetime has been studied in ptype CZ silicon using SPV and μ-PCD techniques. The results show that small oxide precipitates can be used to improve drastically the detection limit of nickel. This is explained by the decoration of oxide precipitates by nickel, which results in the enhanced recombination activity. In the absence of oxide precipitates or other related bulk microdefects nickel precipitates preferably to wafer surfaces, which does not have such a high impact on the measured recombination lifetime, at least on a low concentration level. Low temperature anneal at 180°C or light illumination of the wafers after nickel in-diffusion did not reveal any further change in lifetime in any of the wafers, which may indicate that nickel precipitates efficiently during air-cooling from high temperature.

A Quantitative Model of the Electrical Activity of Metal Silicide Precipitates in Silicon Based on the Schottky Effect

2001 ◽  
Vol 669 ◽  
Author(s):  
Teh Y. Tan ◽  
Pavel S. Plekhanov
Keyword(s):  
Electrical Activity ◽  
Minority Carrier ◽  
Thermionic Emission ◽  
Surface Recombination ◽  
Quantitative Model ◽  
Schottky Junction ◽  
Metal Silicide ◽  
Schottky Effect ◽  
Carrier Recombination ◽  
Silicon Based

ABSTRACTA quantitative model of the electrical activity of metallic precipitates in Si is presented. An emphasis is placed on the properties of the Schottky junction at the precipitate-Si interface, as well as the carrier diffusion and drift in the Si space charge region. Carrier recombination rate is found to be primarily determined by the thermionic emission charge transport process across the Schottky junction rather than the surface recombination process. It is shown that the precipitates can have a very large minority carrier capture cross-section.

Influence of Epilayer Thickness and Structural Defects on the Minority Carrier Lifetime in 4H-SiC

2013 ◽  
Vol 740-742 ◽  
pp. 633-636 ◽  
Author(s):  
Birgit Kallinger ◽  
Patrick Berwian ◽  
Jochen Friedrich ◽  
Mathias Rommel ◽  
Maral Azizi ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Deep Level ◽  
Surface Recombination ◽  
Minority Carrier Lifetime ◽  
Structural Defects ◽  
Effective Lifetime ◽  
Recombination Lifetime ◽  
Photoconductivity Decay ◽  
Transient Spectroscopy

4H-SiC homoepitaxial layers with different thicknesses from 12.5 µm up to 50 µm were investigated by microwave-detected photoconductivity decay (µ-PCD), deep level transient spectroscopy (DLTS) and defect selective etching (DSE) to shed light on the influence of the epilayer thickness and structural defects on the effective minority carrier lifetime. It is shown that the effective lifetime, resulting directly from the µ-PCD measurement, is significantly influenced by the surface recombination lifetime. Therefore, an adequate correction of the measured data is necessary to determine the bulk lifetime. The bulk lifetime of these epilayers is in the order of several microseconds. Furthermore, areas with high dislocation density are correlated to areas with locally reduced effective lifetime.

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